A Highperformance Chargedparticle Cmos Image Sensor With Percolumn Ad Conversion

• doi: 10.1109/NSSMIC.2009.5401894
• title: A high-performance charged-particle CMOS image sensor with per-column A/D conversion
• publisher: IEEE
• isbn: 978-1-4244-3962-1
• issn: 1082-3654
• partnum: 09CH38116
• rank: 1097
• access_type: LOCKED
• content_type: Conferences
• abstract: A CMOS image sensor for charged-particle imaging, such as for transmission electron microscopy, with per-column 10-bit ADC's, has been designed, fabricated and tested. The 0.25 ¿m design's parallel data conversion allows up to 390 frames/s operation. The sensor's sensitivity and signal to noise ratio (>17.5, RMS) are sufficiently high that the imaging of individual energetic incident electrons (e.g., 200 keV) is practical. Electron microscope tests have shown that images created by accumulating, processing and superimposing low-flux images of individual incident electrons (¿electron-counting mode¿) yields superior contrast and resolution to equivalent continuous exposures. To demonstrate this, we measured the modulation transfer function of using electron counting mode which, for example, was found to be more than two times higher at 50 line pairs per mm versus the equivalent standard continuous integration.
• article_number: 5401894
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5401894
• html_url: https://ieeexplore.ieee.org/document/5401894/
• abstract_url: https://ieeexplore.ieee.org/document/5401894/
• publication_title: 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)
• conference_location: Orlando, FL, USA
• conference_dates: 24 Oct.-1 Nov. 2009
• publication_number: 5384532
• is_number: 5401554
• publication_year: 2009
• publication_date: 24 Oct.-1 Nov. 2009
• start_page: 37
• end_page: 41
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 189
• insert_date: 20100129
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Image converters
    • Testing
    • Transmission electron microscopy
    • Data conversion
    • Signal to noise ratio
    • High-resolution imaging
    • Electron microscopy
    • Image resolution
    • Signal resolution
  • author_terms:
    • Active pixel sensor
    • charged-particle imaging
    • per-column analog to digital conversion
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Electron Counting
    • Digital Counting
    • Counting Mode
    • Modulation Transfer Function
    • Optical Transfer Function
    • Continuous Integration
    • Incident Electron
    • Detection Threshold
    • Absolute Threshold
    • Detection Efficiency
    • Charged Particles
    • Single Electron
    • Mode Functions
    • Cluster Centroids
    • Gain Settings
• isbn_formats:
  • format: CD, value: 978-1-4244-3962-1, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-3961-4, isbnType: New-2005
• authors:
  • Author Name: Stuart Kleinfelder
    Affiliation: University of California, Irvine, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37278135600
    ID: 37278135600
    Order: 1
    Author Affiliations:
    • University of California, Irvine, CA, USA
  • Author Name: Liang Jin
    Affiliation: University of California, San Diego, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37399023100
    ID: 37399023100
    Order: 2
    Author Affiliations:
    • University of California, San Diego, CA, USA
  • Author Name: Xuong Nguyen-Huu
    Affiliation: University of California, San Diego, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/38275264600
    ID: 38275264600
    Order: 3
    Author Affiliations:
    • University of California, San Diego, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: 560x460 pixels
• dynamic_range: Not specified
• pixel_size: 5.35 μm
• dark_current: 2.54 e-/ms at 26 °C; 0.29 e-/ms at -19 °C

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 390 fps at 8-bit resolution; 217 fps at 10-bit resolution
• signal_to_noise_ratio: 17.5 dB for 200 keV electrons
• noise: 19.4 e- after CDS

Applications & Benefits

• cell_imaging: Used for charged-particle imaging in transmission electron microscopy (TEM)
• benefits: High sensitivity for single-electron counting; better contrast and resolution in imaging via electron counting mode.

Supporting Organizations

• supported_by: University of California, Irvine; University of California, San Diego

Manuscript Details

• publication_date: 24 Oct.-1 Nov. 2009

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • quantum_efficiency
  • power_consumption
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • shutter_speed

Processed JSON Filename

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