A Lownoise Image Sensor Readout Circuit With Internal Timing Generator

• doi: 10.1109/LSENS.2018.2875444
• title: A Low-Noise Image Sensor Readout Circuit With Internal Timing Generator
• publisher: IEEE
• isbn:
• issn: 2475-1472
• rank: 795
• access_type: LOCKED
• content_type: Journals
• abstract: We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-μm CMOS technology and occupying an area of 2.3 × 13.6 mm2, the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-μV root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3 V, low power consumption of 42 mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.
• article_number: 8489924
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8489924
• html_url: https://ieeexplore.ieee.org/document/8489924/
• abstract_url: https://ieeexplore.ieee.org/document/8489924/
• publication_title: IEEE Sensors Letters
• conference_location:
• conference_dates:
• publication_number: 7782634
• is_number: 8467444
• publication_year: 2018
• publication_date: Dec. 2018
• start_page: 1
• end_page: 4
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 486
• insert_date: 20181011
• index_terms:
  • ieee_terms:
    • Image sensors
    • Dynamic range
    • Timing
    • Topology
    • Integrated circuits
    • Sensor systems
  • author_terms:
    • Sensor systems (SYST)
    • electromagnetic wave sensors (OPTO)
    • sensor packaging (PACK)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Readout Circuit
    • Dynamic Range
    • Power Consumption
    • Linear Range
    • Metal Oxide Semiconductor
    • Metal-oxide-semiconductor
    • Metal-oxide Semiconductor
    • Low Power Consumption
    • Trigger Signal
    • Linear Dynamic Range
    • Complementary Metal Oxide Semiconductor Technology
    • Complementary Metal-oxide-semiconductor Technology
    • Conversion Efficiency
    • Measurement Noise
    • System Architecture
    • Low Noise
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Thermal Noise
    • Current Noise
    • Output Node
    • Output Stage
    • Clock Frequency
    • Output Pixel
    • Edge Of Signal
    • Input-referred Noise
    • Transimpedance Amplifier
    • Detection Circuit
    • Output Buffer
    • Generation Circuit
• authors:
  • Author Name: Trong-Hieu Ngo
    Affiliation: Department of Information and Communications Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37311843200
    ID: 37311843200
    Order: 1
    Author Affiliations:
    • Department of Information and Communications Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Ikechi Augustine Ukaegbu
    Affiliation: Department of Electrical and Computer Engineering, Nazarbayev University, Astana, Kazakhstan
    Author URL: https://ieeexplore.ieee.org/author/38557924600
    ID: 38557924600
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, Nazarbayev University, Astana, Kazakhstan
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
  • Author Name: Min-Gug Kim
    Affiliation: Teltron Inc., Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37086508202
    ID: 37086508202
    Order: 3
    Author Affiliations:
    • Teltron Inc., Daejeon, South Korea
  • Author Name: Hyo-Hoon Park
    Affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37277119100
    ID: 37277119100
    Order: 4
    Author Affiliations:
    • Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: 2.3 V
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: 42 mA
• noise: 188.7 μV RMS

Applications & Benefits

• cell_imaging: Medical imaging applications
• benefits: Low-cost, low power consumption, high integration density, and wide bandwidth.

Supporting Organizations

• supported_by: Korean Ministry of Education, Science, and Technology

Manuscript Details

• publication_date: Dec. 2018

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed

Processed JSON Filename

request_0b467df1-9069-437f-a7e5-2cc455076115-a_lownoise_image_sensor_readout_circuit_with_internal_timing_generator.json