A Lowripple Charge Pump With Novel Compensator For Transientresponse Improvement In Cmos Image Sensors

• doi: 10.1109/TCSII.2020.3033000
• title: A Low-Ripple Charge Pump With Novel Compensator for Transient-Response Improvement in CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 1558-3791
• rank: 815
• access_type: LOCKED
• content_type: Journals
• abstract: This brief presents a low-ripple, fully-integrated, linear-regulated charge pump with transient-response improvement for CMOS image sensors. A compensator is proposed to accelerate the recovery of the output when an undershoot occurs. The regulated charge pump is designed with 0.11 μm 1-poly 4-metal CMOS process and occupies an area of 0.073 mm2. According to the post-layout simulation, the worst steady-state ripple is 0.95 mVPP and the recovery time (99.9%) of the regulated output is 155 ns when the undershoot is 114 mV. The application of the compensator leads to a 78% decrease on the recovery time. When achieving similar recovery time, the area cost of the proposed topology is reduced by 49% compared to the traditional method of increasing filter capacitance. The total power dissipation of the charge pump is 1.476 mW, and the compensator only consumes 28 μW.
• article_number: 9236646
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9236646
• html_url: https://ieeexplore.ieee.org/document/9236646/
• abstract_url: https://ieeexplore.ieee.org/document/9236646/
• publication_title: IEEE Transactions on Circuits and Systems II: Express Briefs
• conference_location:
• conference_dates:
• publication_number: 8920
• is_number: 9387428
• publication_year: 2021
• publication_date: April 2021
• start_page: 1113
• end_page: 1117
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 1608
• insert_date: 20201022
• index_terms:
  • ieee_terms:
    • Regulators
    • Charge pumps
    • Voltage control
    • Transient response
    • Switches
    • Capacitors
    • Clocks
  • author_terms:
    • CMOS image sensor
    • charge pump
    • low dropout regulator
    • small ripple
    • transient response
  • dynamic_index_terms:
    • Transient Response
    • Charge Pump
    • Charge-pump
    • Recovery Time
    • Simulation Results
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Time Of Discharge
    • Supply Voltage
    • Traditional Design
    • Total Capacitance
    • Voltage Ripple
    • Charge Redistribution
    • Low Dropout
    • Monte Carlo Simulation Results
    • Monte-Carlo Simulation Results
    • Gain Bandwidth
    • Gain Bandwidths
    • Output Voltage Ripple
• authors:
  • Author Name: Jing Gao
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38239776100
    ID: 38239776100
    Order: 1
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Tianyu Gu
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37088814518
    ID: 37088814518
    Order: 2
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Kaiming Nie
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085670429
    ID: 37085670429
    Order: 3
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Zhiyuan Gao
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085495653
    ID: 37085495653
    Order: 4
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Jiangtao Xu
    Affiliation: School of Microelectronics, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 5
    Author Affiliations:
    • School of Microelectronics, Tianjin University, Tianjin, China
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: 1.476 mW

Applications & Benefits

• cell_imaging: Applications include CMOS image sensors for digital imaging in smartphones, medical devices, and automotive systems.
• benefits: Enables efficient conversion of light into electrical signals for high-quality imaging.

Supporting Organizations

• supported_by: National Key Research and Development Plan of China

Manuscript Details

• publication_date: April 2021

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_296eac0b-85bd-4353-926f-f3d822f97e26-a_lowripple_charge_pump_with_novel_compensator_for_transientresponse_improvement_in_cmos_image_sensors.json