Analysis Of Noise Of Current Accumulator In Timedelayintegration Cmos Image Sensor

• doi: 10.1109/EDSSC.2011.6117724
• title: Analysis of noise of current accumulator in Time-Delay-Integration CMOS image sensor
• publisher: IEEE
• isbn: 978-1-4577-1996-7
• issn:
• partnum: 11EX5873
• rank: 1642
• access_type: LOCKED
• content_type: Conferences
• abstract: The noise of the current accumulator is analyzed. And a model of Time-Delay-Integration (TDI) CMOS image sensor is presented, which is used to analyze the noise performance. In this model, input signals are accumulated 4 times by the type of current and then converted to digital signals to accomplish the other accumulation by 32 times, i.e., 4×32 accumulation mode. The noise, which includes switch charge injection, sample noise and KT/C noise, is considered in this model. The major source of the noise and the relationship between noise and sample capacitance are evaluated through the model simulation. The results indicate that the total noise can be restrained by increasing sample capacitance. When the input signal is arranging from 0μA to 100μA, the accuracy of the current accumulator can be 11bits by using 1pF sample capacitor. And the SNR of the output signal can be increased by 20.38dB which is close to the ideal result.
• article_number: 6117724
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6117724
• html_url: https://ieeexplore.ieee.org/document/6117724/
• abstract_url: https://ieeexplore.ieee.org/document/6117724/
• publication_title: 2011 IEEE International Conference of Electron Devices and Solid-State Circuits
• conference_location: Tianjin, China
• conference_dates: 17-18 Nov. 2011
• publication_number: 6108454
• is_number: 6117556
• publication_year: 2011
• publication_date: 17-18 Nov. 2011
• start_page: 1
• end_page: 2
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 573
• insert_date: 20111229
• index_terms:
  • ieee_terms:
    • Capacitors
    • Signal to noise ratio
    • Integrated circuit modeling
    • Semiconductor device modeling
    • Analytical models
    • Switching circuits
  • author_terms:
    • accumulation noise
    • current accumulator
    • model
    • Time-Delay-Integration (TDI)
  • dynamic_index_terms:
    • Noise Analysis
    • Input Signal
    • Noise Sources
    • Capacity Of Samples
    • Noise Samples
    • Noise Performance
    • Total Noise
    • Accumulation Mode
    • Coarse Mode
    • Aitken Mode
    • Large Capacity
    • Large Capacitance
    • Capacitance Values
    • Capacity Values
    • Noise Power
    • Circuit Current
    • Digital Domain
    • Analog Domain
• isbn_formats:
  • format: Online ISBN, value: 978-1-4577-1996-7, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-1998-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-1997-4, isbnType: New-2005
• authors:
  • Author Name: Cen Gao
    Affiliation: School of Electronic Information and Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38235855200
    ID: 38235855200
    Order: 1
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, Tianjin, China
  • Author Name: Suying Yao
    Affiliation: School of Electronic Information and Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37402574300
    ID: 37402574300
    Order: 2
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, Tianjin, China
  • Author Name: Jiangtao Xu
    Affiliation: School of Electronic Information and Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 3
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, Tianjin, China
  • Author Name: Jing Gao
    Affiliation: School of Electronic Information and Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38239776100
    ID: 38239776100
    Order: 4
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, Tianjin, China
  • Author Name: Kaiming Nie
    Affiliation: School of Electronic Information and Engineering, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085670429
    ID: 37085670429
    Order: 5
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, Tianjin, China

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• signal_to_noise_ratio: 20.38 dB

Applications & Benefits

• cell_imaging: not specified
• benefits: not specified

Supporting Organizations

• supported_by: National Nature Science Foundation of China, ASIC design center of Tianjin University

Manuscript Details

• publication_date: 17-18 Nov. 2011

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

request_107e05fb-587a-451a-af3b-dd90a544c2e9-analysis_of_noise_of_current_accumulator_in_timedelayintegration_cmos_image_sensor.json