Avalanche Multiplication Image Sensor Bonded With Crystalline Se Photoconversion Layer Using Sese Bonding Process

• doi: 10.1109/TED.2022.3182637
• title: Avalanche Multiplication Image Sensor Bonded With Crystalline Se Photoconversion Layer Using Se–Se Bonding Process
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1696
• access_type: LOCKED
• content_type: Journals
• abstract: We have developed a bonded CMOS image sensor using a gallium oxide (Ga2O3)/polycrystalline selenium (c-Se)/nickel oxide photodiode and a Se–Se bonding process. These photodiodes can amplify the signal by avalanche amplification when a high electric field is applied, thus realizing a high-sensitivity image sensor. The Se–Se bonding process has many advantages, including the ability to handle high-temperature processing, no sputtering damage to the p-n junction interface, and no need for high-precision alignment. In this study, we have shown that the application of a high-temperature process to crystallize Ga2O3 improves the orientation of the c-Se, which is the photosensitive layer, and reduces the dark current. In addition, the Se–Se bonding process reduces the sputtering damage at the Ga2O3/c-Se interface, improving film quality. By applying the developed bonding process, we successfully realized a high-sensitivity CMOS image sensor with a threefold increase in magnification.
• article_number: 9800193
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9800193
• html_url: https://ieeexplore.ieee.org/document/9800193/
• abstract_url: https://ieeexplore.ieee.org/document/9800193/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 9839401
• publication_year: 2022
• publication_date: Aug. 2022
• start_page: 4325
• end_page: 4330
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 406
• insert_date: 20220617
• index_terms:
  • ieee_terms:
    • Annealing
    • Bonding
    • Image sensors
    • Gallium
    • Dark current
    • Substrates
    • Temperature measurement
  • author_terms:
    • Avalanche multiplication
    • bonded CMOS image sensor
    • gallium oxide (Ga₂O₃)
    • high sensitivity
    • nickel oxide (NiO)
    • photoconversion layer
    • selenium
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Avalanche Multiplication
    • Avalanche Generation
    • High Field
    • Photodiode
    • High Electric Field
    • High-temperature Process
    • Film Quality
    • Dark Current
    • P-n Junction
    • Nickel Oxide
    • High-sensitivity Sensor
    • Junction Interface
    • Electrode
    • Multiple Factors
    • Crystallinity
    • Low Voltage
    • Light Irradiation
    • Light Radiation
    • Quantum Efficiency
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Current-voltage Characteristics
    • Carrier Concentration
    • Charge Carrier Density
    • Sapphire Substrate
    • Indium Tin Oxide
    • Indium-tin-oxide
    • DC Sputtering
    • Vacuum Evaporator
    • Current Reduction
    • High-temperature Annealing
    • Se Concentration
    • Stacking Structure
    • High Frame Rate
• authors:
  • Author Name: Keitada Mineo
    Affiliation: Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086289419
    ID: 37086289419
    Order: 1
    Author Affiliations:
    • Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
  • Author Name: Shigeyuki Imura
    Affiliation: Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085575377
    ID: 37085575377
    Order: 2
    Author Affiliations:
    • Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
  • Author Name: Kazunori Miyakawa
    Affiliation: Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
    Author URL: https://ieeexplore.ieee.org/author/37628357900
    ID: 37628357900
    Order: 3
    Author Affiliations:
    • Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
  • Author Name: Toshiki Arai
    Affiliation: Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
    Author URL: https://ieeexplore.ieee.org/author/38067835200
    ID: 38067835200
    Order: 4
    Author Affiliations:
    • Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
  • Author Name: Satoshi Aihara
    Affiliation: Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
    Author URL: https://ieeexplore.ieee.org/author/37064209500
    ID: 37064209500
    Order: 5
    Author Affiliations:
    • Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
  • Author Name: Mutsumi Sugiyama
    Affiliation: Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Chiba, Noda, Japan
    Author URL: https://ieeexplore.ieee.org/author/37627647900
    ID: 37627647900
    Order: 6
    Author Affiliations:
    • Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Chiba, Noda, Japan
  • Author Name: Masakazu Nanba
    Affiliation: Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan
    Author URL: https://ieeexplore.ieee.org/author/37283665600
    ID: 37283665600
    Order: 7
    Author Affiliations:
    • Science and Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo, Setagaya, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 200x400 pixels
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: 30 nA/cm² (for threefold multiplication)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: High-sensitivity CMOS image sensor with improved characteristics using Se–Se bonding process.
• benefits: Threefold multiplication factor achieved; reduced dark current due to improved orientation of c-Se.

Supporting Organizations

• supported_by: Japan Broadcasting Corporation (NHK), Tokyo University of Science.

Manuscript Details

• publication_date: Aug. 2022

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • fill_factor
  • quantum_efficiency
  • signal_to_noise_ratio
  • power_consumption
  • frame_rate
  • sensitivity
  • shutter_speed
  • optical_data
  • noise

Processed JSON Filename

request_88772826-443f-408c-a616-00a9aac5600f-avalanche_multiplication_image_sensor_bonded_with_crystalline_se_photoconversion_layer_using_sese_bonding_process.json