Backilluminated Doubleavalancheregion Singlephoton Avalanche Diode

• doi: 10.1109/JSTQE.2023.3322354
• title: Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 1701
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: The key features of a single-photon avalanche diode (SPAD) are its ability to detect a single photon and provide a digital signal output. The avalanche multiplication process, which generates a detectable electrical signal that can be amplified up to a high voltage without the need for additional circuits, allows SPADs to detect individual photons. Specifically, a SPAD fabricated in CMOS technology can detect near-infrared (NIR) signals, which is a crucial requirement in many applications such as light detection and ranging (LiDAR), time-of-flight (ToF) imaging, and NIR optical tomography. These applications require specific performance characteristics, for example, high photon detection probability (PDP). In this article, we propose an optimized SPAD developed based on 40 nm backside illuminated (BSI) CMOS image sensor (CIS) technology. The SPAD is designed and fabricated using a heavily doped p-type (P+) and a retrograde doped deep n-well (DNW) junction. The doping-optimized guard-ring (GR) for the expansion of the avalanche multiplication region maximizes PDP, while maintaining its original capability, premature edge breakdown (PEB) prevention at the edge of the junction. We demonstrate the effectiveness of GR optimization by comparing the electrical and optical experimental results with the conventional SPAD. The proposed double-avalanche-region (DAR) SPAD achieves a peak PDP of about 89% at the wavelength of 700 nm and a PDP of 45% at 940 nm, which are the highest values among SPADs reported so far at the excess bias voltage of 2.5 V. The dark count rate (DCR) is 27 cps/μm2 and the full width at half-maximum (FWHM) of the timing jitter is 89 ps at the same operating condition.
• article_number: 10286976
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10286976
• html_url: https://ieeexplore.ieee.org/document/10286976/
• abstract_url: https://ieeexplore.ieee.org/document/10286976/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 10363134
• publication_year: 2024
• publication_date: Jan.-Feb. 2024
• start_page: 1
• end_page: 9
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 1544
• insert_date: 20231017
• index_terms:
  • ieee_terms:
    • Single-photon avalanche diodes
    • Photonics
    • Doping
    • Optimization
    • P-n junctions
    • Optical sensors
    • Electric fields
    • Avalanche photodiodes
    • CMOS image sensors
    • Semiconductor devices
    • Detectors
  • author_terms:
    • Avalanche photodiode (APD)
    • back-illuminated single-photon avalanche diode (SPAD)
    • CMOS image sensor (CIS) technology
    • detector
    • diode
    • electronic-photonic integration
    • geiger-mode avalanche photodiode (G-APD)
    • high-volume manufacturing
    • integrated optoelectronics
    • integration of photonics in standard CMOS technology
    • light detection and ranging (LiDAR)
    • near infrared (NIR)
    • optical sensing
    • optical sensor
    • photodetector
    • photodiode
    • photomultiplier
    • RGB-D sensor
    • semiconductor device
    • sensor
    • silicon
    • wafer-scale
  • dynamic_index_terms:
    • Avalanche Diode
    • Single-photon Avalanche Diode
    • Multiple Regions
    • Light Detection And Ranging
    • Lidar
    • Image Sensor
    • Camera Sensor
    • Optimal Effect
    • Light Detection
    • Digital Output
    • Dark Count
    • Timing Jitter
    • Dark Count Rate
    • Active Area
    • Laser Scanning Microscope
    • Activation Energy
    • Wavelength Range
    • Range Of Wavelengths
    • Charge Carriers
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Optical Power
    • Lens Power
    • Refractive Power
    • Doping Concentration
    • Dead Time
    • P-n Junction
    • Antireflection Coatings
    • Temperature Coefficient
    • Time-correlated Single-photon Counting
    • TCSPC
    • Thermal Power Plants
    • Thermal Generation
    • Thermal Plants
    • Movement Of Carriers
    • Low Doping Concentration
    • High Doping Concentration
• authors:
  • Author Name: Eunsung Park
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37089923696
    ID: 37089923696
    Order: 1
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Doyoon Eom
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37089926565
    ID: 37089926565
    Order: 2
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Myeong-Hun Yu
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/830314480380806
    ID: 830314480380806
    Order: 3
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
  • Author Name: Yun-Mi Moon
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/375162969177969
    ID: 375162969177969
    Order: 4
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
  • Author Name: Dae-Hwan Ahn
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37085828240
    ID: 37085828240
    Order: 5
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
  • Author Name: Jongtae Ahn
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/877094129564293
    ID: 877094129564293
    Order: 6
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
  • Author Name: Do Kyung Hwang
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37088760946
    ID: 37088760946
    Order: 7
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
  • Author Name: Woo-Young Choi
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37281363600
    ID: 37281363600
    Order: 8
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Myung-Jae Lee
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37598674000
    ID: 37598674000
    Order: 9
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly mentioned
• dynamic_range: Not explicitly mentioned
• pixel_size: Not explicitly mentioned
• dark_current: 27 cps/µm² (DCR) at VE=2.5 V for DAR SPAD

Optical Data

• focal_length: Not explicitly mentioned
• aperture: Not explicitly mentioned
• field_of_view: Not explicitly mentioned
• distortion: Not explicitly mentioned

Performance Metrics

• frame_rate: Not explicitly mentioned
• signal_to_noise_ratio: Not explicitly mentioned
• sensitivity: Not explicitly mentioned
• shutter_speed: Not explicitly mentioned
• power_consumption: Not explicitly mentioned
• noise: DCR of 27 cps/µm² for DAR SPAD; dark count rate (DCR) characterized by thermal generation and trapped carriers.

Applications & Benefits

• cell_imaging: Used for light detection and ranging (LiDAR) and time-of-flight (ToF) applications; enhances sensor capabilities for smartphones and autonomous vehicle systems.
• benefits: High Photon Detection Probability (PDP); low timing jitter; suitable for various imaging applications.

Supporting Organizations

• supported_by: Korea Institute of Science and Technology Institution Program and National Research Foundation of Korea.

Manuscript Details

• publication_date: Jan.-Feb. 2024

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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