A Dualchannel Readout Lownoise Cmos Image Sensor Based On Skipper Technology

• doi: 10.1109/JSEN.2024.3507922
• title: A Dual-Channel Readout Low-Noise CMOS Image Sensor Based on Skipper Technology
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 697
• access_type: LOCKED
• content_type: Journals
• abstract: With the development of semiconductor fabrication technology, in the 180 nm CMOS image sensor (CIS) process, the gap between two gates has been reduced to $0.25~\mu $ m. Under this background, charge transfer between gates is realized, like the process in charge-coupled devices (CCDs). In recent literature, skipper technology has been utilized to improve the noise performance of CIS as it was previously applied in CCDs. In this article, a dual-channel readout low-noise CIS based on skipper technology is proposed. Theoretical analysis is introduced to verify the advantages of skipper multiple sampling (SMS), compared with correlated multiple sampling (CMS). Technology computer-aided design (TCAD) simulations were conducted to clarify the relationship between gate voltage level and the charge accommodation capacity and investigate the charge transfer efficiency (CTE) of the proposed pixel. An optimized pipeline readout chain is introduced to eliminate correlated noise and a post-simulation is implemented to study the readout circuit. According to the simulation results, the CTE improvement in the proposed skipper pixel is proved. By means of circuit-level simulations, the linearity of programmable gain amplifier (PGA) and the input-referred noise (IRN) at different gains were obtained. Compared with the conventional skipper structure, the pixel architecture proposed in this article realizes the same noise level with half the number of charge transfers, which mitigates the effect of CTE and improves the frame rate.
• article_number: 10785552
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10785552
• html_url: https://ieeexplore.ieee.org/document/10785552/
• abstract_url: https://ieeexplore.ieee.org/document/10785552/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 10839433
• publication_year: 2025
• publication_date: 15 Jan.15, 2025
• start_page: 2830
• end_page: 2838
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 238
• insert_date: 20241209
• index_terms:
  • ieee_terms:
    • Sensors
    • Noise reduction
    • Logic gates
    • Charge transfer
    • Prototypes
    • Electric potential
    • Capacitors
    • 1/f noise
    • Simulation
    • Layout
  • author_terms:
    • Charge transfer efficiency (CTE)
    • CMOS image sensor (CIS)
    • skipper technology
    • technology computer-aided design (TCAD) simulation
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • CCD Camera
    • Charge-coupled Device
    • Theoretical Analysis
    • Voltage Levels
    • Efficient Charge Transfer
    • Readout Circuit
    • Input-referred Noise
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Denoising
    • Noise Reduction
    • Total Charge
    • Z-transformation
    • Z-domain
    • Transfer Time
    • Single-photon Detectors
    • Photon-counting Detector
    • polySia
    • Polycrystalline Silicon
    • Polysilicon
    • Video Signal
    • Readout Noise
    • Static Random Access Memory
    • PIN Photodiode
• authors:
  • Author Name: Yang Qu
    Affiliation: School of Integrated Circuits, Dalian University of Technology, Dalian, China
    Author URL: https://ieeexplore.ieee.org/author/37088220367
    ID: 37088220367
    Order: 1
    Author Affiliations:
    • School of Integrated Circuits, Dalian University of Technology, Dalian, China
  • Author Name: Qing Zang
    Affiliation: Institute of System Engineering, Academy of Military Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37089520110
    ID: 37089520110
    Order: 2
    Author Affiliations:
    • Institute of System Engineering, Academy of Military Sciences, Beijing, China
  • Author Name: Zehao Li
    Affiliation: School of Integrated Circuits, Dalian University of Technology, Dalian, China
    Author URL: https://ieeexplore.ieee.org/author/37086862367
    ID: 37086862367
    Order: 3
    Author Affiliations:
    • School of Integrated Circuits, Dalian University of Technology, Dalian, China
  • Author Name: Qian Jiang
    Affiliation: School of Integrated Circuits, Dalian University of Technology, Dalian, China
    Author URL: https://ieeexplore.ieee.org/author/474016823909040
    ID: 474016823909040
    Order: 4
    Author Affiliations:
    • School of Integrated Circuits, Dalian University of Technology, Dalian, China
  • Author Name: Yang Liu
    Affiliation: Institute of System Engineering, Academy of Military Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37089546075
    ID: 37089546075
    Order: 5
    Author Affiliations:
    • Institute of System Engineering, Academy of Military Sciences, Beijing, China
  • Author Name: Hongwei Liang
    Affiliation: School of Integrated Circuits, Dalian University of Technology, Dalian, China
    Author URL: https://ieeexplore.ieee.org/author/37088357714
    ID: 37088357714
    Order: 6
    Author Affiliations:
    • School of Integrated Circuits, Dalian University of Technology, Dalian, China
  • Author Name: Yuchun Chang
    Affiliation: School of Integrated Circuits, Dalian University of Technology, Dalian, China
    Author URL: https://ieeexplore.ieee.org/author/37405389100
    ID: 37405389100
    Order: 7
    Author Affiliations:
    • School of Integrated Circuits, Dalian University of Technology, Dalian, China

Image Sensor

• sensor_type: CMOS
• resolution: 128x128 pixels
• dynamic_range: 90 dB
• pixel_size: 10 µm
• dark_current: information not specified

Optical Data

• focal_length: information not specified
• aperture: information not specified
• field_of_view: information not specified
• distortion: information not specified

Performance Metrics

• frame_rate: information not specified
• signal_to_noise_ratio: 23.35 µV (IRN at gain x16)
• sensitivity: information not specified
• shutter_speed: information not specified
• power_consumption: information not specified
• noise: less than 0.6 e−

Applications & Benefits

• cell_imaging: Used in medical devices and single-photon detection applications.
• benefits: Reduces charge transfer inefficiencies (CTE), improves frame rate, allows for low-noise imaging in low light conditions.

Supporting Organizations

• supported_by: National Natural Science Foundation of China

Manuscript Details

• publication_date: 15 Jan.15, 2025

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_392027b1-580b-448b-838d-e42872193275-a_dualchannel_readout_lownoise_cmos_image_sensor_based_on_skipper_technology.json