A Time Delay Multiple Integration Linear Cmos Image Sensor For Multispectral Satellite Telemetry

• doi: 10.1109/ASSCC.2016.7844129
• title: A time delay multiple integration linear CMOS image sensor for multispectral satellite telemetry
• publisher: IEEE
• isbn: 978-1-5090-3701-8
• issn:
• rank: 1326
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents a time delay multiple integration (TDMI) linear CMOS image sensor for multispectral satellite telemetry. With the proposed hybrid structure of analog and digital accumulation, the implemented time delay multiple integrator integrates the functions of TDI, multiple sampling (MS), and analog-to-digital conversion in a single chip. An 8 × 128 linear CMOS image sensor prototype was fabricated in 0.18-μm 1P6M 1.8 V CMOS technology. With an operation of ×8 TDI, ×64 MS, and a line time of 414.72 μs, the measured sensitivity, SNR improvement, and power consumption are 40.42 V/lux-s, 9.37 dB, and 17.77 mW, respectively.
• article_number: 7844129
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7844129
• html_url: https://ieeexplore.ieee.org/document/7844129/
• abstract_url: https://ieeexplore.ieee.org/document/7844129/
• publication_title: 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)
• conference_location: Toyama, Japan
• conference_dates: 7-9 Nov. 2016
• publication_number: 7833314
• is_number: 7844119
• publication_year: 2016
• publication_date: 7-9 Nov. 2016
• start_page: 37
• end_page: 40
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 627
• insert_date: 20170209
• index_terms:
  • ieee_terms:
    • Signal to noise ratio
    • Radiation detectors
    • Random access memory
    • Capacitors
    • Adders
    • Latches
    • Imaging
  • author_terms:
    • time-delay integration (TDI)
    • line-scan imaging sensor
    • multispectral (XS)
    • capacitive trans-impedance amplifier (CTIA)
    • multiple sampling (MS)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Multiple Integration
    • Double Integral
    • Linear Image
    • Linear Sensor
    • Power Consumption
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • CMOS Technology
    • Signal-to-noise Ratio Improvement
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Binary Code
    • Bitstream
    • Binary Sequence
    • Shot Noise
    • Poisson Noise
    • Pixel Pitch
    • Conversion Gain
    • Readout Time
    • Output Pixel
    • Readout Circuit
    • Readout Noise
    • Digital Operations
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5090-3701-8, isbnType: New-2005
  • format: Print ISBN, value: 978-1-5090-3699-8, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5090-3700-1, isbnType: New-2005
• authors:
  • Author Name: Kuan-Lin Liu
    Affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086071477
    ID: 37086071477
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
  • Author Name: Chih-Cheng Hsieh
    Affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37365236900
    ID: 37365236900
    Order: 2
    Author Affiliations:
    • Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
  • Author Name: Sheng-Yeh Lai
    Affiliation: National Applied Research Laboratories, National Chip Implementation Center, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086167831
    ID: 37086167831
    Order: 3
    Author Affiliations:
    • National Applied Research Laboratories, National Chip Implementation Center, Hsinchu, Taiwan
  • Author Name: Chin-Fong Chiu
    Affiliation: National Applied Research Laboratories, National Chip Implementation Center, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37348347200
    ID: 37348347200
    Order: 4
    Author Affiliations:
    • National Applied Research Laboratories, National Chip Implementation Center, Hsinchu, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: 8 x 128 pixels
• dynamic_range: Not specified
• pixel_size: 30 x 30 µm2
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 2411 lines/s
• signal_to_noise_ratio: 9.37 dB
• sensitivity: 40.42 V/lux·s
• power_consumption: 17.77 mW

Applications & Benefits

• cell_imaging: Not specified
• benefits: Improved SNR, high sensitivity under low illumination

Supporting Organizations

• supported_by: National Chip Implementation Center (CIC), National Space Organization (NSPO), Signal Sensing and Application Lab (SiSAL), National Tsing Hua University, Taiwan, Ministry of Science and Technology, Taiwan

Manuscript Details

• publication_date: 7-9 Nov. 2016

Relevancy Score

• score: 9
• missing_fields:
  • quantum_efficiency
  • readout_speed
  • noise_sources
  • microlenses
  • on_chip_colour_filters
  • global_or_rolling_shutters
  • backside_illumination

Processed JSON Filename

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