A Review Of Cmos Photodiode Modeling And The Role Of The Lateral
Photoresponse
- doi: 10.1109/TED.2015.2446204
-
title: A Review of CMOS Photodiode Modeling and the
Role of the Lateral Photoresponse
- publisher: IEEE
- isbn:
- issn: 1557-9646
- rank: 905
- access_type: LOCKED
- content_type: Journals
-
abstract: The CMOS photodiode is the primary
photosensing device used in solid-state image sensors. A review of
significant CMOS photodiode models that can be found in the literature
in recent years is presented here. We have focused on photocurrent
models in one, two, and three dimensions, paying special attention to
lateral current components. Lateral collection, particularly for small
devices fabricated in deep submicrometer technologies, has been shown to
be of utmost importance. Finally, several models to account for
crosstalk effects are also described.
- article_number: 7152895
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7152895
-
html_url:
https://ieeexplore.ieee.org/document/7152895/
-
abstract_url:
https://ieeexplore.ieee.org/document/7152895/
-
publication_title: IEEE Transactions on Electron
Devices
- conference_location:
- conference_dates:
- publication_number: 16
- is_number: 7365508
- publication_year: 2016
- publication_date: Jan. 2016
- start_page: 16
- end_page: 25
- citing_paper_count: 12
- citing_patent_count: 0
- download_count: 1455
- insert_date: 20150708
-
index_terms:
-
ieee_terms:
- Photodiodes
- Semiconductor device modeling
- Mathematical model
- CMOS integrated circuits
- Analytical models
- Integrated circuit modeling
- Photoconductivity
-
author_terms:
- CMOS photodiode
- crosstalk
- lateral current
- modeling
- simulation.
- CMOS photodiode
- crosstalk
- lateral current
- modeling
- simulation
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Crosstalk Effects
- Solid-state Sensors
- Numerical Simulations
- Numerical Model
- Active Area
- 2D Model
- Diffusion Equation
- Total Current
- Depletion Region
- Space Charge Region
- Depletion Layer
- Depletion Zone
- Electrical Components
- Optical Components
- P-n Junction
- CMOS Technology
- Circuit Simulation
- Lateral Diffusion
- Compact Model
- CMOS Process
- Modulation Transfer Function
- Optical Transfer Function
- Minority Carrier
- Device Simulation
- Semi-analytical Model
- PIN Photodiode
- Lateral Structures
- Steady-state Equation
- Quantum Efficiency
- Reference Pixels
- Standard CMOS
- Maximum Response
- Fourier Series
- Fourier Decomposition
- Fourier Modes
- Fourier Expansion
- Sensor Pixel
-
authors:
-
Author Name: Beatriz Blanco-Filgueira
Affiliation: Centro de Investigación en Tecnologías
de la Información, University of Santiago de Compostela, Santiago de
Compostela, Spain
Author URL:
https://ieeexplore.ieee.org/author/38276622300
ID: 38276622300
Order: 1
Author Affiliations:
-
Centro de Investigación en Tecnologías de la Información,
University of Santiago de Compostela, Santiago de Compostela,
Spain
-
Author Name: Paula López Martínez
Affiliation: Centro de Investigación en Tecnologías
de la Información, University of Santiago de Compostela, Santiago de
Compostela, Spain
Author URL:
https://ieeexplore.ieee.org/author/37085730616
ID: 37085730616
Order: 2
Author Affiliations:
-
Centro de Investigación en Tecnologías de la Información,
University of Santiago de Compostela, Santiago de Compostela,
Spain
-
Author Name: Juan Bautista Roldán Aranda
Affiliation: Department of Electronics and Computer
Technology, University of Granada, Granada, Spain
Author URL:
https://ieeexplore.ieee.org/author/37085726146
ID: 37085726146
Order: 3
Author Affiliations:
-
Department of Electronics and Computer Technology, University of
Granada, Granada, Spain
Image Sensor
- sensor_type: CMOS
- resolution: Not specified
- dynamic_range: Not specified
- pixel_size: Not specified
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
- cell_imaging: Used in solid-state image sensors.
-
benefits: Improved sensitivity, reduced dark current,
and better quantum efficiency.
Supporting Organizations
-
supported_by: Spanish Ministerio de Ciencia e
Innovación, Agrupación Estratéxica Centro de Investigación en
Tecnologías de la Información, Xunta de Galicia, Consejería Economía,
Innovación, Ciencia y Empleo, Junta de Andalucia.
Manuscript Details
- publication_date: Jan. 2016
Relevancy Score
- score: 10
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
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