A Cmos Image Sensor Pixel Combining Deep Subelectron Noise With Wide Dynamic Range

• doi: 10.1109/LED.2020.2988378
• title: A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range
• publisher: IEEE
• isbn:
• issn: 1558-0563
• rank: 543
• access_type: CCBY - IEEE is not the copyright holder of this material. Please follow the instructions via https://creativecommons.org/licenses/by/4.0/ to obtain full-text articles and stipulations in the API documentation.
• content_type: Journals
• abstract: This letter introduces a 5-transistors (5T) implementation of CMOS Image Sensors (CIS) pixels enabling the combination of deep sub-electron noise performance with wide dynamic range (DR). The 5T pixel presents a new technique to reduce the sense node capacitance without any process refinements or voltage level increase and features adjustable conversion gain (CG) to enable wide dynamic imaging. The implementation of the proposed 5T pixel in a standard 180nm CIS process demonstrates the combination of a measured high CG of 250 μV/e and low CG of 115μV/e with a saturation level of about 6500e offering photo-electron counting capabilitywithout compromising the DR and readout speed.
• article_number: 9069204
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9069204
• html_url: https://ieeexplore.ieee.org/document/9069204/
• abstract_url: https://ieeexplore.ieee.org/document/9069204/
• publication_title: IEEE Electron Device Letters
• conference_location:
• conference_dates:
• publication_number: 55
• is_number: 9098112
• publication_year: 2020
• publication_date: June 2020
• start_page: 880
• end_page: 883
• citing_paper_count: 15
• citing_patent_count: 0
• download_count: 3598
• insert_date: 20200416
• index_terms:
  • ieee_terms:
    • Capacitance
    • Logic gates
    • Charge transfer
    • Standards
    • Transistors
    • Light emitting diodes
    • Current measurement
  • author_terms:
    • CMOS
    • 4T
    • 5T
    • CIS
    • conversion gain
    • sub-electron noise
    • wide dynamic
  • dynamic_index_terms:
    • Noise Performance
    • Conversion Gain
    • Gain Adjustment
    • Low Noise
    • Shot Noise
    • Poisson Noise
    • Shot-noise
    • Gate Capacitance
    • Saturation Regime
    • Pixel Noise
    • Additional Gate
    • Readout Noise
    • Reset Voltage
• authors:
  • Author Name: Assim Boukhayma
    Affiliation: ICLAB, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37085418249
    ID: 37085418249
    Order: 1
    Author Affiliations:
    • ICLAB, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland
  • Author Name: Antonino Caizzone
    Affiliation: ICLAB, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37086171917
    ID: 37086171917
    Order: 2
    Author Affiliations:
    • ICLAB, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland
  • Author Name: Christian Enz
    Affiliation: ICLAB, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37269686200
    ID: 37269686200
    Order: 3
    Author Affiliations:
    • ICLAB, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: 240x80 pixels
• dynamic_range: High, specific dB value not provided
• pixel_size: 10 µm
• dark_current: Not explicitly provided in the text (details needed)

Optical Data

• focal_length: Not provided (details needed)
• aperture: Not provided (details needed)
• field_of_view: Not provided (details needed)
• distortion: Not provided (details needed)

Performance Metrics

• frame_rate: Not provided (details needed)
• signal_to_noise_ratio: Not explicitly provided; read noise at 0.32 e- RMS reported
• sensitivity: Not provided (details needed)
• shutter_speed: Not provided (details needed)
• power_consumption: Not explicitly provided (details needed)
• noise: 0.32 e- RMS

Applications & Benefits

• cell_imaging: Photo-electron counting capability without compromising dynamic range or readout speed.
• benefits: Combination of deep sub-electron noise performance with wide dynamic range. High conversion gain enables enhanced low light performance.

Supporting Organizations

• supported_by: Not provided (details needed)

Manuscript Details

• publication_date: June 2020

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption
  • supported_by

Processed JSON Filename

request_a162ef5b-e9e1-45ab-8ad8-6a2112343de7-a_cmos_image_sensor_pixel_combining_deep_subelectron_noise_with_wide_dynamic_range.json