A Monolithically Integrated 640 512 Cmosperovskite Image Sensor

• doi: 10.1109/ESSERC62670.2024.10719487
• title: A Monolithically Integrated 640 × 512 CMOS-Perovskite Image Sensor
• publisher: IEEE
• isbn: 979-8-3503-8814-5
• issn: 1930-8833
• rank: 831
• access_type: LOCKED
• content_type: Conferences
• abstract: The demand for enhanced imager sensing drives innovation in fabrication and device schemes through the integration of new materials. Despite the dominance of CMOS in signal processing, improved image sensing relies on effectively integrating novel photo-absorption materials with CMOS chips. Perovskite films, renowned for their exceptional optoelectronic properties, offer a viable alternative to silicon in photodetectors. So far, the absence of full integration with CMOS IC technology, coupled with the reliance on external readout mechanisms, has not only limited the potential for miniaturization but also impacted cost efficiency. This presents a major bottleneck in the development of photodetector arrays based on perovskite films. Here, we demonstrate a heterogeneous integration architecture that achieves the monolithic integration of perovskite pixels with CMOS IC in an efficient and cost-effective fabrication approach, utilizing a global electrode structure. A $640 \times 512$ CMOS-perovskite image sensor is presented. The architecture and fabrication process are distinguished by their cost-effectiveness, efficiency in terms of time and labor, ease of operation and scalability for mass production. This heterogeneous chip achieves a functional pixel density of $\mathbf{9 8. 7 \%}$ and the max signal-to-noise ratio (SNR) of 48.5 dB. The monolithic integration of perovskite film with CMOS IC demonstrated is unfolding the vision for the next generation of high-performance image sensors.
• article_number: 10719487
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10719487
• html_url: https://ieeexplore.ieee.org/document/10719487/
• abstract_url: https://ieeexplore.ieee.org/document/10719487/
• publication_title: 2024 IEEE European Solid-State Electronics Research Conference (ESSERC)
• conference_location: Bruges, Belgium
• conference_dates: 9-12 Sept. 2024
• publication_number: 10719398
• is_number: 10719399
• publication_year: 2024
• publication_date: 9-12 Sept. 2024
• start_page: 213
• end_page: 216
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 467
• insert_date: 20241023
• index_terms:
  • ieee_terms:
    • Fabrication
    • Image sensors
    • Technological innovation
    • Films
    • Monolithic integrated circuits
    • Perovskites
    • Photodetectors
    • Silicon
    • Sensors
    • Signal to noise ratio
  • author_terms:
    • Perovskite
    • Monolithic Integration
    • Image Sensor
    • CMOS
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Electrode
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Fabrication Process
    • Photodetector
    • Perovskite Films
    • Integration Of Materials
    • Heterogeneous Integration
    • Multichip Module
    • Spin-coated
    • Precursor Solution
    • Halide Perovskites
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 979-8-3503-8814-5, isbnType: New-2005
  • format: USB ISBN, value: 979-8-3503-8812-1, isbnType: New-2005
  • format: Electronic ISBN, value: 979-8-3503-8813-8, isbnType: New-2005
• authors:
  • Author Name: Xiaochen Wang
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/913142689169708
    ID: 913142689169708
    Order: 1
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Hao Ning
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37089620738
    ID: 37089620738
    Order: 2
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Guangcai Hu
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37086016673
    ID: 37086016673
    Order: 3
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Yunlong Li
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37858051600
    ID: 37858051600
    Order: 4
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Yongliang Xie
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37307955200
    ID: 37307955200
    Order: 5
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Jiangming Lin
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/789163236742958
    ID: 789163236742958
    Order: 6
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Cheng Zhuo
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37090056727
    ID: 37090056727
    Order: 7
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Srikrishna Chanakya Bodepudi
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/38234487300
    ID: 38234487300
    Order: 8
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Yong Wang
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37085907438
    ID: 37085907438
    Order: 9
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Bin Yu
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37535092700
    ID: 37535092700
    Order: 10
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
  • Author Name: Yang Xu
    Affiliation: College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/38667267800
    ID: 38667267800
    Order: 11
    Author Affiliations:
    • College of Integrated Circuits, ZJU-HIC, State Key Laboratory of Silicon and Advanced Semiconductor Material, Zhejiang University, Hangzhou, China

Image Sensor

• sensor_type: CMOS
• resolution: 640 × 512
• dynamic_range: 48.5 dB
• pixel_size: 15 μm × 15 μm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• signal_to_noise_ratio: 48.5 dB
• power_consumption: 80 mW

Applications & Benefits

• cell_imaging: Not specified
• benefits: Cost-effective processing and heterogeneous compatibility, ideal for large-scale production.

Supporting Organizations

• supported_by: Zhejiang University, National Key Research and Development Program of China, Zhongxin Science and Technology Co. Ltd.

Manuscript Details

• publication_date: 9-12 Sept. 2024

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_7651b7ba-2d39-4c8a-b6d9-aef3345c2263-a_monolithically_integrated_640__512_cmosperovskite_image_sensor.json