An Advanced Cmos Imager Employing Modified Ar And Acs Methods
- doi: 10.1109/ICSENS.2008.4716705
-
title: An advanced CMOS imager employing modified AR
and ACS methods
- publisher: IEEE
- isbn: 978-1-4244-2581-5
- issn: 1930-0395
- partnum: 08CH38040
- rank: 1535
- access_type: LOCKED
- content_type: Conferences
-
abstract: In this work we present measurements from two
generations of fully operational 128times128 CMOS image sensor arrays.
In these imagers, we have modified two existing design techniques, the
active reset (AR) technique and the active column sensor (ACS) readout
technique, and combined them together to achieve low-noise reset and
improved spatial gain fixed pattern noise (FPN). In addition, we have
implemented three different types of pixels, employing nwell/psub
photodiodes to examine the influence of the shallow trench isolation
(STI) on dark currents of the photodiodes. While the first fabricated
imager served as a basis for different pixels and techniques
examination, the second sensor was designed based on the conclusions
drawn from the measurements of the first imager. Measurements from both
sensors are presented, showing that the proposed architecture achieves
column-level FPN of 0.05%, pixel level FPN of 0.16% and SNR of 15 dB at
illumination level as low as 4 nW/mm2, making it suitable for
applications, where low light detection is required. Other imager
attributes are also presented.
- article_number: 4716705
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4716705
-
html_url:
https://ieeexplore.ieee.org/document/4716705/
-
abstract_url:
https://ieeexplore.ieee.org/document/4716705/
- publication_title: SENSORS, 2008 IEEE
- conference_location: Lecce, Italy
- conference_dates: 26-29 Oct. 2008
- publication_number: 4703548
- is_number: 4716361
- publication_year: 2008
- publication_date: 26-29 Oct. 2008
- start_page: 1386
- end_page: 1389
- citing_paper_count: 1
- citing_patent_count: 0
- download_count: 124
- insert_date: 20081216
-
index_terms:
-
ieee_terms:
- CMOS image sensors
- Pixel
- Sensor arrays
- Image sensors
- Photodiodes
- Dark current
- Optical imaging
- CMOS technology
- Sensor phenomena and characterization
- Lighting
-
dynamic_index_terms:
- Photodiode
- Image Sensor
- Camera Sensor
- Sensor Array
- Active Sensors
- Pixel Level
- Dark Current
- Basis Of Examination
- Illumination Levels
- Types Of Pixels
- Printed Circuit Board
- Differential Amplifier
- Differential Pair
- Unity Gain
- Temporal Noise
- Current Mirror
-
isbn_formats:
-
format: CD,
value: 978-1-4244-2581-5,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4244-2580-8,
isbnType: New-2005
-
authors:
-
Author Name: Marianna Beiderman
Affiliation: University of Calgary, Calgary, AB,
CA
Author URL:
https://ieeexplore.ieee.org/author/38273698500
ID: 38273698500
Order: 1
Author Affiliations:
- University of Calgary, Calgary, AB, CA
-
Author Name: Terence Tam
Affiliation: University of Calgary, Calgary, AB,
CA
Author URL:
https://ieeexplore.ieee.org/author/38272785000
ID: 38272785000
Order: 2
Author Affiliations:
- University of Calgary, Calgary, AB, CA
-
Author Name: Alexander Fish
Affiliation: Electrical & Computer Engineering,
University of Calgary, Calgary, Canada
Author URL:
https://ieeexplore.ieee.org/author/37268457100
ID: 37268457100
Order: 3
Author Affiliations:
-
Electrical & Computer Engineering, University of Calgary,
Calgary, Canada
-
Author Name: Graham A. Gullien
Affiliation: Electrical & Computer Engineering,
University of Calgary, Calgary, Canada
Author URL:
https://ieeexplore.ieee.org/author/38274768200
ID: 38274768200
Order: 4
Author Affiliations:
-
Electrical & Computer Engineering, University of Calgary,
Calgary, Canada
-
Author Name: Orly Yadid-Pecht
Affiliation: Electrical & Computer Engineering,
University of Calgary, Calgary, Canada
Author URL:
https://ieeexplore.ieee.org/author/38298354100
ID: 38298354100
Order: 5
Author Affiliations:
-
Electrical & Computer Engineering, University of Calgary,
Calgary, Canada
-
The VLSI Systems Center, Ben-Gurion University of the Negev,
Beersheba, Israel
Image Sensor
- sensor_type: CMOS
- resolution: 128x128
- dynamic_range: Not explicitly mentioned
- pixel_size: 7μm x 7μm
-
dark_current: 36 nA/cm² (worst case, first imager); 29
nA/cm² (second imager)
Optical Data
- focal_length: Not mentioned
- aperture: Not mentioned
- field_of_view: Not mentioned
- distortion: Not mentioned
Performance Metrics
- frame_rate: 30fps
- signal_to_noise_ratio: 15dB
- sensitivity: Not mentioned
- shutter_speed: Not mentioned
- power_consumption: Not mentioned
- noise: 9.9e- (input referred)
Applications & Benefits
-
cell_imaging: Suitable for low light detection
applications
-
benefits: Achieves low noise performance, improved
spatial gain fixed pattern noise (FPN), and dark current reduction.
Supporting Organizations
- supported_by: CMC Microsystems
Manuscript Details
- publication_date: 26-29 Oct. 2008
Relevancy Score
- score: 9
-
missing_fields:
- focal_length
- aperture
- field_of_view
- distortion
- sensitivity
- shutter_speed
- power_consumption
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