A Sensitivity And Linearity Improvement Of A 100Db Dynamic Range Cmos Image Sensor Using A Lateral Overflow Integration Capacitor

• doi: 10.1109/JSSC.2006.870753
• title: A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 1279
• access_type: LOCKED
• content_type: Journals
• abstract: In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in nonsaturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. The floating diffusion capacitance of the CMOS image sensor is as small as that of a four transistors type CMOS image sensor because the lateral overflow integration capacitor is located next to the reset switch. A 1/3-inch VGA format (640/sup H//spl times/480/sup V/ pixels), 7.5/spl times/7.5 /spl mu/m/sup 2/ pixel color CMOS image sensor fabricated through 0.35-/spl mu/m two-poly three-metal CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.
• article_number: 1610629
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1610629
• html_url: https://ieeexplore.ieee.org/document/1610629/
• abstract_url: https://ieeexplore.ieee.org/document/1610629/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 33823
• publication_year: 2006
• publication_date: April 2006
• start_page: 851
• end_page: 858
• citing_paper_count: 110
• citing_patent_count: 6
• download_count: 3094
• insert_date: 20060327
• index_terms:
  • ieee_terms:
    • Linearity
    • Dynamic range
    • CMOS image sensors
    • Capacitors
    • Pixel
    • Switches
    • Photodiodes
    • Circuits
    • Capacitance
    • Color
  • author_terms:
    • CMOS image sensor
    • dynamic range
    • linearity
    • sensitivity
  • dynamic_index_terms:
    • Dynamic Range
    • Improvement In Sensitivity
    • Image Sensor
    • Camera Sensor
    • Integration Capacitor
    • Lateral Overflow
    • Lateral Overflow Integration Capacitor
    • Photodiode
    • Photoelectron
    • Photoelectric
    • Output Signal
    • Low Light
    • Signaling Dynamics
    • Voltage Levels
    • Voltage Variation
    • Noise Components
    • Linear Signal
    • Residual Noise
    • Switching Point
    • Extensive Dynamics
    • Signal Subtraction
    • Chip Size
    • Saturation Voltage
    • S1 Region
    • Voltage Noise
    • Noise Reduction Method
    • Noise Correction
    • Capacitance Ratio
    • Signal Improvement
    • Bright Light
• authors:
  • Author Name: N. Akahane
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296244800
    ID: 37296244800
    Order: 1
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: S. Sugawa
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37284703100
    ID: 37284703100
    Order: 2
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: S. Adachi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37302012300
    ID: 37302012300
    Order: 3
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: K. Mori
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088868065
    ID: 37088868065
    Order: 4
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: T. Ishiuchi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37427321900
    ID: 37427321900
    Order: 5
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: K. Mizobuchi
    Affiliation: Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296247800
    ID: 37296247800
    Order: 6
    Author Affiliations:
    • Texas Instruments Japan Limited, Ibaraki, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 640x480
• dynamic_range: 100 dB
• pixel_size: 4.5 µm
• dark_current: 0.15 mV (random noise)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps
• sensitivity: Increased by 1.2 times compared to FD reset type sensor
• power_consumption: 65 mW
• noise: 0.15 mV (fixed pattern noise)

Applications & Benefits

• cell_imaging: High-quality wide dynamic range image sensing
• benefits: Improved sensitivity and linearity in images, high S/N ratio, ideal linearity even in saturated regions

Supporting Organizations

• supported_by: Texas Instruments Japan, Tohoku University

Manuscript Details

• publication_date: April 2006

Relevancy Score

• score: 10

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