A Cmos Log Image Sensor With Onchip Fpn Compensation

• doi:
• title: A CMOS log image sensor with on-chip FPN compensation
• publisher: IEEE
• isbn:
• issn:
• rank: 633
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper describes a logarithmic image sensor in CMOS technology by using photodiode in photovoltaic mode. Thanks to this pixel design, an electronic dark image reference can be obtained for each pixel readout and a fixed pattern noise (FPN) compensation can be easily done by on-chip analog circuits. A 160×120-pixel prototype circuit in a standard 0.8µn DPDM CMOS technology will be described. This prototype chip has demonstrated low FPN, high dynamic range and high sensitivity at low light condition (<1lux).
• article_number: 1471344
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1471344
• html_url: https://ieeexplore.ieee.org/document/1471344/
• abstract_url: https://ieeexplore.ieee.org/document/1471344/
• publication_title: Proceedings of the 27th European Solid-State Circuits Conference
• conference_location: Villach, Austria
• conference_dates: 18-20 Sept. 2001
• publication_number: 9920
• is_number: 31529
• publication_year: 2001
• publication_date: 18-20 Sept. 2001
• start_page: 101
• end_page: 104
• citing_paper_count: 6
• citing_patent_count: 4
• download_count: 565
• insert_date: 20050801
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Image sensors
    • CMOS technology
    • Pixel
    • Prototypes
    • Photodiodes
    • Photovoltaic systems
    • Solar power generation
    • Circuit noise
    • Analog circuits
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Fixed Pattern Noise
    • Photodiode
    • Low Light Conditions
    • High Dynamic Range
    • CMOS Technology
    • Output Feature
    • Output Characteristics
    • Open-circuit Voltage
    • Circuit Design
    • Pixel Array
    • Output Pixel
    • Switching Noise
    • Logarithmic Conversion
    • Log Conversion
• authors:
  • Author Name: Yang Ni
    Affiliation: Department Electronique et Physique, Institut National des Telecommunications, France
    Author URL: https://ieeexplore.ieee.org/author/37087354104
    ID: 37087354104
    Order: 1
    Author Affiliations:
    • Department Electronique et Physique, Institut National des Telecommunications, France
  • Author Name: K. Matou
    Affiliation: Department Electronique et Physique, Institut National des Telecommunications, France
    Author URL: https://ieeexplore.ieee.org/author/37088129942
    ID: 37088129942
    Order: 2
    Author Affiliations:
    • Department Electronique et Physique, Institut National des Telecommunications, France

Image Sensor

• sensor_type: CMOS
• resolution: 160x120
• dynamic_range: > 6 decades
• pixel_size: 30um x 30um
• dark_current: not specified (but has been minimized)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 500-700 kHz
• sensitivity: high sensitivity at low light conditions (<1 lux)
• power_consumption: 15mA at 5V
• noise: Fixed Pattern Noise of 6.5mV overall; 2.5mV after compensation

Applications & Benefits

• cell_imaging: not specified
• benefits: High dynamic range, high sensitivity, effective FPN compensation

Supporting Organizations

• supported_by: AMS, CMP service in France

Manuscript Details

• publication_date: 18-20 Sept. 2001

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • shutter_speed

Processed JSON Filename

request_18de53d0-9fa6-41c7-9e57-3030fba104d9-a_cmos_log_image_sensor_with_onchip_fpn_compensation.json