A Multiple Operation Mode Cmos Digital Pixel Sensor Dedicated To A Visual
Cortical Implant
- doi: 10.1109/MWSCAS.2004.1354004
-
title: A multiple operation mode CMOS digital pixel
sensor dedicated to a visual cortical implant
- publisher: IEEE
- isbn: 0-7803-8346-X
- issn:
- partnum: 04CH37540
- rank: 1181
- access_type: LOCKED
- content_type: Conferences
-
abstract: A CMOS image sensor with pixel level analog
to digital conversion is presented. The circuit of each pixel contains a
photodiode, with a fill factor of 21%, a shutter/follower, a comparator
and a storing unit, for a total of 44 transistors. The comparator uses
the maximum voltage swing available and is insensitive to fabrication
process variations. A digital to analog converter is used to deliver a
voltage reference in order to compare it with the pixel voltage for the
analog to digital conversion. The digital value of the pixel voltage is
stored in an 8-bit DRAM. The circuit can operate in one of the three
following modes: logarithmic, linear integration or differential. The
first two modes are used for image capture and the third mode is used
for an active range finder system. All these modes are required by a
visual cortical implant. The circuit layout of a pixel is being
fabricated in CMOS 0.18 /spl mu/m technology, and a matrix of 45/spl
times/90 pixels was submitted for fabrication.
- article_number: 1354004
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1354004
-
html_url:
https://ieeexplore.ieee.org/document/1354004/
-
abstract_url:
https://ieeexplore.ieee.org/document/1354004/
-
publication_title: The 2004 47th Midwest Symposium on
Circuits and Systems, 2004. MWSCAS '04.
- conference_location: Hiroshima, Japan
- conference_dates: 25-28 July 2004
- publication_number: 9366
- is_number: 29746
- publication_year: 2004
- publication_date: 25-28 July 2004
- start_page: I
- end_page: 369
- citing_paper_count: 5
- citing_patent_count: 0
- download_count: 163
- insert_date: 20041115
-
index_terms:
-
ieee_terms:
- Implants
- Voltage
- Circuits
- CMOS image sensors
- Analog-digital conversion
- Fabrication
- CMOS technology
- Pixel
- Photodiodes
- Digital-analog conversion
-
dynamic_index_terms:
- Operation Mode
- Digital Sensor
- Sensor Pixel
- Digital Pixel
- Cortical Implants
- Scan Range
- Photodiode
- Analog-to-digital Converter
- Analog-to-digital
- Digital-to-analog Converter
- Image Sensor
- Camera Sensor
- Voltage Values
- Digital Value
- Linear Integration
- Signal-to-noise
- Signal-to-noise Ratio
- Time And Space
- Spacetime
- Function Of Time
- Dynamic Range
- System Architecture
- Inverter
- Photocurrent
- Differential Modulation
- Modulation Of Differentiation
- Comparable Yields
- Comparator Output
- Comparison Of Yield
- Comparison Of Outputs
- Pixel Spacing
- Pixel Time
- Time For Each Pixel
- Consecutive Images
- Linear Mode
- Linear Transition
- Ambient Light
- Gate Electrode
- Current Mirror
-
isbn_formats:
-
format: Print ISBN,
value: 0-7803-8346-X,
isbnType: Historical
-
authors:
-
Author Name: A. Trepanier
Affiliation: PolyStim Neurotechnologies Laboratory,
Department of Electrical Engineering, École Polytechnique de
Montréal, QUE, Canada
Author URL:
https://ieeexplore.ieee.org/author/37281574300
ID: 37281574300
Order: 1
Author Affiliations:
-
PolyStim Neurotechnologies Laboratory, Department of Electrical
Engineering, École Polytechnique de Montréal, QUE, Canada
-
Author Name: J.-L. Trepanier
Affiliation: PolyStim Neurotechnologies Laboratory,
Department of Electrical Engineering, École Polytechnique de
Montréal, QUE, Canada
Author URL:
https://ieeexplore.ieee.org/author/38185010200
ID: 38185010200
Order: 2
Author Affiliations:
-
PolyStim Neurotechnologies Laboratory, Department of Electrical
Engineering, École Polytechnique de Montréal, QUE, Canada
-
Author Name: M. Sawan
Affiliation: PolyStim Neurotechnologies Laboratory,
Department of Electrical Engineering, École Polytechnique de
Montréal, QUE, Canada
Author URL:
https://ieeexplore.ieee.org/author/37276702600
ID: 37276702600
Order: 3
Author Affiliations:
-
PolyStim Neurotechnologies Laboratory, Department of Electrical
Engineering, École Polytechnique de Montréal, QUE, Canada
-
Author Name: Y. Audet
Affiliation: PolyStim Neurotechnologies Laboratory,
Department of Electrical Engineering, École Polytechnique de
Montréal, QUE, Canada
Author URL:
https://ieeexplore.ieee.org/author/37273900300
ID: 37273900300
Order: 4
Author Affiliations:
-
PolyStim Neurotechnologies Laboratory, Department of Electrical
Engineering, École Polytechnique de Montréal, QUE, Canada
Image Sensor
- sensor_type: CMOS
- resolution: 45x90 pixels
- dynamic_range: Not specified in the text
- pixel_size: 16µm x 16µm
- dark_current: Not specified in the text
Optical Data
- focal_length: Not specified in the text
- aperture: Not specified in the text
- field_of_view: Not specified in the text
- distortion: Not specified in the text
Performance Metrics
- frame_rate: up to 5000 frames/s
- signal_to_noise_ratio: Not specified in the text
- sensitivity: Not specified in the text
- shutter_speed: Not specified in the text
- power_consumption: Not specified in the text
- noise: Not specified in the text
Applications & Benefits
-
cell_imaging: Utilized in visual cortical implants to
create artificial vision for the blind
-
benefits: Supports multiple operation modes for
applications requiring wide dynamic range and active range finding.
Supporting Organizations
-
supported_by: NSERC, Canadian Microelectronics
Corporation
Manuscript Details
- publication_date: 25-28 July 2004
Relevancy Score
- score: 10
-
missing_fields:
- quantum efficiency
- readout speed
- noise sources
- analog-to-digital conversion techniques
- use of microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
Processed JSON Filename
request_096ed0b3-c491-482e-b257-51383d10667b-a_multiple_operation_mode_cmos_digital_pixel_sensor_dedicated_to_a_visual_cortical_implant.json