An Amplified Mos Imager Suited For Image Processing

• doi: 10.1109/ISSCC.1994.344658
• title: An amplified MOS imager suited for image processing
• publisher: IEEE
• isbn: 0-7803-1844-7
• issn:
• partnum: 94CH3410-8
• rank: 1541
• access_type: LOCKED
• content_type: Conferences
• abstract: Recent progress in solid-state imaging sensor technology has increased the number of pixels. The increased sensor array size inevitably raises the data rate and leads to difficulties in image processing. Most of these difficulties come from the scanning operation in which spatially adjacent vertical pixels are arranged separately in a time axis. To solve the problem, this amplified MOS imager (AMI) outputs three neighboring lines simultaneously. This permits signals from spatially-adjacent vertical pixels to be handled at the same time. Two advantages made it possible to realize this sensor. One is signal charge amplification to prevent SNR degradation, the other is a non-destructive read-out function. The sensor is fabricated with 0.8 /spl mu/m, double-polysilicon double-aluminum CMOS process technology.<>
• article_number: 344658
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=344658
• html_url: https://ieeexplore.ieee.org/document/344658/
• abstract_url: https://ieeexplore.ieee.org/document/344658/
• publication_title: Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94
• conference_location: San Francisco, CA, USA
• conference_dates: 16-18 Feb. 1994
• publication_number: 1111
• is_number: 8026
• publication_year: 1994
• publication_date: 16-18 Feb. 1994
• start_page: 228
• end_page: 229
• citing_paper_count: 7
• citing_patent_count: 12
• download_count: 122
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Image processing
    • Image sensors
    • Pixel
    • Sensor arrays
    • Blanking
    • Circuits
    • Delay
    • Cameras
    • Laboratories
    • Ambient intelligence
  • dynamic_index_terms:
    • Image Area
    • External Memory
    • Vertical Pixel
• isbn_formats:
  • format: Print ISBN, value: 0-7803-1844-7, isbnType: Historical
• authors:
  • Author Name: M. Sugawara
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37548299400
    ID: 37548299400
    Order: 1
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: H. Kawashima
    Affiliation: ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37287160600
    ID: 37287160600
    Order: 2
    Author Affiliations:
    • ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan
  • Author Name: F. Andoh
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37611664100
    ID: 37611664100
    Order: 3
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: N. Murata
    Affiliation: ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089138384
    ID: 37089138384
    Order: 4
    Author Affiliations:
    • ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan
  • Author Name: Y. Fujita
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/38183044400
    ID: 38183044400
    Order: 5
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: M. Yamawaki
    Affiliation: ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37356884500
    ID: 37356884500
    Order: 6
    Author Affiliations:
    • ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 510(H)x493(V)
• dynamic_range: -50dB to saturation
• pixel_size: 7.2x5.6µm2
• dark_current: 7.2pA

Optical Data

• focal_length:
• aperture:
• field_of_view:
• distortion:

Performance Metrics

• frame_rate:
• signal_to_noise_ratio:
• sensitivity: 72nA
• shutter_speed:
• power_consumption:
• noise:

Applications & Benefits

• cell_imaging:
• benefits:

Supporting Organizations

• supported_by: NHK Science and Technical Research Laboratories, Mitsubishi Electric Corporation

Manuscript Details

• publication_date: 16-18 Feb. 1994

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

request_5f108573-2428-45a1-bbbd-d400eb18f07c-an_amplified_mos_imager_suited_for_image_processing.json