A Lownoise Areaefficient Columnparallel Adc With An Input Triplet For A 120Db High Dynamic Range Cmos Image Sensor

• doi: 10.1109/TVLSI.2023.3323363
• title: A Low-Noise Area-Efficient Column-Parallel ADC With an Input Triplet for a 120-dB High Dynamic Range CMOS Image Sensor
• publisher: IEEE
• isbn:
• issn: 1557-9999
• rank: 789
• access_type: LOCKED
• content_type: Journals
• abstract: This article presents and demonstrates the design of a high dynamic range (HDR) CMOS image sensor (CIS). Detailed operation of various comparator circuits is analyzed. A low-noise, area-efficient, wide-input range comparator is proposed for HDR applications. Based on the analysis, a six-transistor (6T) comparator is proposed with a p-type metal oxide semiconductor (PMOS) input triplet, which effectively increases the input range of a conventional PMOS-input type comparator and compensates the charge injection and kT/C noise introduced from pixels switching between high-conversion-gain (HCG) and low-conversion-gain (LCG) modes. The proposed scheme achieves an extra high dynamic range (DR). A full HD ( $1920\times1080$ ) HDR image sensor with $2.9 ~\mu \text{m}$ pixel pitches is fabricated in a 55 nm one-ploy five-metal (1P5M) CIS process. The incorporated analog-to-digital conversion (ADC) demonstrates a 12-bit resolution, a noise of $96 ~\mu _{\mathrm {VRMS}}$ , a power consumption of $25 ~\mu \text{W}$ , an area of $2.9\times 400\,\,\mu \text{m}$ , and its integral non-linearity (INL) and differential non-linearity (DNL) are −0.43/+7.22 and −0.30/+0.29 LSB, respectively. The sensor achieves a 120-dB DR at 30 frames/sec and a temporal noise of 0.91e-.
• article_number: 10287277
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10287277
• html_url: https://ieeexplore.ieee.org/document/10287277/
• abstract_url: https://ieeexplore.ieee.org/document/10287277/
• publication_title: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
• conference_location:
• conference_dates:
• publication_number: 92
• is_number: 10328903
• publication_year: 2023
• publication_date: Dec. 2023
• start_page: 1939
• end_page: 1949
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 1446
• insert_date: 20231017
• index_terms:
  • ieee_terms:
    • Switches
    • Capacitance
    • Capacitors
    • MOS devices
    • Power demand
    • Random access memory
    • Metals
  • author_terms:
    • CMOS image sensor (CIS)
    • comparator
    • correlated double sampling
    • dual conversion gain (DCG)
    • dual exposure
    • high dynamic range (HDR)
    • readout circuit
    • single-slope analog-to-digital conversion (SS-ADC)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • High Dynamic Range
    • Input Triplets
    • Power Consumption
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Metal Oxide Semiconductor
    • Input Range
    • Charge Injection
    • Conventional Type
    • Pixel Pitch
    • 12-bit Resolution
    • High Dynamic Range Image
    • Low Power Consumption
    • Parasitic Capacitance
    • Sensor Output
    • Noise Performance
    • Input Pair
    • Pixel Array
    • Saturation Region
    • Static Random Access Memory
    • Differential Pair
    • Conversion Gain
    • Input-referred Noise
    • Additional Capacitance
    • Offset Voltage
    • Gain Error
    • Readout Circuit
    • Flicker Noise
    • Saturation Voltage
• authors:
  • Author Name: Pai-Hsiang Hsu
    Affiliation: Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086862388
    ID: 37086862388
    Order: 1
    Author Affiliations:
    • Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
  • Author Name: Yueh-Ru Lee
    Affiliation: Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086863008
    ID: 37086863008
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
  • Author Name: Chia-Hung Chen
    Affiliation: Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37539301400
    ID: 37539301400
    Order: 3
    Author Affiliations:
    • Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
  • Author Name: Chung-Chih Hung
    Affiliation: Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37289818800
    ID: 37289818800
    Order: 4
    Author Affiliations:
    • Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: 1920x1080
• dynamic_range: 120 dB
• pixel_size: 2.9 µm
• dark_current: 30,000 e-/lux·s

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps
• sensitivity: 30,000 e-/lux·s
• power_consumption: 150 mW (whole chip), 25 µW (ADC)
• noise: 96 µVRMS

Applications & Benefits

• cell_imaging: Applicable in various imaging technologies such as smartphones, medical devices, and automotive systems.
• benefits: High dynamic range (HDR), low power consumption, compact design.

Supporting Organizations

• supported_by: Sensing and Vision Team, Novatek Inc. and National Science and Technology Council, Taiwan.

Manuscript Details

• publication_date: Dec. 2023

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • shutter_speed

Processed JSON Filename

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