A Wide Dynamic Range Cmos Digital Pixel Sensor

• doi: 10.1109/MWSCAS.2002.1186892
• title: A wide dynamic range CMOS digital pixel sensor
• publisher: IEEE
• isbn: 0-7803-7523-8
• issn:
• partnum: 02CH37378
• rank: 1339
• access_type: LOCKED
• content_type: Conferences
• abstract: A CMOS image sensor with pixel level analog to digital conversion is presented. Each 13.8/spl mu/m /spl times/ 13.8/spl mu/m pixel area contains a photodiode and a dynamic comparator using the maximum voltage swing available (0V-1.8V). The comparator does not need any bias current and is insensitive to fabrication process variations. Also a digital to analog converter (DAC) is used to deliver a voltage reference in order to compare it with the pixel voltage for the analog to digital conversion. This DAC provides the possibility to convert the pixel voltage linearly or to compress it logarithmically. The circuit allows image captures at multiple exposure times, and the resulting values are delivered in floating digital format, offering the possibility to expand the intrascene dynamic range to more than 84 dB. The circuit was implemented in a CMOS 0.18/spl mu/m process and has been submitted for fabrication.
• article_number: 1186892
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1186892
• html_url: https://ieeexplore.ieee.org/document/1186892/
• abstract_url: https://ieeexplore.ieee.org/document/1186892/
• publication_title: The 2002 45th Midwest Symposium on Circuits and Systems, 2002. MWSCAS-2002.
• conference_location: Tulsa, OK, USA
• conference_dates: 4-7 Aug. 2002
• publication_number: 8452
• is_number: 26620
• publication_year: 2002
• publication_date: 4-7 Aug. 2002
• start_page: II
• end_page: II
• citing_paper_count: 9
• citing_patent_count: 1
• download_count: 332
• insert_date: 20030320
• index_terms:
  • ieee_terms:
    • Dynamic range
    • Voltage
    • CMOS image sensors
    • Analog-digital conversion
    • Fabrication
    • Circuits
    • Pixel
    • Photodiodes
    • Digital-analog conversion
    • Image converters
  • dynamic_index_terms:
    • Dynamic Range
    • Dynamic Sensor
    • Sensor Pixel
    • Digital Pixel
    • Exposure Time
    • Photodiode
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Image Sensor
    • Camera Sensor
    • Image Capture
    • Multiple Exposures
    • CMOS Process
    • Voltage Swing
    • High-resolution
    • CCD Camera
    • Charge-coupled Device
    • Power Consumption
    • Data Transfer
    • System Architecture
    • Inverter
    • Dynamic Imaging
    • Low Power Consumption
    • Remote Memory
    • Cache Memory
    • External Voltage
    • Minimal Exposure
    • Offset Voltage
• isbn_formats:
  • format: Print ISBN, value: 0-7803-7523-8, isbnType: Historical
• authors:
  • Author Name: J.-L. Trepanier
    Affiliation: Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory
    Author URL: https://ieeexplore.ieee.org/author/38185010200
    ID: 38185010200
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory
  • Author Name: M. Sawan
    Affiliation: Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory, Canada
    Author URL: https://ieeexplore.ieee.org/author/37276702600
    ID: 37276702600
    Order: 2
    Author Affiliations:
    • Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory, Canada
  • Author Name: Y. Audet
    Affiliation: Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory, Canada
    Author URL: https://ieeexplore.ieee.org/author/37273900300
    ID: 37273900300
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory, Canada
  • Author Name: J. Coulombe
    Affiliation: Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory, Canada
    Author URL: https://ieeexplore.ieee.org/author/37427728400
    ID: 37427728400
    Order: 4
    Author Affiliations:
    • Department of Electrical Engineering, PolySTIM Neurotechnologies Laboratory, Canada

Image Sensor

• sensor_type: CMOS
• resolution: 32x32 pixels
• dynamic_range: 84 dB
• pixel_size: 13.8 µm x 13.8 µm
• dark_current: 27.65 fA

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• shutter_speed: Programmable exposure times
• power_consumption: Low power consumption, circuit consumes no power in idle mode

Applications & Benefits

• cell_imaging: Wide dynamic range imaging, on-chip processing capabilities
• benefits: Compact size and low power consumption, suitable for portable devices.

Supporting Organizations

• supported_by: NSERC, NATEQ, Canadian Microelectronics Corporation.

Manuscript Details

• publication_date: 4-7 Aug. 2002

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • noise

Processed JSON Filename

request_c175126b-6b21-4778-86c5-94e5f85107d5-a_wide_dynamic_range_cmos_digital_pixel_sensor.json