A Lownoise Saturationstacked Bandgap Reference For Image Sensor Applications

• doi: 10.1109/SMICND.2014.6966450
• title: A low-noise saturation-stacked bandgap reference for image sensor applications
• publisher: IEEE
• isbn: 978-1-4799-3916-9
• issn: 2377-0678
• rank: 1149
• access_type: LOCKED
• content_type: Conferences
• abstract: A novel architecture for a bandgap voltage reference is presented in this paper. The voltage reference, designed for image sensor applications, is primarily targeted for a low-noise operation along with other practical constraints such as high power supply rejection, temperature immunity and short start-up time. The analysis and operation of the circuit is discussed and the trade-offs involved in the implementation aspects are examined. The measurement results of the fabricated circuit in a 0.35-μm CMOS process show a noise voltage level of 450 nV/√Hz at 10 Hz, a temperature coefficient of 14 ppm/K and a PSRR of 52 dB.
• article_number: 6966450
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966450
• html_url: https://ieeexplore.ieee.org/document/6966450/
• abstract_url: https://ieeexplore.ieee.org/document/6966450/
• publication_title: 2014 International Semiconductor Conference (CAS)
• conference_location: Sinaia, Romania
• conference_dates: 13-15 Oct. 2014
• publication_number: 6950760
• is_number: 6966364
• publication_year: 2014
• publication_date: 13-15 Oct. 2014
• start_page: 247
• end_page: 250
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 573
• insert_date: 20141201
• index_terms:
  • ieee_terms:
    • Noise
    • Photonic band gap
    • Transistors
    • Temperature measurement
    • Temperature dependence
    • Image sensors
    • Logic gates
  • author_terms:
    • saturation-stacked
    • low-noise
    • image sensors
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Temperature Coefficient
    • Circuit Performance
    • Circuit Operation
    • CMOS Process
    • Voltage Noise
    • Supply Temperature
    • Temperature Dependence
    • Carrier Mobility
    • Electron Mobility
    • Hole Mobility
    • Current Source
    • Current Regulations
    • Thermal Noise
    • Current Noise
    • Voltage Regulation
    • Voltage Stability
    • Bias Current
    • Inductive Load
    • Load Capacitance
    • Bipolar Transistor
    • Bipolar Junction Transistor
    • Collector Current
    • Saturation Region
    • Differential Amplifier
    • Thermal Source
    • Flicker Noise
    • Readout Circuit
    • Output Voltage Reference
    • Current Mirror
• isbn_formats:
  • format: Print ISBN, value: 978-1-4799-3916-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4799-3917-6, isbnType: New-2005
• authors:
  • Author Name: Iyappan Subbiah
    Affiliation: Integrated Analog Circuits and RF Systems, RWTH Aachen University
    Author URL: https://ieeexplore.ieee.org/author/37074388800
    ID: 37074388800
    Order: 1
    Author Affiliations:
    • Integrated Analog Circuits and RF Systems, RWTH Aachen University
    • Institute of Nanoelectronics, Hamburg University of Technology
  • Author Name: Andreas Süss
    Affiliation: University of Duisburg-Essen
    Author URL: https://ieeexplore.ieee.org/author/37891664000
    ID: 37891664000
    Order: 2
    Author Affiliations:
    • University of Duisburg-Essen
    • Optical Sensor Systems, Fraunhofer Institute for Microelectronic Circuits and Systems
    • imec/ MICAS, KU-Leuven
  • Author Name: Andrey Kravchenko
    Affiliation: University of Duisburg-Essen
    Author URL: https://ieeexplore.ieee.org/author/37085341046
    ID: 37085341046
    Order: 3
    Author Affiliations:
    • University of Duisburg-Essen
  • Author Name: Bedrich Hosticka
    Affiliation: University of Duisburg-Essen
    Author URL: https://ieeexplore.ieee.org/author/37275079700
    ID: 37275079700
    Order: 4
    Author Affiliations:
    • University of Duisburg-Essen
    • Optical Sensor Systems, Fraunhofer Institute for Microelectronic Circuits and Systems
  • Author Name: Wolfgang Krautschneider
    Affiliation: Institute of Nanoelectronics, Hamburg University of Technology
    Author URL: https://ieeexplore.ieee.org/author/37268733700
    ID: 37268733700
    Order: 5
    Author Affiliations:
    • Institute of Nanoelectronics, Hamburg University of Technology

Image Sensor

• sensor_type: CMOS
• resolution: No specific resolution provided
• dynamic_range: No specific dynamic range provided
• pixel_size: No specific pixel size provided
• dark_current: No specific dark current provided

Optical Data

• focal_length: No specific focal length provided
• aperture: No specific aperture provided
• field_of_view: No specific field of view provided
• distortion: No specific distortion provided

Performance Metrics

• frame_rate: No specific frame rate provided
• signal_to_noise_ratio: Not explicitly stated, but low noise reference implies good performance
• sensitivity: No specific sensitivity provided
• shutter_speed: No specific shutter speed provided
• power_consumption: 135 μA
• noise: 450 nV/√Hz at 10 Hz

Applications & Benefits

• cell_imaging: Image sensor applications include consumer electronics, automotive driver assistance, and night vision systems.
• benefits: Low-noise operation, high power supply rejection, temperature immunity, short start-up time.

Supporting Organizations

• supported_by: Institute of Nanoelectronics, Hamburg University of Technology; Integrated Analog Circuits and RF Systems, RWTH Aachen University; Optical Sensor Systems, Fraunhofer Institute for Microelectronic Circuits and Systems; imec / MICAS, KU-Leuven; University of Duisburg-Essen

Manuscript Details

• publication_date: 13-15 Oct. 2014

Relevancy Score

• score: 9
• missing_fields:
  • sensor_type
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed

Processed JSON Filename

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