A Dualmode Polarization Image Sensor Design Based On Inpixel Dualband Metal Wire Grid For Trustworthy Sensing

• doi: 10.1109/JSEN.2022.3221758
• title: A Dual-Mode Polarization Image Sensor Design Based on In-Pixel Dual-Band Metal Wire Grid for Trustworthy Sensing
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 704
• access_type: LOCKED
• content_type: Journals
• abstract: In this article, we present the design of an on-chip polarization image sensor with a hardware root of trust (RoT) for trustworthy sensing provided by an interconnection metal-wire-grid (MWG) structure using a standard complementary-metal-oxide-semiconductor (CMOS) process. The proposed MWG structure features dual operation modes, which are polarization image sensing mode at the visible spectrum and physical unclonable function (PUF) mode at the near-infrared spectrum. By integrating the MWG on top of the photo-sensing pixel, the corresponding photocurrent is read out with a mainstream three-transistor-active-pixel-sensor (3T-APS). Moreover, prototype chips are fabricated using a 65-nm 1P8M CMOS process to validate the proposed design. For the polarization mode at 630 nm, the extinction ratio (ER) is measured to be 17 dB. For the PUF mode at 875 nm, the averaged unstable bits and bit error rate (BER) of 15 test chips are reported to be 3.5% and 0.29%, respectively. The responses generated in the PUF mode of the fabricated sensor chips also passed the widely adopted National Institute of Standards and Technology (NIST) and the autocorrelation function (ACF) randomness tests.
• article_number: 9954407
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954407
• html_url: https://ieeexplore.ieee.org/document/9954407/
• abstract_url: https://ieeexplore.ieee.org/document/9954407/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 9984967
• publication_year: 2022
• publication_date: 15 Dec.15, 2022
• start_page: 23844
• end_page: 23855
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 493
• insert_date: 20221117
• index_terms:
  • ieee_terms:
    • Sensors
    • Optical sensors
    • Optical imaging
    • Optical polarization
    • Optical device fabrication
    • Image sensors
    • Physical unclonable function
  • author_terms:
    • Metal wire grid (MWG)
    • optical physical unclonable function (PUF)
    • polarization image sensing
    • three-transistor active pixel sensor (3T-APS)
    • trustworthy sensing
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Polarization Imaging
    • Visible Light
    • Visible Region
    • Visible Spectrum
    • Visible-light
    • Operation Mode
    • Near-infrared Spectroscopy
    • Near-infrared Spectra
    • Photocurrent
    • Autocorrelation Function
    • Bit Error Rate
    • Bit-error-rate
    • Bit Error Ratio
    • Bit Error
    • Dual Mode
    • Extinction Ratio
    • Physical Unclonable Functions
    • Simulation Results
    • Photodiode
    • Internet Of Things
    • Internet-of-Things
    • Linearly Polarized
    • Propagation Direction
    • Standard Process
    • Supply Voltage
    • Sensor Array
    • Finite-difference Time-domain
    • FDTD
    • Finite-difference Time-domain Method
    • Finite Difference Time Domain
    • Static Random Access Memory
    • Static Random-access Memory
    • Raw Responses
    • Resistive Random Access Memory
    • Resistive Random-access Memory
    • RRAM
    • Resistive RAM
    • ReRAM
    • Underwater Image
    • Optimal Wavelength
    • Optimal Wavelengths
    • Entropy Source
    • Effective Medium Theory
    • Effective Medium Approximation
    • Effective Medium Model
    • Maxwell-Garnett
    • Pixel Array
    • Reference Condition
    • Signature Generation
• authors:
  • Author Name: Hongxia Zheng
    Affiliation: College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37085665343
    ID: 37085665343
    Order: 1
    Author Affiliations:
    • College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
  • Author Name: Haibiao Zuo
    Affiliation: College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37089495530
    ID: 37089495530
    Order: 2
    Author Affiliations:
    • College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
  • Author Name: Xiaojin Zhao
    Affiliation: College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/38550947700
    ID: 38550947700
    Order: 3
    Author Affiliations:
    • College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
  • Author Name: Yatao Yang
    Affiliation: College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37088451153
    ID: 37088451153
    Order: 4
    Author Affiliations:
    • College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
  • Author Name: Chip-Hong Chang
    Affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37276902700
    ID: 37276902700
    Order: 5
    Author Affiliations:
    • School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore

Image Sensor

• sensor_type: CMOS
• resolution: 16x16 pixels (for prototype)
• dynamic_range: Not explicitly mentioned
• pixel_size: 20x20 µm (for prototype)
• dark_current: Not explicitly mentioned

Optical Data

• focal_length: Not mentioned
• aperture: Not mentioned
• field_of_view: Not mentioned
• distortion: Not mentioned

Performance Metrics

• frame_rate: Not mentioned
• signal_to_noise_ratio: Not explicitly provided
• sensitivity: Not explicitly mentioned
• shutter_speed: Not explicitly mentioned
• power_consumption: Not explicitly mentioned
• noise: Includes sources such as temporal noise and fixed-pattern noise

Applications & Benefits

• cell_imaging: Applications in polarization imaging, sensor authentication, and secure imaging
• benefits: Enables trustworthy sensing and captures polarized light information.

Supporting Organizations

• supported_by: Supported by various organizations, including the National Natural Science Foundation of China and the Shenzhen–Hong Kong Joint Innovation Foundation.

Manuscript Details

• publication_date: 15 Dec.15, 2022

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • sensitivity
  • shutter_speed
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • power_consumption

Processed JSON Filename

request_56f5ee84-e3d9-4108-bf3f-48f4e274dc5f-a_dualmode_polarization_image_sensor_design_based_on_inpixel_dualband_metal_wire_grid_for_trustworthy_sensing.json