A Cryogenic Readout Integrated Circuit With Analog Pileup And Inpixel Adc For High Frame Rate Skipper Ccdincmos Sensors

• doi: 10.1109/NSS/MIC/RTSD57108.2024.10655472
• title: A Cryogenic readout integrated circuit with analog pile-up and in-Pixel ADC for high frame rate Skipper CCD-in-CMOS Sensors
• publisher: IEEE
• isbn: 979-8-3503-8816-9
• issn: 1082-3654
• rank: 682
• access_type: LOCKED
• content_type: Conferences
• abstract: The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60um x 60um footprint. SPROCKET2 is intended to be heterogeneously integrated with a pixelated Skipper CCD-in-CMOS sensor, such that one readout pixel is connected to a multiplexed array of 16 active image sensor pixels, to match their spatial geometry. Our design benefits from the Skipper CCD-in-CMOS sensor’s non-destructive readout capability to achieve exceptionally low noise through multi-sampling and averaging while optimizing for total power consumption. The pixel readout utilizes correlated double sampling to minimize 1/f noise and includes “pile-up” of ten successive samples in the analog domain before digitizing at a rate of 66.7 ksps. Measurement results of in-pixel serial SAR ADC show DNL and INL of $\sim 0.44$ LSB and 0.58 LBS respectively. A large area array of 20,000 SPROCKET2 ADC pixels (multiplexed 1:16 to 320,000 sensor pixels) is currently under test. By reading out data over a 10 Gbps optical link, this pixel design enables a frame rate of $\sim 4 \mathrm{kfps}$ for large sensing areas with minimal sensing deadtime. In the highest gain mode, the pixelated ADC has an input-referred resolution of 10 uV with a simulated power consumption of 50 uW. The pixel operates with constant current draw to minimize power-rail crosstalk.
• article_number: 10655472
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10655472
• html_url: https://ieeexplore.ieee.org/document/10655472/
• abstract_url: https://ieeexplore.ieee.org/document/10655472/
• publication_title: 2024 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD)
• conference_location: Tampa, FL, USA
• conference_dates: 26 Oct.-2 Nov. 2024
• publication_number: 10654796
• is_number: 10654808
• publication_year: 2024
• publication_date: 26 Oct.-2 Nov. 2024
• start_page: 1
• end_page: 2
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 42
• insert_date: 20240925
• index_terms:
  • ieee_terms:
    • Multiplexing
    • Image sensors
    • Image quality
    • Temperature sensors
    • Semiconductor device measurement
    • Power demand
    • Semiconductor detectors
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 979-8-3503-8816-9, isbnType: New-2005
  • format: Electronic ISBN, value: 979-8-3503-8815-2, isbnType: New-2005
• authors:
  • Author Name: A. Quinn
    Affiliation: Fermi National Accelerator Laboratory, Microelectronics Division, Batavia, Illinois, United States of America
    Author URL: https://ieeexplore.ieee.org/author/827480658342564
    ID: 827480658342564
    Order: 1
    Author Affiliations:
    • Fermi National Accelerator Laboratory, Microelectronics Division, Batavia, Illinois, United States of America
  • Author Name: F. Fahim
    Affiliation: Fermi National Accelerator Laboratory, Microelectronics Division, Batavia, Illinois, United States of America
    Author URL: https://ieeexplore.ieee.org/author/680366260982829
    ID: 680366260982829
    Order: 2
    Author Affiliations:
    • Fermi National Accelerator Laboratory, Microelectronics Division, Batavia, Illinois, United States of America
  • Author Name: D. Braga
    Affiliation: Fermi National Accelerator Laboratory, Microelectronics Division, Batavia, Illinois, United States of America
    Author URL: https://ieeexplore.ieee.org/author/342868841490091
    ID: 342868841490091
    Order: 3
    Author Affiliations:
    • Fermi National Accelerator Laboratory, Microelectronics Division, Batavia, Illinois, United States of America

Image Sensor

• sensor_type: CMOS
• resolution: 320,000 pixels (multiplexed)
• dynamic_range: Not specified
• pixel_size: 60µm x 60µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: ~4000 fps
• power_consumption: 50uW
• noise: ~0.44 LSB (DNL) and 0.58 LSB (INL)

Applications & Benefits

• cell_imaging: Not specified
• benefits: Enables high frame rate readout of Skipper CCD-in-CMOS image sensors with low noise.

Supporting Organizations

• supported_by: Fermi Research Alliance, LLC, U.S. Department of Energy

Manuscript Details

• publication_date: 26 Oct.-2 Nov. 2024

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • cell_imaging
  • manuscript_details.publication_date

Processed JSON Filename

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