Analysis Methodology Of Deep Trench Isolation Fieldeffect Passivation Techniques For Image Sensors Through Dedicated Test Structures

• doi: 10.1109/ICMTS59902.2024.10520689
• title: Analysis methodology of Deep Trench Isolation Field-Effect Passivation techniques for Image Sensors through dedicated test structures
• publisher: IEEE
• isbn: 979-8-3503-2990-2
• issn: 1071-9032
• rank: 1628
• access_type: LOCKED
• content_type: Conferences
• abstract: Passivation techniques are mandatory to reduce the CMOS Image Sensors dark current from interfaces. In this work a general analysis methodology is proposed to study the Deep Trench Isolation field-effect passivation thanks to dedicated test structures. Two deep trench isolations are characterized: an electrically active trench and an innovative passive trench using charged Al2O3/SiO2 stacks. The results, validated by TCAD simulations, show that the best passivation is achieved here with the passive trench. Beyond, our approach is demonstrated to be a powerful tool for technologies and pixels developments with a fair passivation efficiency comparison through accumulation or inversion layer carrier concentrations. This work is also a first step toward dark current contribution modeling.
• article_number: 10520689
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10520689
• html_url: https://ieeexplore.ieee.org/document/10520689/
• abstract_url: https://ieeexplore.ieee.org/document/10520689/
• publication_title: 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)
• conference_location: Edinburgh, United Kingdom
• conference_dates: 15-18 April 2024
• publication_number: 10520250
• is_number: 10520251
• publication_year: 2024
• publication_date: 15-18 April 2024
• start_page: 1
• end_page: 6
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 265
• insert_date: 20240510
• index_terms:
  • ieee_terms:
    • Dark current
    • CMOS image sensors
    • Microelectronics
    • Passivation
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Deep Trench Isolation
    • Field Effect Passivation
    • Carrier Concentration
    • Charge Carrier Density
    • Dark Current
    • Inversion Layer
    • Charge Density
    • Charge Distribution
    • Charge Carriers
    • Surface Potential
    • Epitaxial
    • Carrier Density
    • Parasitic Capacitance
    • Flat Band
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • Minority Carrier
    • Interface Trap
    • Accumulation Regime
    • Oxide Capacitance
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 979-8-3503-2990-2, isbnType: New-2005
  • format: Electronic ISBN, value: 979-8-3503-2989-6, isbnType: New-2005
• authors:
  • Author Name: Samuel Tlemsani
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/219617429701486
    ID: 219617429701486
    Order: 1
    Author Affiliations:
    • STMicroelectronics, Crolles, France
    • Institut Supérieur de l'Aéronautique et de l'Espace (ISAE), Toulouse, France
  • Author Name: Stéphane Ricq
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37671689900
    ID: 37671689900
    Order: 2
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: Olivier Marcelot
    Affiliation: Institut Supérieur de l'Aéronautique et de l'Espace (ISAE), Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37643741500
    ID: 37643741500
    Order: 3
    Author Affiliations:
    • Institut Supérieur de l'Aéronautique et de l'Espace (ISAE), Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: Institut Supérieur de l'Aéronautique et de l'Espace (ISAE), Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38353711800
    ID: 38353711800
    Order: 4
    Author Affiliations:
    • Institut Supérieur de l'Aéronautique et de l'Espace (ISAE), Toulouse, France

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Reduced through passivation techniques

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Temporal noise and fixed-pattern noise mentioned, not quantified

Applications & Benefits

• cell_imaging: CMOS Image Sensors are used in smartphones, medical devices, and automotive systems.
• benefits: Allows for digital imaging, reduces dark current through passivation techniques.

Supporting Organizations

• supported_by: STMicroelectronics, Institut Supérieur de l'Aéronautique et de l'Espace (ISAE)

Manuscript Details

• publication_date: 15-18 April 2024

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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