A Fullyintegrated 860Ghz Cmos Terahertz Sensor

• doi: 10.1109/ASSCC.2015.7387437
• title: A fully-integrated 860-GHz CMOS terahertz sensor
• publisher: IEEE
• isbn: 978-1-4673-7191-9
• issn:
• rank: 1065
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper proposes a fully-integrated 860-GHz terahertz wave sensor. The sensor integrates a terahertz detector and readout circuit in 180-nm standard CMOS process. The readout circuit consists of a low-noise instrumentation amplifier and a high-resolution AZ-ADC. Transmissive imaging without source modulation (no lock-in technique required) is realized using the sensor. The detector consists of a novel on-chip grounded patch antenna, a source-feeding NMOS field effect transistor and matching networks. A quarter-wavelength microstrip transmission line is designed to connect the gate of the NMOS transistor to eliminate the influence of bonding wire and pad. The measured maximum voltage responsivity (Rv) and minimum noise equivalent power (NEP) of the detector at 860 GHz are 3.3 kV/W and 106 pW/Hz1/2, respectively. The measured readout circuit noise is 2. 03 μVrms.
• article_number: 7387437
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7387437
• html_url: https://ieeexplore.ieee.org/document/7387437/
• abstract_url: https://ieeexplore.ieee.org/document/7387437/
• publication_title: 2015 IEEE Asian Solid-State Circuits Conference (A-SSCC)
• conference_location: Xiamen, China
• conference_dates: 9-11 Nov. 2015
• publication_number: 7378179
• is_number: 7387429
• publication_year: 2015
• publication_date: 9-11 Nov. 2015
• start_page: 1
• end_page: 4
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 748
• insert_date: 20160121
• index_terms:
  • ieee_terms:
    • Detectors
    • CMOS integrated circuits
    • Imaging
    • Logic gates
    • Instruments
    • Transmission line measurements
    • CMOS technology
  • author_terms:
    • CMOS
    • terahertz imaging
    • continuous wave
    • terahertz sensor
    • terahertz detector
    • readout circuit
  • dynamic_index_terms:
    • Terahertz Sensor
    • Field-effect Transistors
    • Voltage Response
    • Matching Network
    • Low-noise Amplifier
    • Source Module
    • Readout Circuit
    • Noise Equivalent Power
    • Ground Plane
    • Floor Plan
    • Metal Layer
    • Directional Antenna
    • Antenna Beam
    • Open Lines
    • Operational Amplifier
    • Op-amp
    • DC Signal
    • Center Of The Antenna
    • Bottom Metal
    • Top Metal Layer
    • Terahertz Imaging
• isbn_formats:
  • format: Electronic ISBN, value: 978-1-4673-7191-9, isbnType: New-2005
• authors:
  • Author Name: Zhao-yang Liu
    Affiliation: State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37085708907
    ID: 37085708907
    Order: 1
    Author Affiliations:
    • State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • Author Name: Li-yuan Liu
    Affiliation: State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37085745851
    ID: 37085745851
    Order: 2
    Author Affiliations:
    • State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • Author Name: Jie Yang
    Affiliation: State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37089545294
    ID: 37089545294
    Order: 3
    Author Affiliations:
    • State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • Author Name: Nan-jian Wu
    Affiliation: State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37286754000
    ID: 37286754000
    Order: 4
    Author Affiliations:
    • State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: 0.18 µm (gate length), 0.24 µm (gate width)
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• signal_to_noise_ratio: 2.03 µVrms

Applications & Benefits

• cell_imaging: not specified
• benefits: Terahertz imaging applications without lock-in measurement techniques.

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Beijing Nature Science Foundation

Manuscript Details

• publication_date: 9-11 Nov. 2015

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption
  • cell_imaging
  • noise

Processed JSON Filename

request_650fa35c-0fd7-48de-a567-6d8373de6138-a_fullyintegrated_860ghz_cmos_terahertz_sensor.json