A Snapshot Cmos Image Sensor With Extended Dynamic Range

• doi: 10.1109/JSEN.2008.2011073
• title: A Snapshot CMOS Image Sensor With Extended Dynamic Range
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 927
• access_type: LOCKED
• content_type: Journals
• abstract: In this paper, a proof of concept for a snapshot CMOS image sensor with extended dynamic range is presented. A prototype of 32 times 32 pixels has been fabricated using the 1-poly 4-metal CMOS 0.35 mum process available through MOSIS and was successfully tested. The measurements from the test chip showed that the fabricated imager allows wide dynamic range (WDR) operation in a snapshot readout mode. This DR extension has become possible due to a unique in-pixel architecture allowing automatic adaptation of each pixel in the array to its illumination level. To reduce the pixel power dissipation various low-power design techniques have been utilized in the pixel design. A single pixel occupies 18 * 18(mum)2 and dissipates 23 nW with 8 bit DR expansion at room light level, and 29 nW at high illumination level, equivalent to clear sky at video rate. The power dissipation of the whole sensor (including the supporting circuitry) is 450 muW at video rate. Sensor design is described, design considerations are shown and measurements from the test chip are presented.
• article_number: 4749395
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4749395
• html_url: https://ieeexplore.ieee.org/document/4749395/
• abstract_url: https://ieeexplore.ieee.org/document/4749395/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 4749392
• publication_year: 2009
• publication_date: Feb. 2009
• start_page: 103
• end_page: 111
• citing_paper_count: 10
• citing_patent_count: 1
• download_count: 639
• insert_date: 20090113
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Dynamic range
    • Testing
    • Semiconductor device measurement
    • Lighting
    • Power dissipation
    • Prototypes
    • CMOS process
    • Adaptive arrays
    • Circuits
  • author_terms:
    • CMOS imagers
    • high dynamic range
    • image sensor
    • integration time
    • low-power
    • very large scale integration (VLSI)
  • dynamic_index_terms:
    • Dynamic Range
    • Image Sensor
    • Camera Sensor
    • Design Considerations
    • Design Techniques
    • Room Light
    • Illumination Levels
    • Pixel Array
    • Video Rate
    • Video Evaluation
    • Test Chip
    • Light Intensity
    • Integration Time
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Inverter
    • Threshold Voltage
    • Supply Voltage
    • Fill Factor
    • Advanced Sensors
    • Digital Circuits
    • Digital Circuitry
    • Incident Light Intensity
    • Final Voltage
    • Digital Output
    • Integration Period
    • Low-voltage Operation
    • Sensor Operation
    • Internal Lines
    • Analog Output
    • Digital Storage
    • Integration Sphere
    • Ulbricht Sphere
    • Illumination Conditions
• authors:
  • Author Name: Alexander Belenky
    Affiliation: Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38276353100
    ID: 38276353100
    Order: 1
    Author Affiliations:
    • Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
  • Author Name: Alexander Fish
    Affiliation: Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/37268457100
    ID: 37268457100
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
  • Author Name: Arthur Spivak
    Affiliation: Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38270880100
    ID: 38270880100
    Order: 3
    Author Affiliations:
    • Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
  • Author Name: Orly Yadid-Pecht
    Affiliation: Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38298354100
    ID: 38298354100
    Order: 4
    Author Affiliations:
    • Department of Electrical and Computer Engineering, VLSI Systems Center, Beersheba, Israel

Image Sensor

• sensor_type: CMOS
• resolution: 32x32 pixels
• dynamic_range: up to 97 dB
• pixel_size: 18 μm
• dark_current: N/A

Optical Data

• focal_length: N/A
• aperture: N/A
• field_of_view: N/A
• distortion: N/A

Performance Metrics

• frame_rate: up to 1000 fps
• signal_to_noise_ratio: N/A
• sensitivity: N/A
• shutter_speed: N/A
• power_consumption: 23 nW at 8 bit DR expansion at room light level; 29 nW at high illumination level
• noise: 1.46 mV (reset noise), 1.15 mV (shot noise)

Applications & Benefits

• cell_imaging: N/A
• benefits: Snapshot image acquisition with extended dynamic range and low power consumption.

Supporting Organizations

• supported_by: MOSIS (TSMC 0.35 process)

Manuscript Details

• publication_date: Feb. 2009

Relevancy Score

• score: 9
• missing_fields:
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • quantum_efficiency
  • readout_speed

Processed JSON Filename

request_3b21f757-96bc-4290-b5a6-e211141191b1-a_snapshot_cmos_image_sensor_with_extended_dynamic_range.json