Analyzing The Radiation Degradation Of 4Transistor Deep Submicron Technology Cmos Image Sensors

• doi: 10.1109/JSEN.2012.2186287
• title: Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 1655
• access_type: LOCKED
• content_type: Journals
• abstract: This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.
• article_number: 6143978
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6143978
• html_url: https://ieeexplore.ieee.org/document/6143978/
• abstract_url: https://ieeexplore.ieee.org/document/6143978/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6189422
• publication_year: 2012
• publication_date: June 2012
• start_page: 2278
• end_page: 2286
• citing_paper_count: 41
• citing_patent_count: 0
• download_count: 1738
• insert_date: 20120131
• index_terms:
  • ieee_terms:
    • Voltage measurement
    • Logic gates
    • Layout
    • MOSFETs
    • Leakage current
    • Current measurement
  • author_terms:
    • Complementary metal-oxide-semiconductor image sensor
    • dark signal
    • dose
    • hardening-by-design
    • pinned photodiode
    • shallow trench isolation
    • transfer gate
    • X-ray
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Degradation
    • Complementary Metal–oxide–semiconductor Image
    • Complementary Metal Oxide Semiconductor Image
    • Radiation Degradation
    • Irradiation Degradation
    • Significantly Increased
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Integration Time
    • Quantum Efficiency
    • X-ray Irradiation
    • X-ray Radiation
    • Dark Current
    • Short Wavelength Region
    • Dark Signal
    • Electric Field Variation
    • PIN Photodiode
    • Radiation Dose
    • Irradiation Dose
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Current Increases
    • Gene Defects
    • Leakage Current Increases
    • Charge Trapping
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Interface Trap
    • Hot Electrons
    • Hot Carriers
    • Radiation Performance
    • Field Region
    • Source Node
    • Dark Noise
    • Gate Oxide
• authors:
  • Author Name: Jiaming Tan
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37592981800
    ID: 37592981800
    Order: 1
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
  • Author Name: Bernhard Buttgen
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37595685500
    ID: 37595685500
    Order: 2
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
  • Author Name: Albert J. P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 3
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands

Image Sensor

• sensor_type: CMOS
• resolution: 137×197 pixels
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: increased dark random noise after radiation, with a larger tail indicating increased 1/f noise

Applications & Benefits

• cell_imaging: suitable for medical and space applications, enabling digital imaging
• benefits: high-integration capabilities, low-power consumption, radiation tolerance, reduced dark current compared to CCDs

Supporting Organizations

• supported_by: Dutch Technology Foundation STW Project, Philips Healthcare, MESA Imaging

Manuscript Details

• publication_date: June 2012

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources (temporal, fixed-pattern)
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global/rolling shutters
  • backside illumination

Processed JSON Filename

request_4f70e012-8cbb-42bb-89f8-9df0b6f31790-analyzing_the_radiation_degradation_of_4transistor_deep_submicron_technology_cmos_image_sensors.json