An Analytical Model Of Dynamic Charge Transfer Process For Cmos Image
Sensors
- doi: 10.1109/JSEN.2025.3555631
-
title: An analytical Model of Dynamic Charge Transfer
Process for CMOS Image Sensors
- publisher: IEEE
- isbn:
- issn: 2379-9153
- rank: 1548
- access_type: LOCKED
- content_type: Early Access Articles
-
abstract: An analytical model is proposed to accurately
describe the dynamic charge transfer process between the pinned
photodiode (PPD) and floating diffusion (FD) node in CMOS image sensors.
Two charge motion mechanisms, including self-induced drift and
thermionic emission, are discussed in the proposed model. The transient
charge transfer behavior is analyzed in different exposure conditions.
The parameters such as PPD capacitance, PPD potential, and potential
barrier are involved in describing the charge transfer process. The
model has been verified by TCAD simulation and the test devices were
fabricated with a 0.11 μm CMOS image sensor process. The proposed charge
transfer model provides convenience for optimizing the charge transfer
efficiency of CMOS image sensors.
- article_number: 10948885
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10948885
-
html_url:
https://ieeexplore.ieee.org/document/10948885/
-
abstract_url:
https://ieeexplore.ieee.org/document/10948885/
- publication_title: IEEE Sensors Journal
- conference_location:
- conference_dates:
- publication_number: 7361
- is_number: 4427201
- publication_year: 2025
- publication_date:
- start_page: 1
- end_page: 1
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 0
- insert_date: 20250403
-
index_terms:
-
ieee_terms:
- Charge transfer
- Electrons
- Electric potential
- Junctions
- Analytical models
- Thermionic emission
- Capacitance
- Intelligent sensors
- Capacitors
- CMOS image sensors
-
author_terms:
- CMOS image sensors (CISs)
- pinned photodiode (PPD)
- thermionic emission
- self-induced drift
-
dynamic_index_terms:
- Transfer Process
- Image Sensor
- Camera Sensor
- Charge Transfer Process
- Exposure Conditions
- Exposure Status
- Quantum Efficiency
- Effects Of Drift
- Drift Events
- Transient Behavior
- Efficient Charge Transfer
- Thermionic Emission
- Richardson Constant
- TCAD Simulation
- PIN Photodiode
- High Voltage
- Higher Tendency
- Electron Transfer
- Equilibrium State
- Thermodynamic Equilibrium
- Equilibrium Conditions
- Data Mining
- Doping Concentration
- Blue Box
- Artificial Intelligence Technology
- Depletion Region
- Space Charge Region
- Depletion Zone
- Depletion Layer
- Electron Transfer Process
- Artificial Intelligence Training
- Junction Capacitance
- Orange Box
- Test Chip
- Similar Technologies
- Similar Engineering
- Citation Information
- Junction Region
- Electrons In Region
- Junction Potential
-
authors:
-
Author Name: Jing Gao
Affiliation: School of Microelectronics, Tianjin
University and Tianjin Key Laboratory of Imaging and Sensing
Microelectronic Technology, Tianjin, China
Author URL:
https://ieeexplore.ieee.org/author/38239776100
ID: 38239776100
Order: 1
Author Affiliations:
-
School of Microelectronics, Tianjin University and Tianjin Key
Laboratory of Imaging and Sensing Microelectronic Technology,
Tianjin, China
-
Author Name: Chen Chen
Affiliation: School of Microelectronics, Tianjin
University and Tianjin Key Laboratory of Imaging and Sensing
Microelectronic Technology, Tianjin, China
Author URL:
https://ieeexplore.ieee.org/author/713937990691950
ID: 713937990691950
Order: 2
Author Affiliations:
-
School of Microelectronics, Tianjin University and Tianjin Key
Laboratory of Imaging and Sensing Microelectronic Technology,
Tianjin, China
-
Author Name: Jinghua Ao
Affiliation: School of Microelectronics, Tianjin
University and Tianjin Key Laboratory of Imaging and Sensing
Microelectronic Technology, Tianjin, China
Author URL:
https://ieeexplore.ieee.org/author/651665854116172
ID: 651665854116172
Order: 3
Author Affiliations:
-
School of Microelectronics, Tianjin University and Tianjin Key
Laboratory of Imaging and Sensing Microelectronic Technology,
Tianjin, China
-
Author Name: Tao Luo
Affiliation: College of Intelligence and Computing,
Tianjin University, Tianjin, China
Author URL:
https://ieeexplore.ieee.org/author/37088403706
ID: 37088403706
Order: 4
Author Affiliations:
-
College of Intelligence and Computing, Tianjin University,
Tianjin, China
-
Author Name: Hong Yin
Affiliation: International Iberian Nanotechnology
Laboratory (INL), Braga, Portugal
Author URL:
https://ieeexplore.ieee.org/author/228483495178565
ID: 228483495178565
Order: 5
Author Affiliations:
-
International Iberian Nanotechnology Laboratory (INL), Braga,
Portugal
Image Sensor
- sensor_type: CMOS
- resolution: not specified in the text
- dynamic_range: not specified in the text
- pixel_size: not specified in the text
- dark_current: not specified in the text
Optical Data
- focal_length: not specified in the text
- aperture: not specified in the text
- field_of_view: not specified in the text
- distortion: not specified in the text
Performance Metrics
- frame_rate: not specified in the text
- signal_to_noise_ratio: not specified in the text
- sensitivity: not specified in the text
- shutter_speed: not specified in the text
- power_consumption: not specified in the text
- noise: not specified in the text
Applications & Benefits
- cell_imaging: not specified in the text
- benefits: not specified in the text
Supporting Organizations
-
supported_by: National Key R&D Program of China
(2022YFB3205101) and NSAF (U2230116)
Manuscript Details
- publication_date: not specified in the text
Relevancy Score
- score: 10
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
- cell_imaging
- benefits
- publication_date
Processed JSON Filename
request_44466ae8-5683-441c-bbb5-c8f554e746fd-an_analytical_model_of_dynamic_charge_transfer_process_for_cmos_image_sensors.json