Analytical Modeling Of Charge Behavior In Pinned Photodiode For Cmos Image Sensors

• doi: 10.1109/JSEN.2023.3278307
• title: Analytical Modeling of Charge Behavior in Pinned Photodiode for CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 1651
• access_type: LOCKED
• content_type: Journals
• abstract: The thermionic emission mechanism is usually employed to model the charge packet, which is not affected by the potential barrier; however, the electric fields induced by the charge itself are not included in the previous work. We introduce a proposed physical-based model to characterize the whole charge behavior characteristics of the pinned photodiode (PPD) when employing the thermal diffusion, self-induced drifting, and thermionic emission mechanisms together. In addition, the dynamic PPD parameters such as PPD capacitance ( ${C}_{\text {PPD}}{)}$ , PPD potential ( ${V}_{\text {PPD}}{)}$ , and charge transfer potential barrier ( ${V}_{\text {B}}{)}$ are included to characterize the integration and transfer process together based on iterative methods. The model is verified with technology computer-aided design (TCAD) simulations, and the test devices were fabricated in a 0.11- $\mu \text{m}$ CMOS image sensor (CIS) process. The proposed analytical behavior model presents a great convenience for circuit-level simulation of the PPD-based pixels.
• article_number: 10136607
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10136607
• html_url: https://ieeexplore.ieee.org/document/10136607/
• abstract_url: https://ieeexplore.ieee.org/document/10136607/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 10168680
• publication_year: 2023
• publication_date: 1 July1, 2023
• start_page: 14295
• end_page: 14303
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 668
• insert_date: 20230525
• index_terms:
  • ieee_terms:
    • Pins
    • Electric potential
    • Semiconductor device modeling
    • Behavioral sciences
    • Analytical models
    • Charge transfer
    • Capacitance
  • author_terms:
    • Analytical modeling
    • CMOS image sensors (CISs)
    • pinned photodiode (PPD)
    • self-induced drifting
    • thermal diffusion
    • thermionic emission
  • dynamic_index_terms:
    • Charge Behavior
    • PIN Photodiode
    • Behavioral Model
    • Integration Process
    • Diffusion Mechanism
    • Dispersal Mechanisms
    • Thermal Diffusivity
    • Thermionic Emission
    • Richardson Constant
    • Simulation Results
    • Light Intensity
    • Electrostatic Potential
    • Electric Potential
    • Doping Concentration
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Charge Transfer Process
    • Transient Behavior
    • P-n Junction
    • Potential Well
    • Abrupt Transition
    • Efficient Charge Transfer
    • Mathematical Manipulations
    • Charge Transfer Mechanism
• authors:
  • Author Name: Congzhen Hu
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37088902624
    ID: 37088902624
    Order: 1
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Bing Zhang
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37086880421
    ID: 37086880421
    Order: 2
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Youze Xin
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37087230769
    ID: 37087230769
    Order: 3
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Yiyun Xie
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089625499
    ID: 37089625499
    Order: 4
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Pengfei Hu
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089890634
    ID: 37089890634
    Order: 5
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
  • Author Name: Li Geng
    Affiliation: School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37427054500
    ID: 37427054500
    Order: 6
    Author Affiliations:
    • School of Microelectronics and the Key Laboratory of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an Jiaotong University, Xi’an, China

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: 3 µm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: digital imaging in various applications such as smartphones, medical devices, and automotive systems.
• benefits: enabled by converting light into electrical signals for imaging.

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Shaanxi Key Research and Development Plan.

Manuscript Details

• publication_date: 1 July1, 2023

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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