A Hybrid Cmosimager With Perovskites As Photoactive Layer

• doi: 10.1109/ICSENS.2016.7808480
• title: A hybrid CMOS-imager with perovskites as photoactive layer
• publisher: IEEE
• isbn: 978-1-4799-8288-2
• issn:
• rank: 1108
• access_type: LOCKED
• content_type: Conferences
• abstract: A new complementary metal-oxide-semiconductor (CMOS) compatible hybrid CMOS image sensor (CIS) are proposed to enhance pixel fill factor, without increasing fabrication cost and process complexity. In this work, the perovskites(PVSK) is first time proposed to be integrated as pixel photon sensitive layer of CIS supplied with low voltage bias. The thin PVSK layer is vertically deposited on the top of signal read-out circuit which fabricated with 0.18 μm CMOS standard process. We propose the planar type pixel structure design, which has advantages to enhance the high pixel fill factor, and easy integrated with standard CMOS process. For integration process verification and device characterization, the dummy chip of planar type pixel photodetectors was fabricated by e-beam lithography. The on/off ratio of the PVSK photodetector was reached to 875 at 2.5V bias condition under 0.29 mw/cm2 irradiation. Furthermore, we presented the fully-CMOS compatible hybrid CIS with array pixel size 40×40 μm2 integrated with the readout pixel circuit.
• article_number: 7808480
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7808480
• html_url: https://ieeexplore.ieee.org/document/7808480/
• abstract_url: https://ieeexplore.ieee.org/document/7808480/
• publication_title: 2016 IEEE SENSORS
• conference_location: Orlando, FL, USA
• conference_dates: 30 Oct.-3 Nov. 2016
• publication_number: 7777313
• is_number: 7808393
• publication_year: 2016
• publication_date: 30 Oct.-3 Nov. 2016
• start_page: 1
• end_page: 3
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 475
• insert_date: 20170109
• index_terms:
  • ieee_terms:
    • Electrodes
    • Photodetectors
    • Standards
    • Fabrication
    • Radiation effects
    • Metals
    • Sensitivity
  • author_terms:
    • CMOS imager
    • Hybridphotodetector
    • Perovskites
  • dynamic_index_terms:
    • Photoactive Layer
    • Fabrication Process
    • Standard Process
    • Bias Voltage
    • Image Sensor
    • Camera Sensor
    • Electron Beam Lithography
    • E-beam Lithography
    • Bias Conditions
    • Readout Circuit
    • Low Bias Voltage
    • Irradiation
    • Thin Films
    • Alumina
    • Light Source
    • Photoelectron
    • Photoelectric
    • Quantum Efficiency
    • Silicon Wafer
    • Photocurrent
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Pair Of Electrodes
    • Sensor Pixel
    • Test Chip
    • Readout Electronics
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-4799-8288-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4799-8287-5, isbnType: New-2005
• authors:
  • Author Name: Pei-Wen Yen
    Affiliation: Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38466943300
    ID: 38466943300
    Order: 1
    Author Affiliations:
    • Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
  • Author Name: Yan-Rung Lin
    Affiliation: Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37085679153
    ID: 37085679153
    Order: 2
    Author Affiliations:
    • Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
  • Author Name: Sheng-Min Yu
    Affiliation: Material and Chemical Research Laboratories, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37085418344
    ID: 37085418344
    Order: 3
    Author Affiliations:
    • Material and Chemical Research Laboratories, Hsinchu, Taiwan
  • Author Name: Shiu-Cheng Lou
    Affiliation: Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086159298
    ID: 37086159298
    Order: 4
    Author Affiliations:
    • Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
  • Author Name: Kai-Ping Chuang
    Affiliation: Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37066384200
    ID: 37066384200
    Order: 5
    Author Affiliations:
    • Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
  • Author Name: Bor-Nian Chuang
    Affiliation: Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38227767200
    ID: 38227767200
    Order: 6
    Author Affiliations:
    • Industrial Technology Research Institute Center for Measurement Standards, Hsinchu, Taiwan
  • Author Name: Yen-Chih Chiou
    Affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086160287
    ID: 37086160287
    Order: 7
    Author Affiliations:
    • Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
  • Author Name: Chih-Cheng Hsieh
    Affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37365236900
    ID: 37365236900
    Order: 8
    Author Affiliations:
    • Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: Terms related to resolution were not explicitly provided.
• dynamic_range: Dynamic range was limited, specifics not provided.
• pixel_size: 40x40 μm2 for the integrated pixel array; 25x25 μm2 for dummy chip characterization.
• dark_current: Not explicitly specified in the text, but dark current was plotted as a reference in the I-V curve measurements.

Optical Data

• focal_length: Not specified in the text.
• aperture: Not specified in the text.
• field_of_view: Not specified in the text.
• distortion: Not specified in the text.

Performance Metrics

• frame_rate: Not specified in the text.
• signal_to_noise_ratio: Not explicitly stated, but noted characteristics included high on/off ratio of 875 at 2.5V bias.
• sensitivity: Photodetector was noted to have over 1000% EQE, indicating high sensitivity.
• shutter_speed: Not specified in the text.
• power_consumption: Voltage bias mentioned was under 3V, specifics for power consumption not provided.
• noise: Related to correlated double sampling (CDS) implementation, but specific noise levels not provided.

Applications & Benefits

• cell_imaging: Used in applications such as surveillance systems, cameras, and mobile phones.
• benefits: High pixel fill factor, compatibility with existing CMOS processes, and high performance indicated by 1000% EQE.

Supporting Organizations

• supported_by: Industrial Technology Research Institute and National Tsing Hua University.

Manuscript Details

• publication_date: 30 Oct.-3 Nov. 2016

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • shutter_speed

Processed JSON Filename

request_91b0730f-99a5-4325-8ff2-021359a4559e-a_hybrid_cmosimager_with_perovskites_as_photoactive_layer.json