A Simulationbased Study Of Backilluminated Lateral Gegesnge Photodetectors On Si Platform For Midinfrared Image Sensing

• doi: 10.1109/TED.2023.3242929
• title: A Simulation-Based Study of Back-Illuminated Lateral Ge/GeSn/Ge Photodetectors on Si Platform for Mid-Infrared Image Sensing
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 915
• access_type: LOCKED
• content_type: Journals
• abstract: GeSn/Ge heterojunction photodetectors (PDs) have great potential to outperform conventional mid-infrared (MIR) sensors. In this work, simulated analysis is performed to demonstrate the back-illuminated lateral double $\text {Ge/}{\text {Ge}}_{{0.90}}{\text {Sn}}_{{0.10}}\text {/Ge}$ heterojunctions p-i-n PDs for MIR imaging. This lateral PDs configuration is compatible with current complementary metal–oxide–semiconductor (CMOS) technology, yielding reduced fabrication complexity and offering high resonance in optical characteristics (between 2000- and 2700-nm wavelength range), viable for high-performance operation in MIR wavelength bands. This work also investigates the effects of high-density point dislocation at GeSn/Ge heterointerface on various performance metrics, including dark current, photocurrents, detectivity, and noise-equivalent-power (NEP) of PDs. The results indicate that the defects have less impact on detectivity and NEP and have negligible impact on the collection of photogenerated carriers and thus responsivity. The device shows a maximum 3-dB optoelectrical bandwidth of $>$ 92.4 GHz, which is among the highest of other GeSn p-i-n PDs. In addition, even in the presence of defects, the device achieves high responsivity in MIR bands and its values are 0.39, 1.45, and 0.25 A/W at the operating wavelengths of 2000, 2310, and 2700 nm, respectively. Thus, the proposed work can be a major step toward GeSn-based PDs on the Si platform for MIR imaging applications.
• article_number: 10049397
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10049397
• html_url: https://ieeexplore.ieee.org/document/10049397/
• abstract_url: https://ieeexplore.ieee.org/document/10049397/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 10081247
• publication_year: 2023
• publication_date: April 2023
• start_page: 1721
• end_page: 1727
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 742
• insert_date: 20230222
• index_terms:
  • ieee_terms:
    • Germanium
    • PIN photodiodes
    • Heterojunctions
    • Sensors
    • Optical imaging
    • Optical device fabrication
    • Silicon
  • author_terms:
    • Back-illumination
    • defects
    • GeSn
    • heterojunctions
    • imaging
    • mid-infrared
    • photodetectors (PDs)
  • dynamic_index_terms:
    • Si Platform
    • Photocurrent
    • Negligible Impact
    • Dark Current
    • High Performance
    • Response Values
    • Series Resistance
    • Electron Hole Pairs
    • Spectral Response
    • Optical Response
    • Thermal Annealing
    • Effect Of Defects
    • Consequence Of Defects
    • Fault Event
    • Incident Power
    • Parasitic Capacitance
    • Molecular Beam Epitaxy
    • Molecular-beam Epitaxy
    • Passive Devices
    • Photonic Integrated Circuits
    • Integrated Optics
    • Photonic Chip
    • Minority Carrier
    • Shunt Resistance
    • Responsivity Of The Photodetector
    • Response Of The Photodetector
    • Multiple Quantum Wells
    • Multiple-quantum-well
    • Distributed Bragg Reflector
    • Sn Content
    • Cut-off Wavelength
    • Cutoff Wavelengths
    • Active Layer
    • Carrier Lifetime
    • Finite Element Method
    • Finite Element Methods
    • Finite-element Method
    • Resonant Cavity
    • Ring Cavity
    • Lattice Mismatch
• authors:
  • Author Name: Harshvardhan Kumar
    Affiliation: Department of Electronics and Communication Engineering, LNM Institute of Information Technology, Rajasthan, Jaipur, India
    Author URL: https://ieeexplore.ieee.org/author/37086489179
    ID: 37086489179
    Order: 1
    Author Affiliations:
    • Department of Electronics and Communication Engineering, LNM Institute of Information Technology, Rajasthan, Jaipur, India
  • Author Name: Ankit Kumar Pandey
    Affiliation: Department of Electronics and Communication Engineering, Greater Noida, Bennett University, Uttar Pradesh, India
    Author URL: https://ieeexplore.ieee.org/author/37086036460
    ID: 37086036460
    Order: 2
    Author Affiliations:
    • Department of Electronics and Communication Engineering, Greater Noida, Bennett University, Uttar Pradesh, India

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly stated
• dynamic_range: Not explicitly stated
• pixel_size: Not explicitly stated
• dark_current: <218 nA under -1 V (dark current density <10^-4 A/cm^2)

Optical Data

• focal_length: Not explicitly stated
• aperture: Not explicitly stated
• field_of_view: Not explicitly stated
• distortion: Not explicitly stated

Performance Metrics

• frame_rate: Not explicitly stated
• signal_to_noise_ratio: Not explicitly stated
• sensitivity: Not explicitly stated
• shutter_speed: Not explicitly stated
• power_consumption: Not explicitly stated
• noise: Not explicitly stated

Applications & Benefits

• cell_imaging: Applicable in integrated MIR cameras for smart mobile electronics, automotive night-vision systems, and surveillance cameras.
• benefits: The device can function in a wider spectral range (2000 to 2700 nm) and has a high responsivity even in the presence of defects.

Supporting Organizations

• supported_by: Not explicitly stated

Manuscript Details

• publication_date: April 2023

Relevancy Score

• score: 7
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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