A Low Ripple And Fast Transient Response Charge Pump In Cmos Image Sensors

• doi: 10.1109/JSEN.2024.3359280
• title: A Low Ripple and Fast Transient Response Charge Pump in CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 783
• access_type: LOCKED
• content_type: Journals
• abstract: This article proposed a fully integrated charge pump circuit for HDR CMOS image sensors (CISs). The proposed circuit uses a cross-coupled structure and utilizes pseudo continuous modulation technology so that it exhibits low ripple and fast transient response. The gate–source and the gate–drain voltage of each transistor are efficiently regulated and will not cause transistor damage and aging. This design is implemented in a $0.11 \, \mu \text{m}$ process, layout area is 0.036 mm2. The simulation results show the proposed charge pump achieves a recovery time (99.9%) of 66 ns with an undershoot of 127 mV while maintaining a steady-state ripple of less than 0.59 mVpp. The charge pump consumes a total power of 1.121 mW, ensuring energy-efficient operation.
• article_number: 10419182
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10419182
• html_url: https://ieeexplore.ieee.org/document/10419182/
• abstract_url: https://ieeexplore.ieee.org/document/10419182/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 10472410
• publication_year: 2024
• publication_date: 15 March15, 2024
• start_page: 8142
• end_page: 8149
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 853
• insert_date: 20240202
• index_terms:
  • ieee_terms:
    • Charge pumps
    • Transistors
    • Logic gates
    • Capacitors
    • Sensors
    • Voltage control
    • Transient response
  • author_terms:
    • Charge pump
    • CMOS image sensor (CIS)
    • pseudo continuous modulation
    • ripple
    • transient response
  • dynamic_index_terms:
    • Low Ripple
    • Charge Pump
    • Fast Transient Response
    • Simulation Results
    • Recovery Time
    • High Dynamic Range
    • Gate Drain
    • Gate Source
    • High Voltage
    • Higher Tendency
    • Voltage-gated
    • Gate Voltage
    • Low Voltage
    • Pulse Width
    • Pulsewidth Modulation
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Least Significant Bit
    • Low Bit
    • Clock Frequency
    • Turn Off
    • Output Capacitor
    • Voltage Ripple
    • Photo-generated Charge
    • Feedback Structure
    • Output Voltage Ripple
    • Oxidative Breakdown
    • Gate-source Voltage
• authors:
  • Author Name: Jing Gao
    Affiliation: School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38239776100
    ID: 38239776100
    Order: 1
    Author Affiliations:
    • School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Jianzhe Zhao
    Affiliation: School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37086934282
    ID: 37086934282
    Order: 2
    Author Affiliations:
    • School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Kaiming Nie
    Affiliation: School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085670429
    ID: 37085670429
    Order: 3
    Author Affiliations:
    • School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Jiangtao Xu
    Affiliation: School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 4
    Author Affiliations:
    • School of Microelectronics, Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• power_consumption: 1.121 mW

Applications & Benefits

• cell_imaging: High dynamic range CMOS image sensors (HDR CIS) are used in wide fields such as smartphones and medical devices.
• benefits: The proposed charge pump circuit achieves a recovery time (99.9%) of 66 ns with an undershoot of 127 mV while maintaining a steady-state ripple of less than 0.59 mV pp.

Supporting Organizations

• supported_by: NSAF under Grant 2230116

Manuscript Details

• publication_date: 15 March15, 2024

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_13d0a5ee-1410-42fe-bf15-c4320b2dc133-a_low_ripple_and_fast_transient_response_charge_pump_in_cmos_image_sensors.json