An Over 120 Db Single Exposure Wide Dynamic Range Cmos Image Sensor With Twostage Lateral Overflow Integration Capacitor

• doi: 10.1109/TED.2020.3038621
• title: An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 1521
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.
• article_number: 9281334
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9281334
• html_url: https://ieeexplore.ieee.org/document/9281334/
• abstract_url: https://ieeexplore.ieee.org/document/9281334/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 9306022
• publication_year: 2021
• publication_date: Jan. 2021
• start_page: 152
• end_page: 157
• citing_paper_count: 24
• citing_patent_count: 0
• download_count: 6476
• insert_date: 20201204
• index_terms:
  • ieee_terms:
    • Signal to noise ratio
    • Capacitors
    • Transistors
    • Electric potential
    • Capacitance
    • Voltage measurement
    • Sensitivity
  • author_terms:
    • CMOS image sensor (CIS)
    • lateral overflow integration capacitor (LOFIC)
    • signal-to-noise ratio (SNR)
    • wide dynamic range (WDR)
  • dynamic_index_terms:
    • Dynamic Range
    • Image Sensor
    • Camera Sensor
    • Single Exposure
    • Lateral Overflow Integration Capacitor
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Signal To Noise
    • Signal To Noise Ratio
    • Linear Response
    • Switching Point
    • Photoelectron
    • Photoelectric
    • High Signal
    • High Light
    • High Light Intensity
    • Instrumental Analysis
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • High Signal-to-noise Ratio
    • High Signal To Noise Ratio
    • Multiple Exposures
    • Machine Vision
    • Visual Navigation
    • High Light Conditions
    • Capacity Density
    • Capacitance Density
    • Pixel Pitch
    • Conversion Gain
    • Integration Period
    • Integration Periods
    • Absorption Images
    • Absorption Tomography
    • Inversion Layer
• authors:
  • Author Name: Yasuyuki Fujihara
    Affiliation: Graduate School of Engineering, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086139032
    ID: 37086139032
    Order: 1
    Author Affiliations:
    • Graduate School of Engineering, Tohoku University, Sendai, Japan
  • Author Name: Maasa Murata
    Affiliation: Graduate School of Engineering, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086597404
    ID: 37086597404
    Order: 2
    Author Affiliations:
    • Graduate School of Engineering, Tohoku University, Sendai, Japan
  • Author Name: Shota Nakayama
    Affiliation: Graduate School of Engineering, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088589014
    ID: 37088589014
    Order: 3
    Author Affiliations:
    • Graduate School of Engineering, Tohoku University, Sendai, Japan
  • Author Name: Rihito Kuroda
    Affiliation: Graduate School of Engineering, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37294742300
    ID: 37294742300
    Order: 4
    Author Affiliations:
    • Graduate School of Engineering, Tohoku University, Sendai, Japan
  • Author Name: Shigetoshi Sugawa
    Affiliation: Graduate School of Engineering, Tohoku University, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37284703100
    ID: 37284703100
    Order: 5
    Author Affiliations:
    • Graduate School of Engineering, Tohoku University, Sendai, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 128x128 pixels
• dynamic_range: over 120 dB
• pixel_size: 16 µm
• dark_current: less than 10% of thermal noise at room temperature

Optical Data

• focal_length: 4.0 mm
• aperture: f/4.0
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 285 fps
• signal_to_noise_ratio: 70 dB
• power_consumption: 3.3 V
• noise: 3.5 e- rms

Applications & Benefits

• cell_imaging: For high contrast sensing applications in fields such as machine vision, automotive systems, analytical instruments, and absorption imaging.
• benefits: Achieved over 120-dB dynamic range with two-stage lateral overflow integration capacitors, improving signal-to-noise ratio significantly.

Supporting Organizations

• supported_by: Japan Society for the Promotion of Science (JSPS)

Manuscript Details

• publication_date: Jan. 2021

Relevancy Score

• score: 9
• missing_fields:
  • quantum_efficiency
  • fill_factor
  • readout_speed
  • temporal_noise
  • fixed_pattern_noise
  • analog_to_digital_conversion

Processed JSON Filename

request_059663c8-a37c-4805-a739-adcf40bcd253-an_over_120_db_single_exposure_wide_dynamic_range_cmos_image_sensor_with_twostage_lateral_overflow_integration_capacitor.json