A Smallarea And Energyefficient 12Bit Saadc With Residue Sampling And
Digital Calibration For Cmos Image Sensors
- doi: 10.1109/TCSII.2015.2457812
-
title: A Small-Area and Energy-Efficient 12-bit SA-ADC
With Residue Sampling and Digital Calibration for CMOS Image Sensors
- publisher: IEEE
- isbn:
- issn: 1558-3791
- rank: 922
- access_type: LOCKED
- content_type: Journals
-
abstract: This brief proposes a small-area and
energy-efficient 12-bit successive approximation analog-to-digital
converter (SA-ADC) for CMOS image sensors with a column-parallel readout
structure. The proposed SA-ADC, which uses only a 6-bit capacitor
digital-to-analog converter (DAC) for residue sampling, reduces the
capacitor area to 1/64th of that for the 12-bit capacitor DAC and adopts
the scaled reference voltages for 12-bit conversion. It also achieves
88% lower switching energy of the capacitor DAC compared with the 12-bit
SA-ADC with split capacitor structure. A foreground digital calibration
is employed to compensate for the linearity error caused by the
inaccurately scaled reference voltages. A test chip, which has 100
readout channels with the proposed SA-ADC, is fabricated using a 0.18-μm
CMOS process. The measurement results show that the proposed SA-ADC with
the proposed digital calibration has differential nonlinearity (DNL) of
-0.8/+1.7 LSB and integral nonlinearity (INL) of -2.3/+2.4 LSB, and
without the calibration, it has DNL of -1/+14.9 LSB and INL of
-15.8/+12.7 LSB. In addition, a digital correlated double sampling
method improves the standard deviation of the readout channel outputs
from 62.1 to 1.4 LSB.
- article_number: 7161297
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7161297
-
html_url:
https://ieeexplore.ieee.org/document/7161297/
-
abstract_url:
https://ieeexplore.ieee.org/document/7161297/
-
publication_title: IEEE Transactions on Circuits and
Systems II: Express Briefs
- conference_location:
- conference_dates:
- publication_number: 8920
- is_number: 7277159
- publication_year: 2015
- publication_date: Oct. 2015
- start_page: 932
- end_page: 936
- citing_paper_count: 6
- citing_patent_count: 0
- download_count: 1257
- insert_date: 20150717
-
index_terms:
-
ieee_terms:
- Capacitors
- Calibration
- Voltage control
- Linearity
- Switches
- Semiconductor device measurement
- Circuits and systems
-
author_terms:
- CMOS image sensor
- column-parallel readout
- foreground digital calibration
- successive approximation ADC
- CMOS image sensor (CIS)
- column-parallel readout
- foreground digital calibration
-
successive approximation analog-to-digital converter (SA-ADC)
-
dynamic_index_terms:
- Residual Samples
- Residues In Samples
- Digital Calibration
- Successive-approximation Analog-to-digital Converter
- Sampling Method
- Analog-to-digital Converter
- Analog-to-digital
- Digital-to-analog Converter
- Linear Error
- CMOS Process
- Switching Energy
- Test Chip
- Power Consumption
- Fast Fourier Transform
- Inverse Fast Fourier Transform
- Figure Of Merit
- Low Conversion
- Least Significant Bit
- Low Bit
- Metal-insulator-metal
- Metal Insulator
- Conversion Step
- Number Of Capacitors
-
authors:
-
Author Name: Min-Kyu Kim
Affiliation: Department of Electronics and Computer
Engineering, Hanyang University, Seoul, Korea
Author URL:
https://ieeexplore.ieee.org/author/37349829800
ID: 37349829800
Order: 1
Author Affiliations:
-
Department of Electronics and Computer Engineering, Hanyang
University, Seoul, Korea
-
Author Name: Seong-Kwan Hong
Affiliation: Department of Electronics and Computer
Engineering, Hanyang University, Seoul, Korea
Author URL:
https://ieeexplore.ieee.org/author/37085359277
ID: 37085359277
Order: 2
Author Affiliations:
-
Department of Electronics and Computer Engineering, Hanyang
University, Seoul, Korea
-
Author Name: Oh-Kyong Kwon
Affiliation: Department of Electronics and Computer
Engineering, Hanyang University, Seoul, Korea
Author URL:
https://ieeexplore.ieee.org/author/37276791400
ID: 37276791400
Order: 3
Author Affiliations:
-
Department of Electronics and Computer Engineering, Hanyang
University, Seoul, Korea
Image Sensor
- sensor_type: CMOS
- resolution: not specified in the text
- dynamic_range: not specified in the text
- pixel_size: not specified in the text
- dark_current: not specified in the text
Optical Data
- focal_length: not specified in the text
- aperture: not specified in the text
- field_of_view: not specified in the text
- distortion: not specified in the text
Performance Metrics
- frame_rate: not specified in the text
- signal_to_noise_ratio: not specified in the text
- sensitivity: not specified in the text
- shutter_speed: not specified in the text
- power_consumption: 14.4 μW
- noise: 112.2 μV (input-referred noise)
Applications & Benefits
- cell_imaging: not specified in the text
-
benefits: suitable for high-speed high-frame CMOS image
sensors with column-parallel readout structure.
Supporting Organizations
- supported_by: SK Hynix Semiconductor Inc.
Manuscript Details
- publication_date: Oct. 2015
Relevancy Score
- score: 8
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- noise
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