A Geiger Mode Apd Fabricated In Standard 65Nm Cmos Technology
- doi: 10.1109/IEDM.2013.6724705
-
title: A Geiger mode APD fabricated in standard 65nm
CMOS technology
- publisher: IEEE
- isbn: 978-1-4799-2306-9
- issn: 0163-1918
- rank: 726
- access_type: LOCKED
- content_type: Conferences
-
abstract: We present the first avalanche photodiode
(APD) successfully fabricated in standard 65nm CMOS technology. The APD
operates both in proportional and Geiger mode at -60C to +60C
temperature range. The device comprises an octagonal n+p-well junction
surrounded by an n-tub guard-ring; its photon detection probability
peaks at 450nm with 200mV excess bias and it is above 1% between 350 and
750nm. The dark count rate is 1.5kHz/μm2 at 200mV excess bias, while
afterpulsing is less than 1% for a dead time longer than 5μs and timing
jitter is better than 235ps. Applications include low-power,
ultra-high-speed quantum number generators, time-of-flight 3D image
sensors, LIDAR detectors, and time-resolved spectroscopy.
- article_number: 6724705
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6724705
-
html_url:
https://ieeexplore.ieee.org/document/6724705/
-
abstract_url:
https://ieeexplore.ieee.org/document/6724705/
-
publication_title: 2013 IEEE International Electron
Devices Meeting
- conference_location: Washington, DC, USA
- conference_dates: 9-11 Dec. 2013
- publication_number: 6709840
- is_number: 6724533
- publication_year: 2013
- publication_date: 9-11 Dec. 2013
- start_page: 27.5.1
- end_page: 27.5.4
- citing_paper_count: 24
- citing_patent_count: 0
- download_count: 1243
- insert_date: 20140130
-
index_terms:
-
ieee_terms:
- Temperature measurement
- Voltage measurement
- Electric breakdown
- Standards
- CMOS integrated circuits
- CMOS technology
- Photonics
-
dynamic_index_terms:
- Standard Technology
- CMOS Technology
- Avalanche Photodiode
- Standard CMOS
- Geiger Mode
- Standard 65-nm CMOS
- Standard 65-nm CMOS Technology
- Dead Time
- Time-resolved Spectroscopy
- Octagonal
- Dark Count
- Timing Jitter
- Dark Count Rate
- Logarithmic Scale
- Log-scale
- Photon Counting
- Time-correlated Single-photon Counting
- TCSPC
- Single-photon Avalanche Diode
-
isbn_formats:
-
format: Electronic ISBN,
value: 978-1-4799-2306-9,
isbnType: New-2005
-
authors:
-
Author Name: Edoardo Charbon
Affiliation: Delft University of Technology, Delft,
the Netherlands
Author URL:
https://ieeexplore.ieee.org/author/37271353200
ID: 37271353200
Order: 1
Author Affiliations:
- Delft University of Technology, Delft, the Netherlands
-
Author Name: Hyung-June Yoon
Affiliation: EPFL, Lausanne, Switzerland
Author URL:
https://ieeexplore.ieee.org/author/37086725293
ID: 37086725293
Order: 2
Author Affiliations:
- EPFL, Lausanne, Switzerland
-
Author Name: Yuki Maruyama
Affiliation: Delft University of Technology, Delft,
the Netherlands
Author URL:
https://ieeexplore.ieee.org/author/37672443200
ID: 37672443200
Order: 3
Author Affiliations:
- Delft University of Technology, Delft, the Netherlands
Image Sensor
- sensor_type: CMOS
- resolution: undefined
- dynamic_range: undefined
- pixel_size: 8x8 µm²
- dark_current: 2-20 pA
Optical Data
- focal_length: undefined
- aperture: undefined
- field_of_view: undefined
- distortion: undefined
Performance Metrics
- frame_rate: undefined
- signal_to_noise_ratio: undefined
- sensitivity: undefined
- shutter_speed: undefined
- power_consumption: undefined
- noise: undefined
Applications & Benefits
-
cell_imaging: Applications include time-resolved
spectroscopy, LIDAR, and embedded security.
-
benefits: Single-photon sensitivity and time-of-arrival
detection are critical.
Supporting Organizations
-
supported_by: Swiss National Science Foundation,
European Commission
Manuscript Details
- publication_date: 9-11 Dec. 2013
Relevancy Score
- score: 8
-
missing_fields:
- resolution
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
request_371ae1b9-9465-48aa-a9b8-09803508663a-a_geiger_mode_apd_fabricated_in_standard_65nm_cmos_technology.json