Alice Its3 Technology Qualification Results On Prototype Sensor Structures
Of Novel Bent Wafer Scale 65Nm Cmos Sensors
- doi: 10.1109/NSSMICRTSD49126.2023.10338255
-
title: ALICE ITS3: Technology Qualification Results on
Prototype Sensor Structures of Novel Bent Wafer Scale 65nm CMOS Sensors
- publisher: IEEE
- isbn: 979-8-3503-3867-6
- issn: 1082-3654
- rank: 1360
- access_type: LOCKED
- content_type: Conferences
-
abstract: The ALICE collaboration is currently
developing a new vertex detector ("ITS3"), which is planned to be
installed in 2026 - 2028 during LHC long shutdown 3 to replace the three
innermost layers (Inner Barrel) of the current Inner Tracking System as
from Run 4 onwards. ITS3 is based on a truly innovative concept,
comprising the use of ultra-thin (50 micrometers) silicon wafers and
stitching technologies in 65nm CMOS imaging process to produce large
area (10cm x 26cm) Monolithic Active Pixels Sensors sensors which can be
bent to half-cylindrical shapes of 18, 24 and 30 mm bending radii for
layer 0, 1 and 2 respectively. The ITS3 will thus be built of six
stitched sensors kept in place using slices of carbon foam. Together
with a very low power consumption of about 20mV/cm2 allowing for air
cooling, no further mechanical and electrical support structures are
required, resulting in an extermely low material budget of less than
0.05\% of a radiation length per layer, providing extremely good
tracking and vertexing capabilities.Within the comprehensive R\&D
program for the ITS3 different analogue and digital test structures with
various pixel pitch sizes, matrices and readout circuits have been
produced and extensively tested in various particle beams before and
after irradiation with TID and NIEL to validate the ITS3 technology
approachIn this contribution we present an overview on the various
prototypes and selected results on the detection performancve
measurements in the laboratory and in test beams using various chip
settings.
- article_number: 10338255
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10338255
-
html_url:
https://ieeexplore.ieee.org/document/10338255/
-
abstract_url:
https://ieeexplore.ieee.org/document/10338255/
-
publication_title: 2023 IEEE Nuclear Science Symposium,
Medical Imaging Conference and International Symposium on
Room-Temperature Semiconductor Detectors (NSS MIC RTSD)
- conference_location: Vancouver, BC, Canada
- conference_dates: 4-11 Nov. 2023
- publication_number: 10337770
- is_number: 10337807
- publication_year: 2023
- publication_date: 4-11 Nov. 2023
- start_page: 1
- end_page: 1
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 27
- insert_date: 20231213
-
index_terms:
-
ieee_terms:
- Particle beams
- Semiconductor device measurement
- Particle beam measurements
- Shape
- Semiconductor detectors
- Prototypes
- CMOS image sensors
-
dynamic_index_terms:
- 65-nm CMOS
- Tracking System
- Tracking Devices
- Silicon Wafer
- Bending Radius
- Bending Radii
- Beam Test
- Readout Circuit
- Radiation Length
- Irradiated Length
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 979-8-3503-3867-6,
isbnType: New-2005
-
format: Electronic ISBN,
value: 979-8-3503-3866-9,
isbnType: New-2005
-
authors:
Image Sensor
- sensor_type: CMOS
- resolution: 10cm x 26cm
- dynamic_range: not specified
- pixel_size: not specified
- dark_current: not specified
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
- power_consumption: 20mV/cm²
Applications & Benefits
- cell_imaging: not specified
-
benefits: Extremely low material budget of less than
0.05% of a radiation length per layer, providing extremely good tracking
and vertexing capabilities.
Supporting Organizations
- supported_by: CERN, Geneva, Switzerland
Manuscript Details
- publication_date: 4-11 Nov. 2023
Relevancy Score
- score: 8
-
missing_fields:
- fill factor
- quantum efficiency
- readout speed
- noise sources
- analog-to-digital conversion techniques
- design considerations
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