A Radiationhardened Cmos Image Sensor With Pixels Exhibiting A Negligibly Small Darklevel Increase During Ionizing Radiation

• doi: 10.1109/TNS.2020.3003333
• title: A Radiation-Hardened CMOS Image Sensor With Pixels Exhibiting a Negligibly Small Dark-Level Increase During Ionizing Radiation
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 895
• access_type: LOCKED
• content_type: Journals
• abstract: Radiation-hardened image sensors have been developed over the last few decades. Most of these studies have examined sensor properties before and after radiation, but few have described images during radiation. We have developed a new type of radiation-hardened pixel and integrated it into a 1.3-Mpixel, 18-bit digital CMOS image sensor. The pixel area incorporates several types of variation, and the sensor was analyzed during 60Co gamma-ray radiation at a rate above 1 kGy/h; the total ionizing dose (TID) was as high as 200 kGy. As a result, one type of pixel showed a negligibly small dark-level increase over the entire period. Conversely, the organic color filters degraded, even at a TID as low as 10 kGy.
• article_number: 9120072
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9120072
• html_url: https://ieeexplore.ieee.org/document/9120072/
• abstract_url: https://ieeexplore.ieee.org/document/9120072/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 9167172
• publication_year: 2020
• publication_date: Aug. 2020
• start_page: 1835
• end_page: 1845
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 609
• insert_date: 20200618
• index_terms:
  • ieee_terms:
    • Dark current
    • Radiation effects
    • Logic gates
    • Silicon
    • Photodiodes
    • Histograms
    • Electric fields
  • author_terms:
    • CMOS image sensors (CISs)
    • color filters (CFs)
    • dark current
    • gamma rays
    • photogate (PG)
    • pinned photodiode (PPD)
    • radiation effects
    • radiation hard
    • total ionizing dose (TID)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Radiation Tolerance
    • Radiation-tolerant
    • Radiation Hardness
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Gamma-ray Irradiation
    • Gamma-ray Radiation
    • Gamma Ray Radiation
    • Gamma Ray Irradiation
    • Types Of Pixels
    • Irradiation
    • Continuous Monitoring
    • Standard Process
    • Quantum Efficiency
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Current Increases
    • Spectral Response
    • Nuclear Power Plant
    • Nuclear Facilities
    • Nuclear Plant
    • Background Radiation
    • Ambient Radiation
    • Radiation Environment
    • Dark Current
    • Carrier Lifetime
    • Radiative Rate
    • Plan View
    • Continuous Irradiation
    • Continuum Radiation
    • Continuous Radiation
    • Silicon Surface
    • PIN Photodiode
    • Readout Circuit
    • Photoelectric Conversion
    • Reset Voltage
    • Oxide Thickness
    • Low Dark Current
    • Drift Region
• authors:
  • Author Name: Takashi Watanabe
    Affiliation: Brookman Technology, Shizuoka, Japan
    Author URL: https://ieeexplore.ieee.org/author/37068458100
    ID: 37068458100
    Order: 1
    Author Affiliations:
    • Brookman Technology, Shizuoka, Japan
  • Author Name: Tomoaki Takeuchi
    Affiliation: Japan Atomic Energy Agency, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085825785
    ID: 37085825785
    Order: 2
    Author Affiliations:
    • Japan Atomic Energy Agency, Ibaraki, Japan
  • Author Name: Osamu Ozawa
    Affiliation: Ikegami Tsushinki, Kawasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37328604200
    ID: 37328604200
    Order: 3
    Author Affiliations:
    • Ikegami Tsushinki, Kawasaki, Japan
  • Author Name: Hirohisa Komanome
    Affiliation: Ikegami Tsushinki, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085825431
    ID: 37085825431
    Order: 4
    Author Affiliations:
    • Ikegami Tsushinki, Tokyo, Japan
  • Author Name: Tomoyuki Akahori
    Affiliation: Brookman Technology, Shizuoka, Japan
    Author URL: https://ieeexplore.ieee.org/author/38071525400
    ID: 38071525400
    Order: 5
    Author Affiliations:
    • Brookman Technology, Shizuoka, Japan
  • Author Name: Kunihiko Tsuchiya
    Affiliation: Japan Atomic Energy Agency, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085825497
    ID: 37085825497
    Order: 6
    Author Affiliations:
    • Japan Atomic Energy Agency, Ibaraki, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 1.3-Mpixel
• dynamic_range: 18-bit
• pixel_size: 7.1μm
• dark_current: less than half that of FP-PD after irradiations of 50 and 70 kGy across pixel types.

Optical Data

• focal_length: not available
• aperture: not available
• field_of_view: not available
• distortion: not available

Performance Metrics

• signal_to_noise_ratio: not mentioned
• sensitivity: not defined
• shutter_speed: not detailed
• power_consumption: not mentioned

Applications & Benefits

• cell_imaging: The CMOS image sensor has low dark current and was designed to operate reliably in high radiation environments, particularly for monitoring in nuclear facilities.
• benefits: A negligibly small dark-level increase under continuous radiation, maintaining performance during ionizing radiation exposure.

Supporting Organizations

• supported_by: Research and Development Program for Plant Safety Enhancement of the Agency for Natural Resources and Energy, Ministry of Economy, Trade and Industry (METI), Japan.

Manuscript Details

• publication_date: Aug. 2020

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_15751543-621e-458c-bd88-7952473a3646-a_radiationhardened_cmos_image_sensor_with_pixels_exhibiting_a_negligibly_small_darklevel_increase_during_ionizing_radiation.json