A Theory Of Multiplication Noise For Electron Multiplying Cmos Image Sensors

• doi: 10.1109/TED.2014.2320966
• title: A Theory of Multiplication Noise for Electron Multiplying CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 956
• access_type: LOCKED
• content_type: Journals
• abstract: An electron multiplying CMOS images sensor (emCMOS) enables electron multiplication inside the pixel by the use of high voltage ( \(hv\) ) phase(s) under gate(s). Different possible implementations of \(hv\) gates dedicated to impact ionization require specific multiplication patterns and therefore new excess noise formulation. This paper presents a rigorous mathematical approach to the calculation of the excess noise factor for all electron multiplying CMOS pixel structures in the framework of the branching processes and the compounding theorem of the probability generating function. Validation of the model is performed by computing the variance formula for one pixel structure and its corresponding Monte Carlo simulation of the stochastic processes. The signal over noise ratio including the readout noise, SNRro, is introduced to evaluate the possible extreme low light imaging performance as a function of the multiplication parameters.
• article_number: 6814834
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6814834
• html_url: https://ieeexplore.ieee.org/document/6814834/
• abstract_url: https://ieeexplore.ieee.org/document/6814834/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 6837542
• publication_year: 2014
• publication_date: July 2014
• start_page: 2412
• end_page: 2418
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 542
• insert_date: 20140513
• index_terms:
  • ieee_terms:
    • Noise
    • Logic gates
    • Monte Carlo methods
    • Photodiodes
    • Mathematical model
    • Impact ionization
    • CMOS image sensors
  • author_terms:
    • CMOS image sensor (CIS)
    • electron multiplication
    • electron multiplying CMOS (emCMOS)
    • excess noise factor (ENF).
    • CMOS image sensor (CIS)
    • electron multiplication
    • electron multiplying CMOS (emCMOS)
    • excess noise factor (ENF)
  • dynamic_index_terms:
    • Multiplicative Noise
    • Model Validation
    • Monte Carlo Simulation
    • Monte Carlo Method
    • Phase Voltage
    • Impact Ionization
    • Excessive Noise
    • Branching Process
    • Readout Noise
    • Variance Formula
    • Low-light Image
    • Multiple Processes
    • Propagation Process
    • Algebra
    • General Case
    • Time Slot
    • Figure Of Merit
    • Multiple Structures
    • Shot Noise
    • Poisson Noise
    • Probability Mass Function
    • Avalanche Photodiode
    • Multiplicative Gain
    • PIN Photodiode
• authors:
  • Author Name: Timothée Brugière
    Affiliation: Université de Lyon, Lyon, France
    Author URL: https://ieeexplore.ieee.org/author/37086628248
    ID: 37086628248
    Order: 1
    Author Affiliations:
    • Université de Lyon, Lyon, France
  • Author Name: Fréderic Mayer
    Affiliation: e2v, Saint Egréve, France
    Author URL: https://ieeexplore.ieee.org/author/37700780900
    ID: 37700780900
    Order: 2
    Author Affiliations:
    • e2v, Saint Egréve, France
  • Author Name: Pierre Fereyre
    Affiliation: e2v, Saint Egréve, France
    Author URL: https://ieeexplore.ieee.org/author/37086623527
    ID: 37086623527
    Order: 3
    Author Affiliations:
    • e2v, Saint Egréve, France
  • Author Name: Agnès Dominjon
    Affiliation: French National Centre for Scientific Research, Institut de Physique Nucléaire de Lyon, Villeurbanne, France
    Author URL: https://ieeexplore.ieee.org/author/37410870400
    ID: 37410870400
    Order: 4
    Author Affiliations:
    • French National Centre for Scientific Research, Institut de Physique Nucléaire de Lyon, Villeurbanne, France
  • Author Name: Remi Barbier
    Affiliation: French National Centre for Scientific Research, Institut de Physique Nucléaire de Lyon, Villeurbanne, France
    Author URL: https://ieeexplore.ieee.org/author/37268389800
    ID: 37268389800
    Order: 5
    Author Affiliations:
    • French National Centre for Scientific Research, Institut de Physique Nucléaire de Lyon, Villeurbanne, France

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Scientific and night vision applications, low light imaging performance
• benefits: Enables electron multiplication to achieve signal-to-noise ratio improvement in low light conditions.

Supporting Organizations

• supported_by: DGA: RAPID-2011-MULTIMOS

Manuscript Details

• publication_date: July 2014

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_061cc054-8582-4d9f-9487-29c3e3fb0a7c-a_theory_of_multiplication_noise_for_electron_multiplying_cmos_image_sensors.json