Application Of Picosecond Ultrasonic Technology For Cmos Image Sensors

• doi: 10.1109/CSTIC58779.2023.10219348
• title: Application of Picosecond Ultrasonic Technology for CMOS Image Sensors
• publisher: IEEE
• isbn: 979-8-3503-1101-3
• issn:
• rank: 1660
• access_type: LOCKED
• content_type: Conferences
• abstract: Picosecond Ultrasonic Technology (PULSETM Technology) has been widely used in metal, thin-film metrology because of its unique advantages, such as being a rapid, non-contact and non-destructive technology with the capability for simultaneous multiple-layer measurement. In this paper, we describe the advantages of PULSE Technology in the manufacturing of backside illuminated (BSI) CMOS image sensors (CIS). In a front-side illuminated (FSI) sensor, the light reaches the photo diode active region through the passivation, metallization and inter-dielectric layers. The coupling of light from the front side of the sensor results in a loss of light, which in turn results in a reduction in quantum efficiency (QE). Light scattering at the metal layers also contributes to a significant amount of crosstalk, resulting in reduction of the sensor’s signal-to-noise ratio (SNR). A BSI sensor contains the same components as a FSI sensor, but the sensor’s metals are located behind the photodiode. Deposition and dry etching to the thin tungsten (W) film grid at the physical boundaries of each pixel is a common practice for traditional manufacturers. Chemical mechanical polishing (CMP) prior to dry etching provides better top-profile control of the W grid film, resulting in a better SNR and performance. For BSI application, the adoption of PULSE Technology for inline W thickness measurements has proven to be key for device-level process control and yield improvement. Pulse technology use the small spot size which enable measurements in a $15\mu \mathrm{m}$ site size and an ability to map within wafer uniformity profiles to the wafer edge. Besides this, Picosecond ultrasonic measurements are rapid and provide excellent repeatability and long-term stability, making it possible to achieve the high-sampling rate required in a high-volume manufacturing environment.
• article_number: 10219348
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10219348
• html_url: https://ieeexplore.ieee.org/document/10219348/
• abstract_url: https://ieeexplore.ieee.org/document/10219348/
• publication_title: 2023 China Semiconductor Technology International Conference (CSTIC)
• conference_location: Shanghai, China
• conference_dates: 26-27 June 2023
• publication_number: 10219185
• is_number: 10219154
• publication_year: 2023
• publication_date: 26-27 June 2023
• start_page: 1
• end_page: 4
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 140
• insert_date: 20230822
• index_terms:
  • ieee_terms:
    • Semiconductor device measurement
    • Ultrasonic variables measurement
    • Pulse measurements
    • Dry etching
    • Process control
    • CMOS image sensors
    • Acoustics
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Crosstalk
    • Etching
    • Photodiode
    • Long-term Stability
    • Quantum Efficiency
    • Thickness Measurements
    • Metal Layer
    • Manufacturing Technology
    • Passivation Layer
    • Surface Passivation
    • Dry Etching
    • Light Coupling
    • Light Loss
    • Small Spot Size
    • Scanning Electron Microscopy
    • Acoustic Waves
    • Sound Waves
    • Light Reflection
    • Metal Film
    • Deep Trench
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 979-8-3503-1101-3, isbnType: New-2005
  • format: USB ISBN, value: 979-8-3503-1099-3, isbnType: New-2005
  • format: Electronic ISBN, value: 979-8-3503-1100-6, isbnType: New-2005
• authors:
  • Author Name: Johnny Mu
    Affiliation: Onto Innovation, Floor 3, Building 3, 690 Bibo Road, Pudong New District, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37088589045
    ID: 37088589045
    Order: 1
    Author Affiliations:
    • Onto Innovation, Floor 3, Building 3, 690 Bibo Road, Pudong New District, Shanghai, China
  • Author Name: Kaixing Song
    Affiliation: GalaxyCore, No. 198 Xinyuan South Road, Pudong New District, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37089956201
    ID: 37089956201
    Order: 2
    Author Affiliations:
    • GalaxyCore, No. 198 Xinyuan South Road, Pudong New District, Shanghai, China
  • Author Name: Johnny Jin
    Affiliation: Onto Innovation, Floor 3, Building 3, 690 Bibo Road, Pudong New District, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37089955243
    ID: 37089955243
    Order: 3
    Author Affiliations:
    • Onto Innovation, Floor 3, Building 3, 690 Bibo Road, Pudong New District, Shanghai, China
  • Author Name: Cheolkyu Kim
    Affiliation: Onto Innovation, 16-6, Sunae-dong, Bundang-gu, Sungnam-si, Gyunggi-do, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088317919
    ID: 37088317919
    Order: 4
    Author Affiliations:
    • Onto Innovation, 16-6, Sunae-dong, Bundang-gu, Sungnam-si, Gyunggi-do, Korea
  • Author Name: Yaodong Huang
    Affiliation: GalaxyCore, No. 198 Xinyuan South Road, Pudong New District, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37089951102
    ID: 37089951102
    Order: 5
    Author Affiliations:
    • GalaxyCore, No. 198 Xinyuan South Road, Pudong New District, Shanghai, China
  • Author Name: Hong Hong
    Affiliation: Onto Innovation, Floor 3, Building 3, 690 Bibo Road, Pudong New District, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37089946947
    ID: 37089946947
    Order: 6
    Author Affiliations:
    • Onto Innovation, Floor 3, Building 3, 690 Bibo Road, Pudong New District, Shanghai, China

Image Sensor

• sensor_type: CMOS
• resolution:
• dynamic_range:
• pixel_size:
• dark_current:

Optical Data

• focal_length:
• aperture:
• field_of_view:
• distortion:

Performance Metrics

• frame_rate:
• signal_to_noise_ratio: SNR
• sensitivity:
• shutter_speed:
• power_consumption:
• noise:

Applications & Benefits

• cell_imaging:
• benefits: Improvement in quantum efficiency and signal-to-noise ratio with backside illumination.

Supporting Organizations

• supported_by: Onto Innovation, GalaxyCore

Manuscript Details

• publication_date: 26-27 June 2023

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_04a6055c-08d1-4ac4-9b66-3fe481ef665e-application_of_picosecond_ultrasonic_technology_for_cmos_image_sensors.json