An Eventdetection High Dynamic Range Cmos Image Sensor
- doi: 10.1109/ICSENS.2013.6688546
-
title: An event-detection high dynamic range CMOS image
sensor
- publisher: IEEE
- isbn: 978-1-4673-4642-9
- issn: 1930-0395
- rank: 1571
- access_type: LOCKED
- content_type: Conferences
-
abstract: A novel CMOS image sensor is proposed to
overcome the analog design limitations in Active Pixel Sensors - APS and
large area overcome in Digital Pixel Sensors - DPS for use in
bio-medical applications. The design includes a pixel level event
generation mechanism by using a binary search technique. A ramp voltage
generated by a combined block of 10-bit counter and DAC Digital to
Analog Converter is compared with the pixel integrated voltage at each
clock cycle at the same time allowing a fixed exposure time interval.
The proposed design arrives to a total pixel array area of 1505.62μm ×
4566μm for a pixel array size of 160(Zf) × 120(V). The photo-active area
in each pixel is considered as the N-well area in a p002B;/n-well/p-sub
type photo-transistor corresponding to a size of 11.24μm × 10.76μm. The
overall pixel array reaches a fill factor of %34.
- article_number: 6688546
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6688546
-
html_url:
https://ieeexplore.ieee.org/document/6688546/
-
abstract_url:
https://ieeexplore.ieee.org/document/6688546/
- publication_title: SENSORS, 2013 IEEE
- conference_location: Baltimore, MD, USA
- conference_dates: 3-6 Nov. 2013
- publication_number: 6679330
- is_number: 6688115
- publication_year: 2013
- publication_date: 3-6 Nov. 2013
- start_page: 1
- end_page: 4
- citing_paper_count: 1
- citing_patent_count: 0
- download_count: 338
- insert_date: 20131219
-
index_terms:
-
ieee_terms:
- Radiation detectors
- Clocks
- Arrays
- Random access memory
- Dynamic range
- CMOS image sensors
-
dynamic_index_terms:
- Dynamic Range
- Image Sensor
- Camera Sensor
- High Dynamic Range
- Dynamic Sensor
- Analog-to-digital Converter
- Analog-to-digital
- Digital-to-analog Converter
- Pixel Area
- Parallel Design
- Design Of Analogues
- Binary Search
- Clock Cycles
- Pixel Array
- Voltage Ramp
- Sensor Pixel
- Photodiode
- Pulse Width
- Pulsewidth Modulation
- Output Signal
- Multiple Events
- Limiting Factor
- Cadence
- State Machine
- Finite-state
- Finite State Machine
- Pulsed Mode
- Counter Value
- Bus Lines
- Layout Design
- Multiple Pixels
- Output Pixel
- Serialized
- Encoder Block
-
isbn_formats:
-
format: Electronic ISBN,
value: 978-1-4673-4642-9,
isbnType: New-2005
-
authors:
-
Author Name: Gözen Köklü
Affiliation: Microelectronic Systems Laboratory
(LSM), Swiss Federal Institute of Technology (EPFL)
Author URL:
https://ieeexplore.ieee.org/author/38072984400
ID: 38072984400
Order: 1
Author Affiliations:
-
Microelectronic Systems Laboratory (LSM), Swiss Federal
Institute of Technology (EPFL)
-
Author Name: Dechao Sun
Affiliation: Integrated Systems Laboratory (LSI),
Swiss Federal Institute of Technology (EPFL)
Author URL:
https://ieeexplore.ieee.org/author/37086766707
ID: 37086766707
Order: 2
Author Affiliations:
-
Integrated Systems Laboratory (LSI), Swiss Federal Institute of
Technology (EPFL)
-
Author Name: Yusuf Leblebici
Affiliation: Microelectronic Systems Laboratory
(LSM), Swiss Federal Institute of Technology (EPFL)
Author URL:
https://ieeexplore.ieee.org/author/37276561900
ID: 37276561900
Order: 3
Author Affiliations:
-
Microelectronic Systems Laboratory (LSM), Swiss Federal
Institute of Technology (EPFL)
-
Author Name: Giovanni De Micheli
Affiliation: Integrated Systems Laboratory (LSI),
Swiss Federal Institute of Technology (EPFL)
Author URL:
https://ieeexplore.ieee.org/author/37274174300
ID: 37274174300
Order: 4
Author Affiliations:
-
Integrated Systems Laboratory (LSI), Swiss Federal Institute of
Technology (EPFL)
-
Author Name: Sandro Carrara
Affiliation: Integrated Systems Laboratory (LSI),
Swiss Federal Institute of Technology (EPFL)
Author URL:
https://ieeexplore.ieee.org/author/37299969000
ID: 37299969000
Order: 5
Author Affiliations:
-
Integrated Systems Laboratory (LSI), Swiss Federal Institute of
Technology (EPFL)
Image Sensor
- sensor_type: CMOS
- resolution: 160(H)x120(V)
- dynamic_range: 100 dB
- pixel_size: 11.24 µm x 10.76 µm
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
- frame_rate: 10000 fps
-
sensitivity: Minimum detectable voltage of 0.2 mV
Applications & Benefits
-
cell_imaging: Used in bio-medical applications with
advantages for low-light conditions and long exposure times.
-
benefits: Wide dynamic range, less analog design
limitations, better fill factor compared to existing designs.
Supporting Organizations
-
supported_by: NutriCHIP project, Swiss Nano-Tera.ch
initiative, Swiss National Science Foundation, NanoSys project.
Manuscript Details
- publication_date: 3-6 Nov. 2013
Relevancy Score
- score: 10
-
missing_fields:
- quantum_efficiency
- readout_speed
- noise_sources
- analog_to_digital_conversion
- microlenses
- on_chip_colour_filters
- global_shutter
- rolling_shutter
- backside_illumination
Processed JSON Filename
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