Analysis Of Gated Cmos Image Sensor For Spatial Filtering

• doi: 10.1109/TED.2012.2226726
• title: Analysis of Gated CMOS Image Sensor for Spatial Filtering
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1633
• access_type: LOCKED
• content_type: Journals
• abstract: Pulsed gated vision systems are essential tools in obtaining images in obscure environmental conditions. Contrary to the existing gated systems, which use intensifiers and other external equipment, we present a design of gated sensor, which is implemented in a CMOS process. The proposed sensor is capable to filter out the objects according to their distance to the camera. This ability enables to remove the undesired reflections and to see more clearly the target. Such gated vision principle is implemented using a unique multishuttering regime. Various properties of this regime such as charge-transfer mechanisms, frequency of switching, pulsewidth, slew rate, etc., are described and thoroughly analyzed. Upon the performed analysis, we optimize the shape of the shutter pulses and substantially reduce the charge-transfer time. A 128 × 256 CMOS gated image sensor was fabricated in 0.18-μm process and successfully tested. The included experimental results fully corroborate with the theory, showing the sensor functionality and proving the feasibility of the proposed design.
• article_number: 6365291
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6365291
• html_url: https://ieeexplore.ieee.org/document/6365291/
• abstract_url: https://ieeexplore.ieee.org/document/6365291/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 6387647
• publication_year: 2013
• publication_date: Jan. 2013
• start_page: 305
• end_page: 313
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 742
• insert_date: 20121129
• index_terms:
  • ieee_terms:
    • Logic gates
    • Capacitance
    • Switches
    • Charge transfer
    • CMOS integrated circuits
    • Transistors
    • Shape
  • author_terms:
    • Active-pixel sensor
    • charge transfer
    • CMOS image sensors
    • gating
    • global shutter
    • sensor
  • dynamic_index_terms:
    • Spatial Filter
    • Visual System
    • CMOS Process
    • Slew Rate
    • Charge Transfer Mechanism
    • Time Constant
    • Light Pulses
    • Distance Range
    • Transfer Time
    • Amount Of Charge
    • Charge Quantity
    • Parasitic Capacitance
    • Signal Shape
    • Charge Injection
    • Pulsed Source
    • Efficient Charge Transfer
    • Gate Signals
    • Integration Interval
    • External Light Source
    • PIN Photodiode
    • Lateral Drift
    • Maximum Light Intensity
    • Transistor Channel
    • Output Pixel
    • Pulse Rate
    • Pixel Array
    • Laser Pulse
    • Light Intensity
    • Charge Concentration
• authors:
  • Author Name: Arthur Spivak
    Affiliation: VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38270880100
    ID: 38270880100
    Order: 1
    Author Affiliations:
    • VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
  • Author Name: Alexander Belenky
    Affiliation: VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38276353100
    ID: 38276353100
    Order: 2
    Author Affiliations:
    • VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
  • Author Name: Alexander Fish
    Affiliation: Faculty of Engineering, Bar-Ilan University, Ramat-Gan, Israel
    Author URL: https://ieeexplore.ieee.org/author/37268457100
    ID: 37268457100
    Order: 3
    Author Affiliations:
    • Faculty of Engineering, Bar-Ilan University, Ramat-Gan, Israel
  • Author Name: Orly Yadid-Pecht
    Affiliation: Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada
    Author URL: https://ieeexplore.ieee.org/author/38542138600
    ID: 38542138600
    Order: 4
    Author Affiliations:
    • Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada

Image Sensor

• sensor_type: CMOS
• resolution: 128x256
• dynamic_range: Not specified
• pixel_size: 13.75 μm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 100 kHz pulse frequency
• shutter_speed: 10 μs integration time
• noise: 50 mV (injected charge deviation)

Applications & Benefits

• cell_imaging: Used for spatial filtering in scenes with undesired reflections such as in automotive systems or low-visibility conditions.
• benefits: Ability to filter undesired reflections and enhance image quality in various applications.

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: Jan. 2013

Relevancy Score

• score: 8
• missing_fields:
  • quantum_efficiency
  • fill_factor
  • readout_speed
  • noise_sources
  • microlenses
  • colour_filters
  • global_shutters
  • backside_illumination

Processed JSON Filename

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