Backsideilluminated Lateral Pin Photodiode For Cmos Image Sensor On Sos Substrate

• doi: 10.1109/TED.2005.848106
• title: Backside-illuminated lateral PIN photodiode for CMOS image sensor on SOS substrate
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1706
• access_type: LOCKED
• content_type: Journals
• abstract: In this paper, we propose a method to design charge-sensing elements for CMOS image sensor pixels on a silicon-on-sapphire (SOS) substrate. To address the low quantum efficiency problem due to very thin active film used, a backside illuminated lateral PIN photodiode on an SOS substrate is proposed and developed. It has the advantages of higher photo response with a PIN structure and improved optical transmission with a backside illumination through a transparent sapphire substrate. An active pixel sensor (APS) based on the PIN and backside illumination has been implemented in a commercially available SOS CMOS process. Acceptable sensitivity in optical conversion from the APS can be achieved, even with the ultrathin silicon film. The APS is demonstrated to function at 1.2 V, giving a dynamic range of 51 dB.
• article_number: 1433103
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1433103
• html_url: https://ieeexplore.ieee.org/document/1433103/
• abstract_url: https://ieeexplore.ieee.org/document/1433103/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 30901
• publication_year: 2005
• publication_date: June 2005
• start_page: 1110
• end_page: 1115
• citing_paper_count: 17
• citing_patent_count: 1
• download_count: 830
• insert_date: 20050523
• index_terms:
  • ieee_terms:
    • Silicon on insulator technology
    • p-i-n photodiodes
  • author_terms:
    • Active pixel sensor (APS)
    • backside illuminated
    • lateral PIN photodiode
    • quantum efficiency
    • silicon-on-sapphire (SOS)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • PIN Photodiode
    • Lateral Pin
    • Thin Films
    • Alumina
    • Dynamic Range
    • Quantum Efficiency
    • Active Sensors
    • Ultrathin Films
    • Sapphire Substrate
    • Silicon Film
    • Optical Conversion
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Photocurrent
    • Transmission Coefficient
    • Factors For Transmission
    • Metal Layer
    • Optical Signal
    • Dielectric Layer
    • Insulation Layer
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Fill Factor
    • Dark Current
    • PIN Diodes
    • Dark Noise
    • Peregrine
    • Minority Carrier
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • Reverse Bias Voltage
    • Uniform Thickness
    • Index Of Layer
    • Dark Component
• authors:
  • Author Name: Chen Xu
    Affiliation: Imaging Group, Micron Technology, Inc., Boise, ID, USA
    Author URL: https://ieeexplore.ieee.org/author/37087148288
    ID: 37087148288
    Order: 1
    Author Affiliations:
    • Imaging Group, Micron Technology, Inc., Boise, ID, USA
  • Author Name: Chao Shen
    Affiliation: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37087569911
    ID: 37087569911
    Order: 2
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
  • Author Name: Wen Wu
    Affiliation: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37085965605
    ID: 37085965605
    Order: 3
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
  • Author Name: M. Chan
    Affiliation: Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37275216900
    ID: 37275216900
    Order: 4
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China

Image Sensor

• sensor_type: CMOS
• resolution: VGA
• dynamic_range: 51 dB
• pixel_size: 20 µm x 20 µm
• dark_current: 1500 e- (RMS)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: 1500 e- (RMS)

Applications & Benefits

• cell_imaging: Used for imaging applications in portable devices and military/space applications.
• benefits: Enhanced sensitivity through backside illumination, no interference from metal interconnect on front surface, improved fill-factor.

Supporting Organizations

• supported_by: Research Grant Council of Hong Kong under Grant HKUST6110/03E.

Manuscript Details

• publication_date: June 2005

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_136a6cc8-2fa0-411e-9c55-d9df9b23b9e6-backsideilluminated_lateral_pin_photodiode_for_cmos_image_sensor_on_sos_substrate.json