A Numerical Analysis Of A Cmos Image Sensor With A Simple
Fixedpatternnoisereduction Technology
- doi: 10.1109/16.998580
-
title: A numerical analysis of a CMOS image sensor with
a simple fixed-pattern-noise-reduction technology
- publisher: IEEE
- isbn:
- issn: 1557-9646
- rank: 1230
- access_type: LOCKED
- content_type: Journals
-
abstract: A 1/3-in 640/spl times/480-pixel CMOS image
sensor with a simple fixed-pattern noise-reduction technology with a
five-transistor pixel circuit and a low input-voltage current-voltage
(I-V) converter was previously developed. In this report, we show that
the low-input-voltage I-V converter with a current-mirror circuit
improves the amplification factor and linearity of the pixel circuit. In
a five-transistor pixel circuit, the threshold voltage of the X-Y
addressing transistor affects the amplitude and the level of the readout
pulse. An analysis of the mechanism of the X-Y addressing transistor
shows the basic concept behind the selection of the threshold voltage.
An L-shaped readout gate for a pinned photodiode is compared with a
straight readout gate, and is proved to be adequate for rapid charge
transfer.
- article_number: 998580
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=998580
-
html_url:
https://ieeexplore.ieee.org/document/998580/
-
abstract_url:
https://ieeexplore.ieee.org/document/998580/
-
publication_title: IEEE Transactions on Electron
Devices
- conference_location:
- conference_dates:
- publication_number: 16
- is_number: 21545
- publication_year: 2002
- publication_date: May 2002
- start_page: 746
- end_page: 753
- citing_paper_count: 10
- citing_patent_count: 4
- download_count: 738
- insert_date: 20020807
-
index_terms:
-
ieee_terms:
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Threshold Voltage
- PIN Photodiode
- Signal-to-noise
- Signal-to-noise Ratio
- Electrostatic Potential
- Electric Potential
- Low Voltage
- Output Signal
- Transient State
- Transient Process
- Transient System
- Transient Conditions
- Transient Analysis
- Input Voltage
- Pulse Amplitude
- Dark Current
- Voltage Mode
- Circuit Simulation
- Circuit Current
- Linear Signal
- Efficient Charge Transfer
- Differential Amplifier
- Device Simulation
- Complete Transfer
- Power Supply Voltage
- Circuit Configuration
- Signal Gain
- Good Linearity
- Drain-source Voltage
- Source-drain Voltage
- Current Mirror
-
authors:
-
Author Name: K. Yonemoto
Affiliation: Department of Electronics, Information
and Communication Engineering, Waseda University, Tokyo, Japan
Author URL:
https://ieeexplore.ieee.org/author/37372301500
ID: 37372301500
Order: 1
Author Affiliations:
-
Department of Electronics, Information and Communication
Engineering, Waseda University, Tokyo, Japan
-
Author Name: H. Sumi
Affiliation: Micro-System Department, Imaging
Device Company, SNC, Sony Corporation, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37275548900
ID: 37275548900
Order: 2
Author Affiliations:
-
Micro-System Department, Imaging Device Company, SNC, Sony
Corporation, Kanagawa, Japan
Image Sensor
- sensor_type: CMOS
- resolution: 640x480
- dynamic_range: Not specified
- pixel_size: Not specified
- dark_current: 150 pA/cm²
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
- frame_rate: 30 fps
- sensitivity: 0.52 V/lx·s
- power_consumption: 31 mW
- noise: 0.18 mV
Applications & Benefits
-
cell_imaging: Used in mobile applications and digital
still cameras.
-
benefits: Lower power consumption, smaller chip size
due to lack of column CDS circuits, capability for system-on-chip
integration.
Supporting Organizations
- supported_by: Sony Corporation
Manuscript Details
- publication_date: May 2002
Relevancy Score
- score: 10
-
missing_fields:
- dynamic_range
- fill factor
- quantum efficiency
- readout speed
- noise sources
- analog-to-digital conversion techniques
- microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
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