A Global Shutter High Speed Tdi Cmos Image Sensor With Pipelined Charge Transfer Pixel

• doi: 10.1109/JSEN.2018.2800743
• title: A Global Shutter High Speed TDI CMOS Image Sensor With Pipelined Charge Transfer Pixel
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 729
• access_type: LOCKED
• content_type: Journals
• abstract: In this paper, a 120 × 45 global shutter high speed time delay integration (TDI) CMOS image sensor with pipelined charge transfer pixel (PCT-pixel) is presented. Offset free and low noise pipelined signal accumulation are achieved by the PCT-pixel, and a novel layout is also proposed to increase the equivalent photosensitive area's fill factor of the proposed pixel. Due to the parallelism of the proposed PCT-pixel, global shutter exposure method is applied in this sensor, which can eliminate nonsynchronous signal capturing problem. The proposed TDI sensor is implemented in a 0.11-μm one-poly three-metal CMOS image sensor technology with a line rate of 100 KHz, a PCT-pixel size of 30 × 15 μm2, and a fill factor of 43.5%. Measurement results show that the sensor can achieve a maximum sensitivity of 95 V/lux × sec and an energy consumption of 0.12 nJ/pixel. Measured signal-to-noise ratio boost value follows theoretical value well. The proposed sensor has the potential to achieve high scanning speed and high TDI stage while costing less power and silicon area.
• article_number: 8278268
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8278268
• html_url: https://ieeexplore.ieee.org/document/8278268/
• abstract_url: https://ieeexplore.ieee.org/document/8278268/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 8310714
• publication_year: 2018
• publication_date: 1 April1, 2018
• start_page: 2729
• end_page: 2736
• citing_paper_count: 14
• citing_patent_count: 0
• download_count: 1421
• insert_date: 20180201
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Sensors
    • Charge transfer
    • Timing
    • Signal processing
    • Capacitors
  • author_terms:
    • Time delay integration
    • CMOS image sensor
    • high speed
    • pipeline
    • charge transfer
  • dynamic_index_terms:
    • High Speed
    • Image Sensor
    • Camera Sensor
    • Global Image
    • Global Shutter
    • Time Delay Integration
    • Time-delay Integration
    • Theoretical Value
    • Fill Factor
    • Equivalent Area
    • Global Exposure
    • Silicon Area
    • High Scanning Speed
    • CCD Camera
    • Charge-coupled Device
    • Charge Coupled Device
    • Effect Of Noise
    • Stochastic Events
    • Stochastic Effects
    • Equivalent Circuit
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Thermal Noise
    • Current Noise
    • Shot Noise
    • Poisson Noise
    • Shot-noise
    • Dark Current
    • Charge Injection
    • PIN Photodiode
    • Along-track Direction
    • Readout Circuit
    • Even And Odd
    • Flicker Noise
    • Readout Noise
    • Part Of The Circuit
    • Offset Voltage
    • Kinds Of Sensors
    • Charged Domain
• authors:
  • Author Name: Jiangtao Xu
    Affiliation: Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 1
    Author Affiliations:
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Xiaolin Shi
    Affiliation: Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37086343166
    ID: 37086343166
    Order: 2
    Author Affiliations:
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Kaiming Nie
    Affiliation: Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085670429
    ID: 37085670429
    Order: 3
    Author Affiliations:
    • Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China
  • Author Name: Zhiyuan Gao
    Affiliation: School of Computers, Guangdong University of Technology, Guangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37085495653
    ID: 37085495653
    Order: 4
    Author Affiliations:
    • School of Computers, Guangdong University of Technology, Guangzhou, China

Image Sensor

• sensor_type: CMOS image sensor
• resolution: 120x45
• dynamic_range: not specified
• pixel_size: 30x15 µm²
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 100 KHz
• sensitivity: 95 V/lux × sec
• power_consumption: 0.12 nJ/pixel

Applications & Benefits

• cell_imaging: suitable for low-illumination, high scanning speed, and remote sensing systems
• benefits: high sensitivity, low power consumption, and potential for high scanning speed and high TDI stages

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Natural Science Foundation of Tianjin

Manuscript Details

• publication_date: 1 April1, 2018

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • shutter_speed
  • noise

Processed JSON Filename

request_33cd2112-347d-4c3e-9093-18aa47d97d96-a_global_shutter_high_speed_tdi_cmos_image_sensor_with_pipelined_charge_transfer_pixel.json