A Digital Monolithic Active Pixel Sensor Chip In A Quadruplewell Cis
Process For Tracking Applications
- doi: 10.1109/TNS.2013.2280794
-
title: A Digital Monolithic Active Pixel Sensor Chip in
a Quadruple-Well CIS Process for Tracking Applications
- publisher: IEEE
- isbn:
- issn: 1558-1578
- rank: 691
- access_type: LOCKED
- content_type: Journals
-
abstract: A CMOS sensor chip for charged particle
detection has been developed and submitted for fabrication in a 0.18 μm
Quadruple-Well (N&P-Wells, Deep N&P-Wells) CMOS Image Sensor (CIS)
process. Improvement of the radiation hardness, the power dissipation
and the readout speed of the mainstream CMOS sensors is expected with
the exploration of this process. In order to ensure better charge
collection and neutron tolerance, wafers with high-resistivity epitaxial
layer have been chosen. In this paper a digital CMOS sensor prototype
developed in order to validate the key analog blocks (from sensing
element to 1-bit digital conversion) of a binary Monolithic Active Pixel
Sensor (MAPS) in this process will be presented. The digital sensor
prototype comprises four different sub-arrays of 20 μm pitch 64 × 32
pixels, 128 column-level auto-zeroed discriminators, a sequencer and an
output digital multiplexer. Laboratory tests results including the
charge-to-voltage conversion factor, the charge collection efficiency,
the temporal noise and the fixed-pattern noise are presented in details.
Some irradiation results will also be given.
- article_number: 6616655
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6616655
-
html_url:
https://ieeexplore.ieee.org/document/6616655/
-
abstract_url:
https://ieeexplore.ieee.org/document/6616655/
-
publication_title: IEEE Transactions on Nuclear Science
- conference_location:
- conference_dates:
- publication_number: 23
- is_number: 6626362
- publication_year: 2013
- publication_date: Oct. 2013
- start_page: 3899
- end_page: 3906
- citing_paper_count: 9
- citing_patent_count: 0
- download_count: 421
- insert_date: 20131001
-
index_terms:
-
ieee_terms:
- Noise
- Latches
- CMOS integrated circuits
- MOSFET
- Switches
- Power dissipation
- Capacitors
-
author_terms:
- Active pixel sensors
- CMOS image sensors
- CMOS integrated circuits
- position sensitive particle detectors
-
dynamic_index_terms:
- Digital Sensor
- Digital Chip
- Active Pixel Sensor
- CMOS Image Sensor Process
- Charged Particles
- Image Sensor
- Camera Sensor
- Charge Collection
- Epitaxial Layer
- Epilayer
- Key Block
- Radiation Tolerance
- Radiation Hardness
- Charge Collection Efficiency
- Temporal Noise
- Feedback Loop
- Dynamic Range
- Circuitry
- White Noise
- Deeper Layers
- Tracking System
- Tracking Devices
- Voltage Drop
- Potential Drop
- IR Drop
- Threshold Voltage
- Gain Stage
- Large Sensor
- Rolling Shutter
- DC Gain
- Non-ionizing
- Non-ionizing Radiation
- Test Vehicle
- CMOS Process
- Physical Experiments
-
authors:
-
Author Name: Y. Değerli
Affiliation: IRFU, SEDI, CEA Saclay, France
Author URL:
https://ieeexplore.ieee.org/author/38348452900
ID: 38348452900
Order: 1
Author Affiliations:
- IRFU, SEDI, CEA Saclay, France
-
Author Name: G. Bertolone
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37398343400
ID: 37398343400
Order: 2
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: G. Claus
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37277293000
ID: 37277293000
Order: 3
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: A. Dorokhov
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37268868500
ID: 37268868500
Order: 4
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: W. Dulinski
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37277323400
ID: 37277323400
Order: 5
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: M. Goffe
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37398000700
ID: 37398000700
Order: 6
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: F. Guilloux
Affiliation: IRFU, SEDI, CEA Saclay, France
Author URL:
https://ieeexplore.ieee.org/author/37398000600
ID: 37398000600
Order: 7
Author Affiliations:
- IRFU, SEDI, CEA Saclay, France
-
Author Name: Ch. Hu-Guo
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/38271523900
ID: 38271523900
Order: 8
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: K. Jaaskelainen
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37390969000
ID: 37390969000
Order: 9
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: F. Morel
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37407726900
ID: 37407726900
Order: 10
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: F. Orsini
Affiliation: IRFU, SEDI, CEA Saclay, France
Author URL:
https://ieeexplore.ieee.org/author/37268540800
ID: 37268540800
Order: 11
Author Affiliations:
- IRFU, SEDI, CEA Saclay, France
-
Author Name: M. Specht
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/38277703000
ID: 38277703000
Order: 12
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
-
Author Name: M. Winter
Affiliation: IPHC, IN2P3, ULP, Strasbourg,
France
Author URL:
https://ieeexplore.ieee.org/author/37277330700
ID: 37277330700
Order: 13
Author Affiliations:
- IPHC, IN2P3, ULP, Strasbourg, France
Image Sensor
- sensor_type: CMOS Image Sensor
- resolution: 20 m pitch 64x32 pixels
- dynamic_range: limited in the new process
- pixel_size: 20 µm
- dark_current: not specified in the document
Optical Data
- focal_length: not specified in the document
- aperture: not specified in the document
- field_of_view: not specified in the document
- distortion: not specified in the document
Performance Metrics
-
frame_rate: not directly specified, but mentions 200
ns/frame timing
- signal_to_noise_ratio: better than 20
- sensitivity: not specified in the document
- shutter_speed: not specified in the document
- power_consumption: about 100 µW/pixel
-
noise: input referred r.m.s. temporal noise 28 e-
(@200ns/frame, 20 °C)
Applications & Benefits
-
cell_imaging: not specified but suitable for charged
particle detection and tracking applications
-
benefits: Improved radiation hardness, reduced power
dissipation, continuous auto-zeroing for better matching and noise
suppression.
Supporting Organizations
-
supported_by: CEA Saclay, IRFU/SEDI, IPHC, IN2P3/ULP,
Tower-Jazz
Manuscript Details
- publication_date: Oct. 2013
Relevancy Score
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