A Pixelshared Cmos Image Sensor Using Lateral Overflow Gate

• doi: 10.1109/ESSCIRC.2009.5326026
• title: A pixel-shared CMOS image sensor using lateral overflow gate
• publisher: IEEE
• isbn: 978-1-4244-4354-3
• issn: 1930-8833
• partnum: 09EX2870
• rank: 1244
• access_type: LOCKED
• content_type: Conferences
• abstract: A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-mum, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H times 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-muV/e- and a high full well capacity of 6.9 times 104-e- in spite of its pixel size of 3.0 times 3.0-mum2.
• article_number: 5326026
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5326026
• html_url: https://ieeexplore.ieee.org/document/5326026/
• abstract_url: https://ieeexplore.ieee.org/document/5326026/
• publication_title: 2009 Proceedings of ESSCIRC
• conference_location: Athens, Greece
• conference_dates: 14-18 Sept. 2009
• publication_number: 5307451
• is_number: 5325915
• publication_year: 2009
• publication_date: 14-18 Sept. 2009
• start_page: 240
• end_page: 243
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 1188
• insert_date: 20091110
• index_terms:
  • ieee_terms:
    • Pixel
    • CMOS image sensors
    • Photodiodes
    • CMOS technology
    • Optical filters
    • Capacitors
    • CMOS process
    • Optical device fabrication
    • Optical sensors
    • Color
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Lateral Gate
    • Lateral Overflow
    • Pixel Size
    • Conversion Gain
    • PIN Photodiode
    • Photoelectron
    • Photoelectric
    • Shift Register
    • Reset Voltage
    • Switching Transistors
• isbn_formats:
  • format: Print ISBN, value: 978-1-4244-4354-3, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-4355-0, isbnType: New-2005
• authors:
  • Author Name: Shin Sakai
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37411486800
    ID: 37411486800
    Order: 1
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Yoshiaki Tashiro
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37396692800
    ID: 37396692800
    Order: 2
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Nana Akahane
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296244800
    ID: 37296244800
    Order: 3
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
    • DISP Development, Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Rihito Kuroda
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37294742300
    ID: 37294742300
    Order: 4
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan
  • Author Name: Koichi Mizobuchi
    Affiliation: DISP Development, Texas Instruments Japan Limited, Ibaraki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37296247800
    ID: 37296247800
    Order: 5
    Author Affiliations:
    • DISP Development, Texas Instruments Japan Limited, Ibaraki, Japan
  • Author Name: Shigetoshi Sugawa
    Affiliation: Graduate School of Engineering, University of Tohoku, Sendai, Japan
    Author URL: https://ieeexplore.ieee.org/author/37284703100
    ID: 37284703100
    Order: 6
    Author Affiliations:
    • Graduate School of Engineering, University of Tohoku, Sendai, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 1280H x 960V
• dynamic_range: 90-dB
• pixel_size: 3.0 x 3.0 µm2
• dark_current: 2.4 e- (total), 1.5 e- (column)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• sensitivity: 84 µV/e-
• noise: 2.4 e- (total), 1.5 e- (column)

Applications & Benefits

• cell_imaging: not specified
• benefits: High sensitivity and high full well capacity in a small pixel size.

Supporting Organizations

• supported_by: Tohoku University, Texas Instruments Japan

Manuscript Details

• publication_date: 14-18 Sept. 2009

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • shutter_speed
  • power_consumption
  • cell_imaging
  • benefits

Processed JSON Filename

request_1f6d76a0-c325-41a1-922d-57026a7df9e5-a_pixelshared_cmos_image_sensor_using_lateral_overflow_gate.json