Activation Of Silicon Wafer By Excimer Laser

• doi: 10.1109/RTP.2010.5623789
• title: Activation of silicon wafer by excimer laser
• publisher: IEEE
• isbn: 978-1-4244-8399-0
• issn: 1944-0251
• partnum: 10EX4711
• rank: 1373
• access_type: LOCKED
• content_type: Conferences
• abstract: The application of lasers for annealing wafer-based and thin-film microelectronic devices is steadily increasing. Excellent control of material characteristics such as the dopant activation profile are achieved through proper selection of the laser parameters which directly influence the laser material interaction; these include wavelength, pulse duration and fluency. Nanosecond pulses at short UV wavelengths, as emitted by excimer lasers, are particularly beneficial for shallow activation and the increasing demand to keep the overall temperature budget low during the anneal. The short wavelength of e.g. 308nm or 248nm leads to an absorption depth of less than 10 nm in crystalline silicon that enables the deposition of the laser energy in a small confined volume. In this paper, we look at lasers, optics and annealing systems that have proved themselves in the annealing of semiconductor wafers. The application of a system for the uniform shallow activation of Back-Side-Illuminated (BSI) CMOS image sensors will be discussed in detail. This annealing system is based on a proven industrial excimer laser and yields a high uniformity of sheet resistance that is better than 0.5% (sigma). A unique optics system has been developed to provide a highly uniform thin line beam of 300 mm length. The wafer is covered in a single scan so that the process time for a 12" wafer is reduced to only 20 seconds. Results from recent application work involving dopant activation for silicon wafers will also be presented.
• article_number: 5623789
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5623789
• html_url: https://ieeexplore.ieee.org/document/5623789/
• abstract_url: https://ieeexplore.ieee.org/document/5623789/
• publication_title: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP)
• conference_location: Gainesville, FL, USA
• conference_dates: 28 Sept.-1 Oct. 2010
• publication_number: 5613078
• is_number: 5623598
• publication_year: 2010
• publication_date: 28 Sept.-1 Oct. 2010
• start_page: 98
• end_page: 102
• citing_paper_count: 6
• citing_patent_count: 28
• download_count: 566
• insert_date: 20101109
• index_terms:
  • ieee_terms:
    • Artificial neural networks
    • Lasers
  • author_terms:
    • laser annealing
    • dopant activation
    • shallow activation
    • back side illuminated image sensor
  • dynamic_index_terms:
    • Silicon Wafer
    • Excimer Laser
    • Optical System
    • Optical Devices
    • Pulse Duration
    • Short Wavelength
    • Shorter Wavelengths
    • Image Sensor
    • Camera Sensor
    • Sheet Resistance
    • Surface Resistance
    • UV Wavelength
    • Crystalline Silicon
    • Nanosecond Pulses
    • Uniform Line
    • Irradiation
    • High Power
    • High Throughput
    • Energy Density
    • Intensity Levels
    • Linewidth
    • Downscaling
    • Semiconductor Devices
    • Flat Panel
    • Flat Panel Displays
    • Flat Screen
    • Fast Rise Time
    • Pulse Length
    • Absorber Layer
    • Annealing Step
    • Wavelength Selection
    • Selection Of Wavelengths
    • Flat Top
• isbn_formats:
  • format: CD, value: 978-1-4244-8399-0, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-8400-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-8401-0, isbnType: New-2005
• authors:
  • Author Name: Rainer Paetzel
    Affiliation: Coherent GmbH, Gottingen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37595868600
    ID: 37595868600
    Order: 1
    Author Affiliations:
    • Coherent GmbH, Gottingen, Germany
  • Author Name: Jan Brune
    Affiliation: Coherent GmbH, Gottingen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37603797500
    ID: 37603797500
    Order: 2
    Author Affiliations:
    • Coherent GmbH, Gottingen, Germany
  • Author Name: Frank Simon
    Affiliation: Coherent GmbH, Gottingen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37287008900
    ID: 37287008900
    Order: 3
    Author Affiliations:
    • Coherent GmbH, Gottingen, Germany
  • Author Name: Ludolf Herbst
    Affiliation: Coherent GmbH, Gottingen, Germany
    Author URL: https://ieeexplore.ieee.org/author/37595871700
    ID: 37595871700
    Order: 4
    Author Affiliations:
    • Coherent GmbH, Gottingen, Germany
  • Author Name: Masashi Machida
    Affiliation: Japan Steel Works Limited, Yokohama, Japan
    Author URL: https://ieeexplore.ieee.org/author/37604649900
    ID: 37604649900
    Order: 5
    Author Affiliations:
    • Japan Steel Works Limited, Yokohama, Japan
  • Author Name: Junichi Shida
    Affiliation: Japan Steel Works Limited, Yokohama, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089047916
    ID: 37089047916
    Order: 6
    Author Affiliations:
    • Japan Steel Works Limited, Yokohama, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 200 mm wafers
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• power_consumption: 300 W

Applications & Benefits

• cell_imaging: Used in Back Side Illuminated (BSI) CMOS image sensors for improved light sensitivity and uniformity.
• benefits: Allows high uniformity in sheet resistance and stable activation of dopants, improving performance in image sensors.

Supporting Organizations

• supported_by: The Japan Steel Works, Ltd.

Manuscript Details

• publication_date: 28 Sept.-1 Oct. 2010

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_5be94011-b22e-45cb-a1b9-c7833a491a5f-activation_of_silicon_wafer_by_excimer_laser.json