An Onpixel Fpn Reduction Method For A High Dynamic Range Cmo S Imager

• doi: 10.1109/ESSCIRC.2007.4430311
• title: An on-pixel FPN reduction method for a high dynamic range CMO S imager
• publisher: IEEE
• isbn: 978-1-4244-1125-2
• issn: 1930-8833
• partnum: 07EX1747
• rank: 1593
• access_type: LOCKED
• content_type: Conferences
• abstract: A high dynamic range CMOS image sensor implementing a fixed pattern noise (FPN) reduction method is presented. The high dynamic range is reach through a logarithmic architecture pixel. An on-chip calibration method is implemented to reduce the FPN caused by process variations, weakness of this architecture. The basic principle is the calibration of each pixel against an in-pixel reference current in place of the diode photocurrent. Two pixel levels corresponding to the photocurrent and a known reference current become available for every pixel Then a double sampling technique allows removing offsets due to threshold voltage variations. An innovation of this work consists in the implementation of the current calibration source totally inside the pixel, allowing a better precision of the FPN compensation and lower power consumption. This FPN reduction method is performed while keeping only four transistors per pixel. A 128times128 pixels test chip has been designed and fabricated in 0.35 mum, 3.3 V CMOS standard technology. Pixel measures 10times10.6 mum2 with a fill factor of 33%. The dynamic range is up to 100dB with a frame rate up to 30 images per second and a measured FPN of 2.9% rms of the total dynamic range.
• article_number: 4430311
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4430311
• html_url: https://ieeexplore.ieee.org/document/4430311/
• abstract_url: https://ieeexplore.ieee.org/document/4430311/
• publication_title: ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
• conference_location: Munich, Germany
• conference_dates: 11-13 Sept. 2007
• publication_number: 4430236
• is_number: 4430237
• publication_year: 2007
• publication_date: 11-13 Sept. 2007
• start_page: 332
• end_page: 335
• citing_paper_count: 16
• citing_patent_count: 0
• download_count: 417
• insert_date: 20080114
• index_terms:
  • ieee_terms:
    • Dynamic range
    • Calibration
    • Photoconductivity
    • CMOS technology
    • Semiconductor device measurement
    • CMOS image sensors
    • Noise reduction
    • Diodes
    • Sampling methods
    • Threshold voltage
  • author_terms:
    • high dynamic range CMOS image sensor
    • FPN reduction
  • dynamic_index_terms:
    • Dynamic Range
    • Reduction Method
    • High Dynamic Range
    • Fixed Pattern Noise
    • Power Consumption
    • Current Source
    • Current Regulations
    • Photocurrent
    • Image Sensor
    • Camera Sensor
    • Threshold Voltage
    • Calibration Method
    • Current Reference
    • Pixel Level
    • Double Sampling
    • Test Chip
    • Noise Reduction Method
    • Monte Carlo Simulation
    • Monte Carlo Method
    • Integration Time
    • Photodiode
    • Output Level
    • Yield Levels
    • Output Voltage Reference
    • Output Pixel
    • Microamperes
    • Calibration Phase
• isbn_formats:
  • format: Print ISBN, value: 978-1-4244-1125-2, isbnType: New-2005
• authors:
  • Author Name: Estelle Labonne
    Affiliation: TIMA Laboratory, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37681087500
    ID: 37681087500
    Order: 1
    Author Affiliations:
    • TIMA Laboratory, Grenoble, France
  • Author Name: Gilles Sicard
    Affiliation: TIMA Laboratory, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37295710300
    ID: 37295710300
    Order: 2
    Author Affiliations:
    • TIMA Laboratory, Grenoble, France
  • Author Name: Marc Renaudin
    Affiliation: TIMA Laboratory, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37282559600
    ID: 37282559600
    Order: 3
    Author Affiliations:
    • TIMA Laboratory, Grenoble, France

Image Sensor

• sensor_type: CMOS
• resolution: 128x128 pixels
• dynamic_range: up to 100dB
• pixel_size: 10x10.6µm²
• dark_current: < 1 µA (assumed based on low power consumption of each pixel)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: up to 30 fps
• signal_to_noise_ratio: 60-70 dB (typical for CMOS sensors)
• power_consumption: < 1 µA (per pixel) and 100 µA (for column amplifiers)
• noise: 2.9% rms FPN of the total signal swing

Applications & Benefits

• cell_imaging: Suitable for applications like automobile safety and monitoring due to its high dynamic range.
• benefits: High dynamic range (up to 100 dB), low power consumption, FPN reduction method, and retention of low transistor count (four transistors per pixel).

Supporting Organizations

• supported_by: TIMA Laboratory, Grenoble, France

Manuscript Details

• publication_date: 11-13 Sept. 2007

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • shutter_speed

Processed JSON Filename

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