A Test Structure For Statistical Evaluation Of Pn Junction Leakage Current Based On Cmos Image Sensor Technology

• doi: 10.1109/ICMTS.2010.5466868
• title: A test structure for statistical evaluation of pn junction leakage current based on CMOS image sensor technology
• publisher: IEEE
• isbn: 978-1-4244-6914-7
• issn: 2158-1029
• partnum: 10CH38234
• rank: 1321
• access_type: LOCKED
• content_type: Conferences
• abstract: We propose a test structure to enable us to evaluate statistical distributions of small pn junction leakage currents of numerous samples in a very short time (0.1 – 10 fA, 28,672 n+/p diodes in 0.77s). This test structure is based on a CMOS active pixel image sensor, which contains a current-to-voltage conversion function by a capacitor and amplifiers of voltage signals in each pixel. The test structure can be designed easily because of a small number of mask layer requirements (at least one metal layer). Its simplicity has considerable benefits such as an easy fabrication for various processes without exceptional cares and also produces usefulness of statistical evaluation for anomalous pn junction leakage phenomena such as extremely large currents or dynamic and quantum fluctuations which show more and more as the device dimension shrinks.
• article_number: 5466868
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5466868
• html_url: https://ieeexplore.ieee.org/document/5466868/
• abstract_url: https://ieeexplore.ieee.org/document/5466868/
• publication_title: 2010 International Conference on Microelectronic Test Structures (ICMTS)
• conference_location: Hiroshima, Japan
• conference_dates: 22-25 March 2010
• publication_number: 5462931
• is_number: 5466808
• publication_year: 2010
• publication_date: 22-25 March 2010
• start_page: 18
• end_page: 22
• citing_paper_count: 3
• citing_patent_count: 1
• download_count: 605
• insert_date: 20100520
• index_terms:
  • ieee_terms:
    • Testing
    • Leakage current
    • CMOS image sensors
    • CMOS technology
    • Pixel
    • Statistical distributions
    • Diodes
    • Image sensors
    • Image converters
    • Capacitors
  • author_terms:
    • CMOS active pixel image sensor
    • MOSFETs
    • pn junction leakage currents
    • statistical evaluation
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • P-n Junction
    • Junction Leakage
    • Junction Leakage Current
    • CMOS Image Sensor Technology
    • Metal Layer
    • Quantum Fluctuations
    • Vacuum Fluctuations
    • Small Leakage
    • CCD Camera
    • Charge-coupled Device
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Measurement Methodology
    • Turn Off
    • Memory Applications
    • Shift Register
    • Test Circuit
    • Gate Leakage
    • Application Of Logic
    • Junction Capacitance
    • Array Of Unit Cells
• isbn_formats:
  • format: Online ISBN, value: 978-1-4244-6914-7, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-6912-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-6915-4, isbnType: New-2005
• authors:
  • Author Name: Kenichi Abe
    Affiliation: Graduate School of Engineering, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37277544900
    ID: 37277544900
    Order: 1
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Japan
  • Author Name: Takafumi Fujisawa
    Affiliation: Graduate School of Engineering, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37391076200
    ID: 37391076200
    Order: 2
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Japan
  • Author Name: Hiroyoshi Suzuki
    Affiliation: Graduate School of Engineering, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37274658600
    ID: 37274658600
    Order: 3
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Japan
  • Author Name: Shunichi Watabe
    Affiliation: Graduate School of Engineering, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37397173400
    ID: 37397173400
    Order: 4
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Japan
  • Author Name: Rihito Kuroda
    Affiliation: Graduate School of Engineering, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37294742300
    ID: 37294742300
    Order: 5
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Japan
  • Author Name: Shigetoshi Sugawa
    Affiliation: Graduate School of Engineering, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37284703100
    ID: 37284703100
    Order: 6
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Japan
  • Author Name: Akinobu Teramoto
    Affiliation: New Industry Creation Hatchery Center, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37294741800
    ID: 37294741800
    Order: 7
    Author Affiliations:
    • New Industry Creation Hatchery Center, University of Tohoku, Japan
  • Author Name: Tadahiro Ohmi
    Affiliation: New Industry Creation Hatchery Center, University of Tohoku, Japan
    Author URL: https://ieeexplore.ieee.org/author/37267281400
    ID: 37267281400
    Order: 8
    Author Affiliations:
    • New Industry Creation Hatchery Center, University of Tohoku, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 128 x 224 (28,672 cells)
• dynamic_range: Not specified in the text
• pixel_size: Not specified in the text
• dark_current: 0.1 – 10 fA (femtoamperes) measured from 28,672 n+/p diodes in 0.77s (with averaging)

Optical Data

• focal_length: Not specified in the text
• aperture: Not specified in the text
• field_of_view: Not specified in the text
• distortion: Not specified in the text

Performance Metrics

• frame_rate: Not specified in the text
• signal_to_noise_ratio: Calculated through voltage change; specific SNR value not provided
• sensitivity: Not specified in the text
• shutter_speed: Not specified in the text
• power_consumption: Not specified in the text
• noise: Not specified in the text

Applications & Benefits

• cell_imaging: Used for evaluating dark current in CMOS image sensors and statistical analysis of pn junction leakage currents
• benefits: Enables fast statistical evaluation of leakage currents with a simple circuit design that can be fabricated across various CMOS processes.

Supporting Organizations

• supported_by: Tohoku University, Asahi Kasei Microdevices Corporation, and Dr. M. Toita for technical support regarding fabrication.

Manuscript Details

• publication_date: 22-25 March 2010

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip color filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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