A Fastgated Cmos Image Sensor With A Vertical Overflow Drain Shutter Mechanism

• doi: 10.1109/TED.2015.2443056
• title: A Fast-Gated CMOS Image Sensor With a Vertical Overflow Drain Shutter Mechanism
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 711
• access_type: LOCKED
• content_type: Journals
• abstract: This paper presents a fast-gated CMOS image sensor (CIS) with a vertical overflow drain (VOD) shutter mechanism. The prototype imager includes two novel features: 1) the adaptation of the VOD shutter structure into a 0.18-μm CIS process and 2) the application of the VOD shutter for the purposes of time-resolved imaging with down to 5-ns pulsewidth. A 360-pixel × 180-pixel array with several 5.4-μm × 5.4-μm pixel types was implemented and tested, demonstrating 2-ns shutter rise/fall times and the 1:20 shutter contrast ratio for 850-nm pulsed illumination. These parameters, together with the uniformity of the shutter and the large full-well capacity of the pixel, are on par with the state-of-the-art of indirect time-of-flight and time-resolved imagers. The device structure and the special mode of operation that enables a fast gating are studied through the TCAD simulations and experimental results. Important design features that affect the pixel performance are illustrated in detail.
• article_number: 7131512
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7131512
• html_url: https://ieeexplore.ieee.org/document/7131512/
• abstract_url: https://ieeexplore.ieee.org/document/7131512/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 7365508
• publication_year: 2016
• publication_date: Jan. 2016
• start_page: 138
• end_page: 144
• citing_paper_count: 3
• citing_patent_count: 2
• download_count: 998
• insert_date: 20150623
• index_terms:
  • ieee_terms:
    • Substrates
    • Standards
    • Modulation
    • Electric potential
    • CMOS integrated circuits
    • Prototypes
    • Imaging
  • author_terms:
    • CMOS image sensor (CIS)
    • time resolved
    • time-of-flight (TOF) imaging.
    • CMOS image sensor (CIS)
    • time resolved
    • time-of-flight (TOF) imaging
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Shutter Mechanism
    • Illumination
    • Lighting
    • Pulse Width
    • Pulsewidth Modulation
    • Time-resolved Imaging
    • TCAD Simulation
    • High Voltage
    • Higher Tendency
    • Electrostatic Potential
    • Electric Potential
    • Low Voltage
    • Quantum Efficiency
    • Strong Field
    • Open Voltage
    • Range Resolution
    • Saddle Point
    • Saddle-node
    • Potential Map
    • Neutral Density
    • Dark Current
    • P-n Junction
    • Fall Time
    • Neutral Density Filter
    • PIN Photodiode
    • Epitaxial Layer
    • Epilayer
    • Internal Quantum Efficiency
    • Time-of-flight Sensors
    • Time Of Flight Camera
    • Readout Noise
    • Device Simulation
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Optical Response
• authors:
  • Author Name: Erez Tadmor
    Affiliation: Advanced Imaging Technologies Group, Microsoft Research and Development Center, Haifa, Israel
    Author URL: https://ieeexplore.ieee.org/author/37085415977
    ID: 37085415977
    Order: 1
    Author Affiliations:
    • Advanced Imaging Technologies Group, Microsoft Research and Development Center, Haifa, Israel
    • Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
  • Author Name: Assaf Lahav
    Affiliation: Tower-Jazz Semiconductor Ltd., Migdal HaEmek, Israel
    Author URL: https://ieeexplore.ieee.org/author/37085746649
    ID: 37085746649
    Order: 2
    Author Affiliations:
    • Tower-Jazz Semiconductor Ltd., Migdal HaEmek, Israel
  • Author Name: Giora Yahav
    Affiliation: Advanced Imaging Technologies Group, Microsoft Research and Development Center, Haifa, Israel
    Author URL: https://ieeexplore.ieee.org/author/37293822600
    ID: 37293822600
    Order: 3
    Author Affiliations:
    • Advanced Imaging Technologies Group, Microsoft Research and Development Center, Haifa, Israel
  • Author Name: Alexander Fish
    Affiliation: Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
    Author URL: https://ieeexplore.ieee.org/author/37268457100
    ID: 37268457100
    Order: 4
    Author Affiliations:
    • Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel
  • Author Name: David Cohen
    Affiliation: Advanced Imaging Technologies Group, Microsoft Research and Development Center, Haifa, Israel
    Author URL: https://ieeexplore.ieee.org/author/37085425772
    ID: 37085425772
    Order: 5
    Author Affiliations:
    • Advanced Imaging Technologies Group, Microsoft Research and Development Center, Haifa, Israel

Image Sensor

• sensor_type: CMOS
• resolution: 360x180 pixels
• dynamic_range: 1:20
• pixel_size: 5.4 µm
• dark_current: 210 e−/s

Optical Data

• focal_length:
• aperture:
• field_of_view:
• distortion:

Performance Metrics

• frame_rate:
• signal_to_noise_ratio: 17 e−
• sensitivity:
• shutter_speed: 5 ns minimal tested shutter width
• power_consumption:
• noise: 17 e−

Applications & Benefits

• cell_imaging: Time-resolved imaging
• benefits: High contrast ratio and modulation frequency suitable for TOF and FLIM applications.

Supporting Organizations

• supported_by: Microsoft Research and Tower-Jazz Semiconductor Ltd.

Manuscript Details

• publication_date: Jan. 2016

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • power_consumption

Processed JSON Filename

request_1597dad8-6547-4f52-b587-4df86d15a824-a_fastgated_cmos_image_sensor_with_a_vertical_overflow_drain_shutter_mechanism.json