A High Frame Rate Hybrid Xray Image Sensor

• doi: 10.1109/JSEN.2014.2359153
• title: A High Frame Rate Hybrid X-Ray Image Sensor
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 744
• access_type: LOCKED
• content_type: Journals
• abstract: This paper describes a solid-state image sensor for high-speed X-ray imaging. The sensor is made up of a light sensitive detector layer bump-bonded to a readout integrated circuit (ROIC). The detector layer is high resistivity n-type silicon and is fully depleted in operation. The p-implanted islands are used to define pixel regions with 100- $\mu $ m $\times 100$ - $\mu $ m area. The detector layer contains $852 \times 209$ pixels indium bump-bonded to four identical CMOS ROICs. Each ROIC contains 213 $\times $ 209 pixels and is fabricated using a 0.25- $\mu $ m CMOS process. The ROIC utilizes a capacitive transimpedance amplifier-type front-end coupled to a switched capacitor analog memory. This architecture allows storage of eight frames for high-speed burst imaging of up to a million frames per second, followed by a slower multiplexed readout. Details of the sensor design and operation are presented together with characterization results.
• article_number: 6905719
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6905719
• html_url: https://ieeexplore.ieee.org/document/6905719/
• abstract_url: https://ieeexplore.ieee.org/document/6905719/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6982245
• publication_year: 2015
• publication_date: March 2015
• start_page: 1523
• end_page: 1531
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 730
• insert_date: 20140919
• index_terms:
  • ieee_terms:
    • Detectors
    • Noise
    • Computer architecture
    • Photonics
    • CMOS integrated circuits
    • Transistors
  • author_terms:
    • High-speed image sensor
    • hybrid image sensor
    • X-ray sensor
    • ROIC
    • CMOS
  • dynamic_index_terms:
    • Frame Rate
    • High Frame Rate
    • Sensor Operation
    • Electrode
    • Positively Charged
    • Exposure Time
    • High Speed
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Quantum Efficiency
    • Short Exposure Time
    • Target Application
    • CMOS Technology
    • Thermoelectric Coolers
    • Peltier Element
    • Peltier Device
    • Peltier Cooler
    • Excess Charge
    • Noise Performance
    • Charge Collection
    • Small Region Of Interest
    • Radiation Tolerance
    • Radiation Hardness
    • Analog Output
    • Storage Elements
    • Large Swings
    • Threshold Voltage Shift
    • Thermal Noise
    • Current Noise
• authors:
  • Author Name: Alper Ercan
    Affiliation: Cornell University, Ithaca, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37416753900
    ID: 37416753900
    Order: 1
    Author Affiliations:
    • Cornell University, Ithaca, NY, USA
  • Author Name: Mark W. Tate
    Affiliation: Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37319989300
    ID: 37319989300
    Order: 2
    Author Affiliations:
    • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
  • Author Name: Sol M. Gruner
    Affiliation: Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37319745900
    ID: 37319745900
    Order: 3
    Author Affiliations:
    • Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
    • Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY, USA

Image Sensor

• sensor_type: CMOS
• resolution: 852x209 pixels
• dynamic_range: To be determined
• pixel_size: 100 μm x 100 μm
• dark_current: 1 pA/pixel at room temperature, reduced at -20C operating temperature to allow longer exposure times.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: Up to 1 million frames per second
• signal_to_noise_ratio: Target SNR of 100
• shutter_speed: Exposure time below 1 μsec
• noise: Read noise dominated by thermal noise of the CTIA amplifier and reset switch.

Applications & Benefits

• cell_imaging: Used in structural studies and radiography/tomography applications.
• benefits: Direct conversion of x-ray photons into charges helps overcome afterglow and optical cross-talk problems, enabling high-speed imaging.

Supporting Organizations

• supported_by: U.S. Department of Energy, Keck Foundation, Cornell High Energy Synchrotron Source (CHESS).

Manuscript Details

• publication_date: March 2015

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • temporal noise
  • fixed-pattern noise
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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