A Lowpower 6514Nm Stacked Cmos Image Sensor
- doi: 10.1109/ISCAS45731.2020.9180435
-
title: A Low-Power 65/14nm Stacked CMOS Image Sensor
- publisher: IEEE
- isbn: 978-1-7281-3320-1
- issn: 2158-1525
- rank: 799
- access_type: LOCKED
- content_type: Conferences
-
abstract: This paper presents a low-power stacked CMOS
image sensor (CIS) in 65/14nm process. With 14nm process, we could
achieve 29% less power consumption than the conventional CIS in 65/28nm
process. The measured random telegraph noise (RTN) result shows the
65/14nm stacked CIS to guarantee the commercial sensor image quality
even though a fin field-effect transistor (FinFET) process is
three-dimension channel structure. The pixel array of the implemented
chip consists of 12-mega pixels (Mp) with a dual-photodiode (2PD) in
1.4μm pixel pitch, and the sensor output provides 120 frames per second
while it consumes 612mW for 12Mp image and 3Mp auto-focus data via a
mobile industry processor interface (MIPI) physical layer (DPHY) up to
6.5Gbps/lane. The measured random noise is 2.2e-at 16× analog gain, and
figure-of-merit (FoM) of analog-to-digital converters (ADCs) achieves
0.46e-nJ.
- article_number: 9180435
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9180435
-
html_url:
https://ieeexplore.ieee.org/document/9180435/
-
abstract_url:
https://ieeexplore.ieee.org/document/9180435/
-
publication_title: 2020 IEEE International Symposium on
Circuits and Systems (ISCAS)
- conference_location: Seville, Spain
- conference_dates: 12-14 Oct 2020
- publication_number: 9179985
- is_number: 9180369
- publication_year: 2020
- publication_date: 12-14 Oct 2020
- start_page: 1
- end_page: 4
- citing_paper_count: 7
- citing_patent_count: 0
- download_count: 4185
- insert_date: 20200928
-
index_terms:
-
ieee_terms:
- CMOS image sensors
- Logic circuits
- Logic gates
- FinFETs
- Power demand
- Semiconductor device measurement
-
author_terms:
- CMOS image sensor (CIS)
- Low-power CIS
- 65/14nm Stacked CIS
-
dynamic_index_terms:
- Imaging Data
- Power Consumption
- Random Noise
- Analog-to-digital Converter
- Physical Layer
- Mobile Interface
- Learning Algorithms
- Wireless
- Internet Of Things
- Pixel Resolution
- Phase-locked Loop
- Planar Devices
- Switching Transistors
-
isbn_formats:
-
format: Print ISBN,
value: 978-1-7281-3320-1,
isbnType: New-2005
-
authors:
-
Author Name: Minho Kwon
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37270067800
ID: 37270067800
Order: 1
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Seunghyun Lim
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37073476100
ID: 37073476100
Order: 2
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Hyeokjong Lee
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088933325
ID: 37088933325
Order: 3
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Il-Seon Ha
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088726592
ID: 37088726592
Order: 4
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Moo-Young Kim
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37087883341
ID: 37087883341
Order: 5
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Il-Jin Seo
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088935228
ID: 37088935228
Order: 6
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Suho Lee
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088931010
ID: 37088931010
Order: 7
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Yongsuk Choi
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088934439
ID: 37088934439
Order: 8
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Kyunghoon Kim
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37880199500
ID: 37880199500
Order: 9
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Hansoo Lee
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088680183
ID: 37088680183
Order: 10
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Won-Woong Kim
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088734944
ID: 37088734944
Order: 11
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Seonghye Park
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37406947000
ID: 37406947000
Order: 12
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Kyongmin Koh
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37087452166
ID: 37087452166
Order: 13
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Jesuk Lee
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088733976
ID: 37088733976
Order: 14
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
-
Author Name: Yongin Park
Affiliation: Samsung Electronics, Hwaseong, South
Korea
Author URL:
https://ieeexplore.ieee.org/author/37088737955
ID: 37088737955
Order: 15
Author Affiliations:
- Samsung Electronics, Hwaseong, South Korea
Image Sensor
- sensor_type: CMOS
- resolution: 4032(H) x 3040(V) 12.2M pixels
- dynamic_range: 65dB
- pixel_size: 1.4µm x 1.4µm (Dual PD)
- dark_current: not specified
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
- frame_rate: 120fps
- power_consumption: 612mW
- noise: 2.22e- at 16x analog gain
Applications & Benefits
-
cell_imaging: Used in smartphones, medical devices,
automotive systems, and IoT applications
-
benefits: Low power consumption and high-quality images
with advanced features such as dual-photodiode
Supporting Organizations
-
supported_by: Samsung Foundry, Sensor Design Team,
Pixel Design and Solution Team of S.LSI
Manuscript Details
- publication_date: 12-14 Oct 2020
Relevancy Score
- score: 10
-
missing_fields:
- fill factor
- quantum efficiency
- noise sources
- readout speed
- microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
- analogue-to-digital conversion techniques
Processed JSON Filename
request_3a8973bc-bb28-4dd8-a1af-6cd05e9216bb-a_lowpower_6514nm_stacked_cmos_image_sensor.json